Observation of local vibrational modes in N-doped 6H-SiC
Doping plays a vital role in tuning the carrier concentration and also influences various electronic properties in semiconductors. In addition to tuning the electronic properties of semiconductors, impurities also affect vibrational properties. We report the local vibrational modes (LVMs) in N-doped...
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| Veröffentlicht in: | Indian journal of physics 2022-05, Vol.96 (6), p.1691-1697 |
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| container_title | Indian journal of physics |
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| creator | Patankar, M. K. Parida, Santanu Chandra, Sharat Srihari, V. Kasinathan, M. Behera, R. P. Jayanthi, T. Dhara, Sandip |
| description | Doping plays a vital role in tuning the carrier concentration and also influences various electronic properties in semiconductors. In addition to tuning the electronic properties of semiconductors, impurities also affect vibrational properties. We report the local vibrational modes (LVMs) in N-doped
n
-type 6H-SiC. New phonon modes are observed in the low-temperature range. Unlike lattice phonons, LVMs are localized in both the real space and frequency domains and give rise to a distinct signature in the Raman spectra. In the present study, LVMs in N-doped 6H-SiC are identified as N atom vibrations with the help of lattice dynamical calculations of the phonon density of states using generalized gradient approximation. Moreover, the stability of the SiC is investigated for a wide temperature range signifying its application in micro-electro-mechanical systems technology. Therefore, the present study provides insight for understanding both lattice phonons and the impurity-induced vibrational modes using Raman spectroscopic analysis in corroboration with the calculation of phonon density of states. |
| doi_str_mv | 10.1007/s12648-021-02101-5 |
| format | Article |
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n
-type 6H-SiC. New phonon modes are observed in the low-temperature range. Unlike lattice phonons, LVMs are localized in both the real space and frequency domains and give rise to a distinct signature in the Raman spectra. In the present study, LVMs in N-doped 6H-SiC are identified as N atom vibrations with the help of lattice dynamical calculations of the phonon density of states using generalized gradient approximation. Moreover, the stability of the SiC is investigated for a wide temperature range signifying its application in micro-electro-mechanical systems technology. Therefore, the present study provides insight for understanding both lattice phonons and the impurity-induced vibrational modes using Raman spectroscopic analysis in corroboration with the calculation of phonon density of states.</description><identifier>ISSN: 0973-1458</identifier><identifier>EISSN: 0974-9845</identifier><identifier>DOI: 10.1007/s12648-021-02101-5</identifier><language>eng</language><publisher>New Delhi: Springer India</publisher><subject>Astrophysics and Astroparticles ; Carrier density ; Density of states ; Impurities ; Lattice vibration ; Low temperature ; Mathematical analysis ; Microelectromechanical systems ; Original Paper ; Phonons ; Physics ; Physics and Astronomy ; Raman spectra ; Semiconductors ; Tuning ; Vibration mode</subject><ispartof>Indian journal of physics, 2022-05, Vol.96 (6), p.1691-1697</ispartof><rights>Indian Association for the Cultivation of Science 2021</rights><rights>Indian Association for the Cultivation of Science 2021.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c200t-7ae82a4f3ec53645f2be1760381ee30fb561e10f0d0fe6a770eca0b3707a9fb73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s12648-021-02101-5$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s12648-021-02101-5$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,778,782,27911,27912,41475,42544,51306</link.rule.ids></links><search><creatorcontrib>Patankar, M. K.</creatorcontrib><creatorcontrib>Parida, Santanu</creatorcontrib><creatorcontrib>Chandra, Sharat</creatorcontrib><creatorcontrib>Srihari, V.</creatorcontrib><creatorcontrib>Kasinathan, M.</creatorcontrib><creatorcontrib>Behera, R. P.</creatorcontrib><creatorcontrib>Jayanthi, T.</creatorcontrib><creatorcontrib>Dhara, Sandip</creatorcontrib><title>Observation of local vibrational modes in N-doped 6H-SiC</title><title>Indian journal of physics</title><addtitle>Indian J Phys</addtitle><description>Doping plays a vital role in tuning the carrier concentration and also influences various electronic properties in semiconductors. In addition to tuning the electronic properties of semiconductors, impurities also affect vibrational properties. We report the local vibrational modes (LVMs) in N-doped
