6 kV/3.4 mΩ·cm2 Vertical β-Ga2O3 Schottky Barrier Diode With BV2/Ron,sp Performance Exceeding 1-D Unipolar Limit of GaN and SiC

In this work, we show that the \beta -Ga 2 O 3 Schottky Barrier Diode (SBD) can perform beyond the 1-D unipolar limit of the SiC and GaN by employing a deep trench with filled thick SiO 2 layer structure to enhance the breakdown voltage (BV). By doing so, BV and specific on- resistance ( \text{R}_{...

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