Improvement in carrier mobility through band-gap engineering in atomic-layer-deposited In-Ga-Zn-O stacks

This paper reports the performance improvement of heterojunction channel field-effect transistor using an atomic-layer-deposited InGaZnO (IGZO) channel on basis of a band alignment. The heterojunction stack consisted of a 5 nm-thick In0.61Ga0.16Zn0.23O confinement layer (CL) and a 2 nm-thick In0.52G...

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Veröffentlicht in:	Journal of alloys and compounds 2022-05, Vol.903, p.163876, Article 163876
Hauptverfasser:	Seul, Hyeon Joo, Cho, Jae Hoon, Hur, Jae Seok, Cho, Min Hoe, Cho, Min Hee, Ryu, Min Tae, Jeong, Jae Kyeong
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic layer deposition Barrier layers Carrier mobility Confinement Diffusion layers Electron diffusion Energy gap Field effect transistors Free electrons Hafnium oxide Hetero-junction Heterojunctions High mobility Indium gallium zinc oxide Semiconductor devices Thickness Thin-film transistor Transistors
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