Influence of Pb2+ doping in the optical and electro-optical properties of SnO2 thin films

Different types of doping incorporated to tin dioxide (SnO2) have been reported in order to control its bandgap aiming optoelectronic applications, such as transparent electrodes, solar cells and displays. In this work, the doping of SnO2 with lead in the oxidation state 2+ (Pb2 +) is investigated,...

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Veröffentlicht in:	Materials chemistry and physics 2022-02, Vol.278, p.125571, Article 125571
Hauptverfasser:	dos Santos, Stevan B.O., Boratto, Miguel H., Ramos, Roberto A., Scalvi, Luis V.A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bandgap engineering Capture energy Dip coatings Doping Electrons Energy gap Energy levels Immersion coating Interstitial impurities Low temperature Optical properties Optoelectronics Oxidation Pb2+ doped SnO2 Persistent photoconductivity Photoconductivity Photovoltaic cells Sol-gel processes Solar cells Thin films Tin dioxide Urbach energy Valence Valence band
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