Waveguiding Regime Control by Varying the Refractive Index for MgZnO Sprayed Thin Films
In this work, ZnO and MgZnO thin films were deposited onto glass substrates by spray pyrolysis processes. The structural, optical, electrical, and waveguiding properties of the films were studied over Mg doping levels ranging from 0 to 30 at %. With an increase of Mg concentration up to 20 at %, XRD...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2021-12, Vol.55 (Suppl 1), p.S72-S79 |
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| creator | Bouachiba, Y. Taabouche, A. Bouabellou, A. Zemieche, A. M. Ghellil, N. Serrar, H. Aouati, R. Djaaboube, H. Hanini, F. Boukentoucha, C. |
| description | In this work, ZnO and MgZnO thin films were deposited onto glass substrates by spray pyrolysis processes. The structural, optical, electrical, and waveguiding properties of the films were studied over Mg doping levels ranging from 0 to 30 at %. With an increase of Mg concentration up to 20 at %, XRD investigation reveals that the films crystallize in single ZnO wurtzite structure with a preferential
c
-axis orientation. Beyond the solubility limit, phase mixture of MgO cubic rocksalt-type and ZnO wurtzite was taken place. The band gap energy increases from 3.26 to 3.53 eV as Mg concentration increases from 0 to 30 at %. The carrier concentration considerably decreases from 5.737 × 10
14
to 1.111 × 10
13
cm
–3
, and the resistivity drastically increases from 19 to 1688 Ohm cm as Mg content increases from 0 to 5 at %. A great attention has been paid to waveguiding measurements by prism coupler technique. The films were bi-guided up to 15%, single-guided at 20%, and none-guided transverse electric/transverse magnetic polarized modes at 30 at % of Mg concentration. Simultaneously, the refractive index was found to be decreased with Mg doping. |
| doi_str_mv | 10.1134/S1063782621100055 |
| format | Article |
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c
-axis orientation. Beyond the solubility limit, phase mixture of MgO cubic rocksalt-type and ZnO wurtzite was taken place. The band gap energy increases from 3.26 to 3.53 eV as Mg concentration increases from 0 to 30 at %. The carrier concentration considerably decreases from 5.737 × 10
14
to 1.111 × 10
13
cm
–3
, and the resistivity drastically increases from 19 to 1688 Ohm cm as Mg content increases from 0 to 5 at %. A great attention has been paid to waveguiding measurements by prism coupler technique. The films were bi-guided up to 15%, single-guided at 20%, and none-guided transverse electric/transverse magnetic polarized modes at 30 at % of Mg concentration. Simultaneously, the refractive index was found to be decreased with Mg doping.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782621100055</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Carrier density ; Dielectric films ; Doping ; Electric properties ; Energy gap ; Equipment and supplies ; Fiber optics ; Glass substrates ; Magnetic Materials ; Magnetism ; Optical properties ; Physics ; Physics and Astronomy ; Pyrolysis ; Refractivity ; Spray pyrolysis ; Thin films ; Wurtzite ; Zinc oxide</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2021-12, Vol.55 (Suppl 1), p.S72-S79</ispartof><rights>Pleiades Publishing, Ltd. 2021. ISSN 1063-7826, Semiconductors, 2021, Vol. 55, Suppl. 1, pp. S72–S79. © Pleiades Publishing, Ltd., 2021.</rights><rights>COPYRIGHT 2021 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c285t-899fb311b2ecc57e28b7576fa8d0bf8621569093903c0c5fb1d53dbb114e1323</citedby><cites>FETCH-LOGICAL-c285t-899fb311b2ecc57e28b7576fa8d0bf8621569093903c0c5fb1d53dbb114e1323</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782621100055$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782621100055$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Bouachiba, Y.</creatorcontrib><creatorcontrib>Taabouche, A.</creatorcontrib><creatorcontrib>Bouabellou, A.</creatorcontrib><creatorcontrib>Zemieche, A. M.</creatorcontrib><creatorcontrib>Ghellil, N.</creatorcontrib><creatorcontrib>Serrar, H.</creatorcontrib><creatorcontrib>Aouati, R.</creatorcontrib><creatorcontrib>Djaaboube, H.</creatorcontrib><creatorcontrib>Hanini, F.</creatorcontrib><creatorcontrib>Boukentoucha, C.</creatorcontrib><title>Waveguiding Regime Control by Varying the Refractive Index for MgZnO Sprayed Thin Films</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>In this work, ZnO and MgZnO thin films were deposited onto glass substrates by spray pyrolysis processes. The structural, optical, electrical, and waveguiding properties of the films were studied over Mg doping levels ranging from 0 to 30 at %. With an increase of Mg concentration up to 20 at %, XRD investigation reveals that the films crystallize in single ZnO wurtzite structure with a preferential
c
-axis orientation. Beyond the solubility limit, phase mixture of MgO cubic rocksalt-type and ZnO wurtzite was taken place. The band gap energy increases from 3.26 to 3.53 eV as Mg concentration increases from 0 to 30 at %. The carrier concentration considerably decreases from 5.737 × 10
14
to 1.111 × 10
13
cm
–3
