Growth and characterization of (Ga1−xGdx)2O3 by pulsed laser deposition for wide bandgap applications
Thin film wide bandgap Ga 2 O 3 based alloys are important for applications in high power electronic, gate dielectric, deep UV photonics, spintronics and nuclear detectors. Epitaxial (Ga 1 − x Gd x ) 2 O 3 thin films with varied x were successfully grown on Al 2 O 3 (0001) substrates to tune the mat...
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| Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 2022-05, Vol.128 (5), Article 366 |
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| container_title | Applied physics. A, Materials science & processing |
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| creator | Mia, Md Dalim Samuels, Brian C. Borges, Pablo D. Scolfaro, Luisa Siddique, Anwar Saha, Jibesh Kanti Talukder, Abdul Ahad Droopad, Ravi |
| description | Thin film wide bandgap Ga
2
O
3
based alloys are important for applications in high power electronic, gate dielectric, deep UV photonics, spintronics and nuclear detectors. Epitaxial (Ga
1
−
x
Gd
x
)
2
O
3
thin films with varied
x
were successfully grown on Al
2
O
3
(0001) substrates to tune the materials properties using variations in the growth parameters. High growth temperatures favor the formation of the monoclinic β-
(
Ga
1
−
x
Gd
x
)
2
O
3
phase; the higher the Gd composition, the greater the growth temperature required for high quality crystalline thin films. Incorporation of Gd into Ga
2
O
3
crystal expands the crystal lattice causing peak shift toward lower angle. UV–vis measurements demonstrate a slight red shift of the bandgap (4.99–4.82 eV) in comparison with the pure β-Ga
2
O
3
. Extracted refractive index from surface ellipsometry were in the range of 1.86–1.92. XPS spectroscopy confirmed the presence of Gd
3+
oxidation states. Current voltage measurements demonstrate Gd doping increases the resistivity of the samples. Finally, our findings are confirmed by density functional study. |
| doi_str_mv | 10.1007/s00339-022-05476-2 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2646577438</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2646577438</sourcerecordid><originalsourceid>FETCH-LOGICAL-c2342-b99c4636c086476e4a82ef53ed6869f8243ab14591bc3dafd06da92b458237d03</originalsourceid><addsrcrecordid>eNp9kLFOwzAURS0EEqXwA0yWWGAIOM-OE4-oogGpUheYLcd22lQlDnaqtnwBM5_Il2AaJDa8PFm65z69g9BlSm5TQvK7QAilIiEACclYzhM4QqOU0fjllByjEREsTwoq-Ck6C2FF4mMAI7Qovdv2S6xag_VSeaV765t31Teuxa7G16VKvz4-d6XZ3cCc4mqPu806WIPXKliPje1caA7p2nm8bYzFVSxbqA6rrls3-lAVztFJrSJ38TvH6GX68Dx5TGbz8mlyP0s0UAZJJYRmnHJNCh7PsEwVYOuMWsMLLuoCGFVVyjKRVpoaVRvCjRJQsawAmhtCx-hq6O28e9vY0MuV2_g2rpTAGc_ynNEipmBIae9C8LaWnW9eld_LlMgfoXIQKqNQeRAqIUJ0gEIMtwvr_6r_ob4BQuh5EQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2646577438</pqid></control><display><type>article</type><title>Growth and characterization of (Ga1−xGdx)2O3 by pulsed laser deposition for wide bandgap applications</title><source>SpringerNature Journals</source><creator>Mia, Md Dalim ; Samuels, Brian C. ; Borges, Pablo D. ; Scolfaro, Luisa ; Siddique, Anwar ; Saha, Jibesh Kanti ; Talukder, Abdul Ahad ; Droopad, Ravi</creator><creatorcontrib>Mia, Md Dalim ; Samuels, Brian C. ; Borges, Pablo D. ; Scolfaro, Luisa ; Siddique, Anwar ; Saha, Jibesh Kanti ; Talukder, Abdul Ahad ; Droopad, Ravi</creatorcontrib><description>Thin film wide bandgap Ga
2
O
3
based alloys are important for applications in high power electronic, gate dielectric, deep UV photonics, spintronics and nuclear detectors. Epitaxial (Ga
1
−
x
Gd
x
)
2
O
3
thin films with varied
x
were successfully grown on Al
2
O
3
(0001) substrates to tune the materials properties using variations in the growth parameters. High growth temperatures favor the formation of the monoclinic β-
(
Ga
1
−
x
Gd
x
)
2
O
3
phase; the higher the Gd composition, the greater the growth temperature required for high quality crystalline thin films. Incorporation of Gd into Ga
2
O
3
crystal expands the crystal lattice causing peak shift toward lower angle. UV–vis measurements demonstrate a slight red shift of the bandgap (4.99–4.82 eV) in comparison with the pure β-Ga
2
O
3
. Extracted refractive index from surface ellipsometry were in the range of 1.86–1.92. XPS spectroscopy confirmed the presence of Gd
3+
