Abnormal Bias Instabilities Induced by Lateral H2O Diffusion Into Top-Gate Insulator of a-InGaZnO Thin-Film Transistors

The environmental stability of self-aligned top-gate (SATG) a-InGaZnO thin-film transistor (TFT) was studied by performing the high-temperature high-humidity (HTHH) test. Despite the maintenance of initial electrical characteristics, the stability under positive bias stress (PBS) was considerably de...

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Veröffentlicht in:	IEEE journal of the Electron Devices Society 2022, Vol.10, p.341-345
Hauptverfasser:	Li, Jiye, Peng, Hao, Yang, Huan, Zhou, Xiaoliang, Lu, Lei, Zhang, Shengdong
Format:	Artikel
Sprache:	eng
Schlagworte:	A-InGaZnO Bias Degradation environmental stability H2O High temperature hydrogen Indium gallium zinc oxide Logic gates NIST Photoelectrons positive bias stress (PBS) Self alignment self-aligned top-gate (SATG) Semiconductor devices Semiconductor process modeling Stability Stress Substrates Thin film transistors thin-film transistors (TFTs) Water chemistry
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