n
-type 6H-SiC. New phonon modes are observed in the low-temperature range. Unlike lattice phonons, LVMs are localized in both the real space and frequency domains and give rise to a distinct signature in the Raman spectra. In the present study, LVMs in N-doped 6H-SiC are identified as N atom vibrations with the help of lattice dynamical calculations of the phonon density of states using generalized gradient approximation. Moreover, the stability of the SiC is investigated for a wide temperature range signifying its application in micro-electro-mechanical systems technology. Therefore, the present study provides insight for understanding both lattice phonons and the impurity-induced vibrational modes using Raman spectroscopic analysis in corroboration with the calculation of phonon density of states.</description><subject>Astrophysics and Astroparticles</subject><subject>Carrier density</subject><subject>Density of states</subject><subject>Impurities</subject><subject>Lattice vibration</subject><subject>Low temperature</subject><subject>Mathematical analysis</subject><subject>Microelectromechanical systems</subject><subject>Original Paper</subject><subject>Phonons</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Raman spectra</subject><subject>Semiconductors</subject><subject>Tuning</subject><subject>Vibration mode</subject><issn>0973-1458</issn><issn>0974-9845</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp9kE9LAzEQxYMoWKtfwNOC5-hMsvmzRylqC8Ue1HPI7k5kS9vUpC347d12BW8ehnkM7z2GH2O3CPcIYB4yCl1aDgKPA8jVGRtBZUpe2VKdn7TkWCp7ya5yXgLoCo0aMbuoM6WD33VxU8RQrGLjV8Whq9Pp1Ot1bCkX3aZ45W3cUlvoKX_rJtfsIvhVppvfPWYfz0_vkymfL15mk8c5bwTAjhtPVvgySGqU1KUKoiY0GqRFIgmhVhoJIUALgbQ3BqjxUEsDxlehNnLM7obebYpfe8o7t4z71D-WndBKoVRWYu8Sg6tJMedEwW1Tt_bp2yG4IyE3EHI9HXci5FQfkkMo9-bNJ6W_6n9SP_GAZxc</recordid><startdate>20220501</startdate><enddate>20220501</enddate><creator>Patankar, M. 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K.</creatorcontrib><creatorcontrib>Parida, Santanu</creatorcontrib><creatorcontrib>Chandra, Sharat</creatorcontrib><creatorcontrib>Srihari, V.</creatorcontrib><creatorcontrib>Kasinathan, M.</creatorcontrib><creatorcontrib>Behera, R. P.</creatorcontrib><creatorcontrib>Jayanthi, T.</creatorcontrib><creatorcontrib>Dhara, Sandip</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Indian journal of physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Patankar, M. K.</au><au>Parida, Santanu</au><au>Chandra, Sharat</au><au>Srihari, V.</au><au>Kasinathan, M.</au><au>Behera, R. P.</au><au>Jayanthi, T.</au><au>Dhara, Sandip</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Observation of local vibrational modes in N-doped 6H-SiC</atitle><jtitle>Indian journal of physics</jtitle><stitle>Indian J Phys</stitle><date>2022-05-01</date><risdate>2022</risdate><volume>96</volume><issue>6</issue><spage>1691</spage><epage>1697</epage><pages>1691-1697</pages><issn>0973-1458</issn><eissn>0974-9845</eissn><abstract>Doping plays a vital role in tuning the carrier concentration and also influences various electronic properties in semiconductors. In addition to tuning the electronic properties of semiconductors, impurities also affect vibrational properties. We report the local vibrational modes (LVMs) in N-doped
n
-type 6H-SiC. New phonon modes are observed in the low-temperature range. Unlike lattice phonons, LVMs are localized in both the real space and frequency domains and give rise to a distinct signature in the Raman spectra. In the present study, LVMs in N-doped 6H-SiC are identified as N atom vibrations with the help of lattice dynamical calculations of the phonon density of states using generalized gradient approximation. Moreover, the stability of the SiC is investigated for a wide temperature range signifying its application in micro-electro-mechanical systems technology. Therefore, the present study provides insight for understanding both lattice phonons and the impurity-induced vibrational modes using Raman spectroscopic analysis in corroboration with the calculation of phonon density of states.</abstract><cop>New Delhi</cop><pub>Springer India</pub><doi>10.1007/s12648-021-02101-5</doi><tpages>7</tpages></addata></record> |
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| subjects | Astrophysics and Astroparticles Carrier density Density of states Impurities Lattice vibration Low temperature Mathematical analysis Microelectromechanical systems Original Paper Phonons Physics Physics and Astronomy Raman spectra Semiconductors Tuning Vibration mode |
| title | Observation of local vibrational modes in N-doped 6H-SiC |
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