oxidation states. Current voltage measurements demonstrate Gd doping increases the resistivity of the samples. Finally, our findings are confirmed by density functional study.</description><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s00339-022-05476-2</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>Aluminum oxide ; Applied physics ; Characterization and Evaluation of Materials ; Condensed Matter Physics ; Crystal lattices ; Doppler effect ; Electrical measurement ; Ellipsometry ; Energy gap ; Gadolinium ; Gallium oxides ; Machines ; Manufacturing ; Material properties ; Materials science ; Nanotechnology ; Optical and Electronic Materials ; Oxidation ; Physics ; Physics and Astronomy ; Processes ; Pulsed laser deposition ; Pulsed lasers ; Red shift ; Refractivity ; Spintronics ; Substrates ; Surfaces and Interfaces ; Thin Films</subject><ispartof>Applied physics. A, Materials science & processing, 2022-05, Vol.128 (5), Article 366</ispartof><rights>The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature 2022</rights><rights>The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature 2022.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2342-b99c4636c086476e4a82ef53ed6869f8243ab14591bc3dafd06da92b458237d03</citedby><cites>FETCH-LOGICAL-c2342-b99c4636c086476e4a82ef53ed6869f8243ab14591bc3dafd06da92b458237d03</cites><orcidid>0000-0002-0927-6447</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s00339-022-05476-2$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s00339-022-05476-2$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Mia, Md Dalim</creatorcontrib><creatorcontrib>Samuels, Brian C.</creatorcontrib><creatorcontrib>Borges, Pablo D.</creatorcontrib><creatorcontrib>Scolfaro, Luisa</creatorcontrib><creatorcontrib>Siddique, Anwar</creatorcontrib><creatorcontrib>Saha, Jibesh Kanti</creatorcontrib><creatorcontrib>Talukder, Abdul Ahad</creatorcontrib><creatorcontrib>Droopad, Ravi</creatorcontrib><title>Growth and characterization of (Ga1−xGdx)2O3 by pulsed laser deposition for wide bandgap applications</title><title>Applied physics. A, Materials science & processing</title><addtitle>Appl. Phys. A</addtitle><description>Thin film wide bandgap Ga
2
O
3
based alloys are important for applications in high power electronic, gate dielectric, deep UV photonics, spintronics and nuclear detectors. Epitaxial (Ga
1
−
x
Gd
x
)
2
O
3
thin films with varied
x
were successfully grown on Al
2
O
3
(0001) substrates to tune the materials properties using variations in the growth parameters. High growth temperatures favor the formation of the monoclinic β-
(
Ga
1
−
x
Gd
x
)
2
O
3
phase; the higher the Gd composition, the greater the growth temperature required for high quality crystalline thin films. Incorporation of Gd into Ga
2
O
3
crystal expands the crystal lattice causing peak shift toward lower angle. UV–vis measurements demonstrate a slight red shift of the bandgap (4.99–4.82 eV) in comparison with the pure β-Ga
2
O
3
. Extracted refractive index from surface ellipsometry were in the range of 1.86–1.92. XPS spectroscopy confirmed the presence of Gd
3+
oxidation states. Current voltage measurements demonstrate Gd doping increases the resistivity of the samples. Finally, our findings are confirmed by density functional study.</description><subject>Aluminum oxide</subject><subject>Applied physics</subject><subject>Characterization and Evaluation of Materials</subject><subject>Condensed Matter Physics</subject><subject>Crystal lattices</subject><subject>Doppler effect</subject><subject>Electrical measurement</subject><subject>Ellipsometry</subject><subject>Energy gap</subject><subject>Gadolinium</subject><subject>Gallium oxides</subject><subject>Machines</subject><subject>Manufacturing</subject><subject>Material properties</subject><subject>Materials science</subject><subject>Nanotechnology</subject><subject>Optical and Electronic Materials</subject><subject>Oxidation</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Processes</subject><subject>Pulsed laser deposition</subject><subject>Pulsed lasers</subject><subject>Red shift</subject><subject>Refractivity</subject><subject>Spintronics</subject><subject>Substrates</subject><subject>Surfaces and Interfaces</subject><subject>Thin Films</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp9kLFOwzAURS0EEqXwA0yWWGAIOM-OE4-oogGpUheYLcd22lQlDnaqtnwBM5_Il2AaJDa8PFm65z69g9BlSm5TQvK7QAilIiEACclYzhM4QqOU0fjllByjEREsTwoq-Ck6C2FF4mMAI7Qovdv2S6xag_VSeaV765t31Teuxa7G16VKvz4-d6XZ3cCc4mqPu806WIPXKliPje1caA7p2nm8bYzFVSxbqA6rrls3-lAVztFJrSJ38TvH6GX68Dx5TGbz8mlyP0s0UAZJJYRmnHJNCh7PsEwVYOuMWsMLLuoCGFVVyjKRVpoaVRvCjRJQsawAmhtCx-hq6O28e9vY0MuV2_g2rpTAGc_ynNEipmBIae9C8LaWnW9eld_LlMgfoXIQKqNQeRAqIUJ0gEIMtwvr_6r_ob4BQuh5EQ</recordid><startdate>20220501</startdate><enddate>20220501</enddate><creator>Mia, Md Dalim</creator><creator>Samuels, Brian C.</creator><creator>Borges, Pablo D.