, and the resistivity drastically increases from 19 to 1688 Ohm cm as Mg content increases from 0 to 5 at %. A great attention has been paid to waveguiding measurements by prism coupler technique. The films were bi-guided up to 15%, single-guided at 20%, and none-guided transverse electric/transverse magnetic polarized modes at 30 at % of Mg concentration. Simultaneously, the refractive index was found to be decreased with Mg doping.</description><subject>Carrier density</subject><subject>Dielectric films</subject><subject>Doping</subject><subject>Electric properties</subject><subject>Energy gap</subject><subject>Equipment and supplies</subject><subject>Fiber optics</subject><subject>Glass substrates</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Optical properties</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Pyrolysis</subject><subject>Refractivity</subject><subject>Spray pyrolysis</subject><subject>Thin films</subject><subject>Wurtzite</subject><subject>Zinc oxide</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp1kE1Lw0AQhoMoWKs_wNuC5-hMNpuPYylWC5WCLRa8hHzMpluSTd2kxf57N0bwILKHWfZ9n9mZ13FuEe4Ruf-wQgh4GHmBhwgAQpw5I4QY3MAP4_P-HnC31y-dq7bdASBGwh85m016pPKgCqVL9kqlqolNG92ZpmLZib2l5tQr3ZasKk2ad-pIbK4L-mSyMeylfNdLttqb9EQFW2-VZjNV1e21cyHTqqWbnzp21rPH9fTZXSyf5tPJws29SHRuFMcy44iZR3kuQvKiLBRhINOogExGdhsRxBDzGHgOuZAZFoIXWYboE3KPj527oe3eNB8Hartk1xyMtj8mXiAw5H7w7bofXGVaUaK0bDq7iT0F1SpvNEll3ychQASC-2ABHIDcNG1rSCZ7o2qbRYKQ9Hknf_K2jDcwrfXqkszvKP9DX5OXf9c</recordid><startdate>20211201</startdate><enddate>20211201</enddate><creator>Bouachiba, Y.</creator><creator>Taabouche, A.</creator><creator>Bouabellou, A.</creator><creator>Zemieche, A. M.</creator><creator>Ghellil, N.</creator><creator>Serrar, H.</creator><creator>Aouati, R.</creator><creator>Djaaboube, H.</creator><creator>Hanini, F.</creator><creator>Boukentoucha, C.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20211201</creationdate><title>Waveguiding Regime Control by Varying the Refractive Index for MgZnO Sprayed Thin Films</title><author>Bouachiba, Y. ; Taabouche, A. ; Bouabellou, A. ; Zemieche, A. M. ; Ghellil, N. ; Serrar, H. ; Aouati, R. ; Djaaboube, H. ; Hanini, F. ; Boukentoucha, C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c285t-899fb311b2ecc57e28b7576fa8d0bf8621569093903c0c5fb1d53dbb114e1323</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Carrier density</topic><topic>Dielectric films</topic><topic>Doping</topic><topic>Electric properties</topic><topic>Energy gap</topic><topic>Equipment and supplies</topic><topic>Fiber optics</topic><topic>Glass substrates</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>Optical properties</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Pyrolysis</topic><topic>Refractivity</topic><topic>Spray pyrolysis</topic><topic>Thin films</topic><topic>Wurtzite</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bouachiba, Y.</creatorcontrib><creatorcontrib>Taabouche, A.</creatorcontrib><creatorcontrib>Bouabellou, A.</creatorcontrib><creatorcontrib>Zemieche, A. M.</creatorcontrib><creatorcontrib>Ghellil, N.</creatorcontrib><creatorcontrib>Serrar, H.</creatorcontrib><creatorcontrib>Aouati, R.</creatorcontrib><creatorcontrib>Djaaboube, H.</creatorcontrib><creatorcontrib>Hanini, F.</creatorcontrib><creatorcontrib>Boukentoucha, C.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bouachiba, Y.</au><au>Taabouche, A.</au><au>Bouabellou, A.</au><au>Zemieche, A. M.</au><au>Ghellil, N.</au><au>Serrar, H.</au><au>Aouati, R.</au><au>Djaaboube, H.</au><au>Hanini, F.</au><au>Boukentoucha, C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Waveguiding Regime Control by Varying the Refractive Index for MgZnO Sprayed Thin Films</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2021-12-01</date><risdate>2021</risdate><volume>55</volume><issue>Suppl 1</issue><spage>S72</spage><epage>S79</epage><pages>S72-S79</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>In this work, ZnO and MgZnO thin films were deposited onto glass substrates by spray pyrolysis processes. The structural, optical, electrical, and waveguiding properties of the films were studied over Mg doping levels ranging from 0 to 30 at %. With an increase of Mg concentration up to 20 at %, XRD investigation reveals that the films crystallize in single ZnO wurtzite structure with a preferential
c
-axis orientation. Beyond the solubility limit, phase mixture of MgO cubic rocksalt-type and ZnO wurtzite was taken place. The band gap energy increases from 3.26 to 3.53 eV as Mg concentration increases from 0 to 30 at %. The carrier concentration considerably decreases from 5.737 × 10
14
to 1.111 × 10
13
cm
–3
, and the resistivity drastically increases from 19 to 1688 Ohm cm as Mg content increases from 0 to 5 at %. A great attention has been paid to waveguiding measurements by prism coupler technique. The films were bi-guided up to 15%, single-guided at 20%, and none-guided transverse electric/transverse magnetic polarized modes at 30 at % of Mg concentration. Simultaneously, the refractive index was found to be decreased with Mg doping.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782621100055</doi></addata></record> |
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| subjects | Carrier density Dielectric films Doping Electric properties Energy gap Equipment and supplies Fiber optics Glass substrates Magnetic Materials Magnetism Optical properties Physics Physics and Astronomy Pyrolysis Refractivity Spray pyrolysis Thin films Wurtzite Zinc oxide |
| title | Waveguiding Regime Control by Varying the Refractive Index for MgZnO Sprayed Thin Films |
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