Direct numerical simulation of atomization by jet impact using moving particle semi-implicit method with GPU acceleration
Impinging atomization of two jets is numerically simulated using the GPU (Graphics Processing Unit) accelerated moving particle semi-implicit (MPS) method. The acceleration ratio of the GPU-accelerated code is 11.75, which proves the validity of GPU acceleration. Three jet impact modes under differe...
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Veröffentlicht in: | Computational particle mechanics 2022-05, Vol.9 (3), p.499-512 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Impinging atomization of two jets is numerically simulated using the GPU (Graphics Processing Unit) accelerated moving particle semi-implicit (MPS) method. The acceleration ratio of the GPU-accelerated code is 11.75, which proves the validity of GPU acceleration. Three jet impact modes under different impinging velocities are successfully simulated. The numerical simulations successfully capture the formation of liquid films, the breaking of liquid films into liquid filaments and the breaking of liquid filaments into droplets. Under the flapping-sheet mode, i.e., the atomization phenomena, simulated atomization parameters such as spray angle, jet breakup length and Sauter mean diameter (SMD) agree well the experiment results, which proves the validity of the GPU-accelerated MPS method in the simulations of atomization problem. Thereafter, the GPU-accelerated MPS code is applied to simulate the impact atomization of double jets under typical 16 working conditions. The impinging velocity and angle can affect the atomization to a great extent. With the increasement of the impinging velocity and angle, the spray angle increases while the jet breakup length and SMD decrease, which indicates that the atomization is intensified. When the impinging momentum ratio and jet diameter ratio are not equal to 1.0, defective atomization occurs. With the increasement of the impinging momentum ratio and jet diameter ratio, the spray angle is almost same and the breakup length and SMD increase. |
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ISSN: | 2196-4378 2196-4386 |
DOI: | 10.1007/s40571-021-00424-y |