Bi-stable toggle switching in magnetic tunnel junctions using sub-nanosecond Joule heat pulses

In this study, bi-stable toggle magnetization switching in magnetic tunnel junctions induced by electrically injected sub-nanosecond unipolar heat pulses was demonstrated. The switching probability of magnetization between bi-stable states was estimated by applying 0.5 ns voltage pulses and measurin...

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Veröffentlicht in:Japanese Journal of Applied Physics 2022-04, Vol.61 (4), p.40905
Hauptverfasser: Kaneda, Yuma, Goto, Minori, Mizuno, Tomohito, Yamane, Takekazu, Degawa, Naomichi, Suzuki, Tsuyoshi, Shimura, Atsushi, Aoki, Susumu, Urabe, Junichiro, Hara, Shinji, Nomura, Hikaru, Suzuki, Yoshishige
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Sprache:eng
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Zusammenfassung:In this study, bi-stable toggle magnetization switching in magnetic tunnel junctions induced by electrically injected sub-nanosecond unipolar heat pulses was demonstrated. The switching probability of magnetization between bi-stable states was estimated by applying 0.5 ns voltage pulses and measuring the perpendicular component of the magnetization direction. The maximum switching probability was approximately 70%, suggesting that bi-stable toggle magnetization switching was induced by the torque created by the Joule-heat-induced magnetic anisotropy change. Joule-heat-driven magnetization switching has the potential to become a fundamental technology for fast spin control.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ac4c4f