</creator><creator>Scolfaro, Luisa</creator><creator>Siddique, Anwar</creator><creator>Saha, Jibesh Kanti</creator><creator>Talukder, Abdul Ahad</creator><creator>Droopad, Ravi</creator><general>Springer Berlin Heidelberg</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-0927-6447</orcidid></search><sort><creationdate>20220501</creationdate><title>Growth and characterization of (Ga1−xGdx)2O3 by pulsed laser deposition for wide bandgap applications</title><author>Mia, Md Dalim ; Samuels, Brian C. ; Borges, Pablo D. ; Scolfaro, Luisa ; Siddique, Anwar ; Saha, Jibesh Kanti ; Talukder, Abdul Ahad ; Droopad, Ravi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2342-b99c4636c086476e4a82ef53ed6869f8243ab14591bc3dafd06da92b458237d03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Aluminum oxide</topic><topic>Applied physics</topic><topic>Characterization and Evaluation of Materials</topic><topic>Condensed Matter Physics</topic><topic>Crystal lattices</topic><topic>Doppler effect</topic><topic>Electrical measurement</topic><topic>Ellipsometry</topic><topic>Energy gap</topic><topic>Gadolinium</topic><topic>Gallium oxides</topic><topic>Machines</topic><topic>Manufacturing</topic><topic>Material properties</topic><topic>Materials science</topic><topic>Nanotechnology</topic><topic>Optical and Electronic Materials</topic><topic>Oxidation</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Processes</topic><topic>Pulsed laser deposition</topic><topic>Pulsed lasers</topic><topic>Red shift</topic><topic>Refractivity</topic><topic>Spintronics</topic><topic>Substrates</topic><topic>Surfaces and Interfaces</topic><topic>Thin Films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mia, Md Dalim</creatorcontrib><creatorcontrib>Samuels, Brian C.</creatorcontrib><creatorcontrib>Borges, Pablo D.</creatorcontrib><creatorcontrib>Scolfaro, Luisa</creatorcontrib><creatorcontrib>Siddique, Anwar</creatorcontrib><creatorcontrib>Saha, Jibesh Kanti</creatorcontrib><creatorcontrib>Talukder, Abdul Ahad</creatorcontrib><creatorcontrib>Droopad, Ravi</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics. A, Materials science & processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mia, Md Dalim</au><au>Samuels, Brian C.</au><au>Borges, Pablo D.</au><au>Scolfaro, Luisa</au><au>Siddique, Anwar</au><au>Saha, Jibesh Kanti</au><au>Talukder, Abdul Ahad</au><au>Droopad, Ravi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth and characterization of (Ga1−xGdx)2O3 by pulsed laser deposition for wide bandgap applications</atitle><jtitle>Applied physics. A, Materials science & processing</jtitle><stitle>Appl. Phys. A</stitle><date>2022-05-01</date><risdate>2022</risdate><volume>128</volume><issue>5</issue><artnum>366</artnum><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>Thin film wide bandgap Ga
2
O
3
based alloys are important for applications in high power electronic, gate dielectric, deep UV photonics, spintronics and nuclear detectors. Epitaxial (Ga
1
−
x
Gd
x
)
2
O
3
thin films with varied
x
were successfully grown on Al
2
O
3
(0001) substrates to tune the materials properties using variations in the growth parameters. High growth temperatures favor the formation of the monoclinic β-
(
Ga
1
−
x
Gd
x
)
2
O
3
phase; the higher the Gd composition, the greater the growth temperature required for high quality crystalline thin films. Incorporation of Gd into Ga
2
O
3
crystal expands the crystal lattice causing peak shift toward lower angle. UV–vis measurements demonstrate a slight red shift of the bandgap (4.99–4.82 eV) in comparison with the pure β-Ga
2
O
3
. Extracted refractive index from surface ellipsometry were in the range of 1.86–1.92. XPS spectroscopy confirmed the presence of Gd
3+
oxidation states. Current voltage measurements demonstrate Gd doping increases the resistivity of the samples. Finally, our findings are confirmed by density functional study.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s00339-022-05476-2</doi><orcidid>https://orcid.org/0000-0002-0927-6447</orcidid></addata></record> |
| fulltext | fulltext |
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| issn | 0947-8396 1432-0630 |
| language | eng |
| recordid | cdi_proquest_journals_2646577438 |
| source | SpringerNature Journals |
| subjects | Aluminum oxide Applied physics Characterization and Evaluation of Materials Condensed Matter Physics Crystal lattices Doppler effect Electrical measurement Ellipsometry Energy gap Gadolinium Gallium oxides Machines Manufacturing Material properties Materials science Nanotechnology Optical and Electronic Materials Oxidation Physics Physics and Astronomy Processes Pulsed laser deposition Pulsed lasers Red shift Refractivity Spintronics Substrates Surfaces and Interfaces Thin Films |
| title | Growth and characterization of (Ga1−xGdx)2O3 by pulsed laser deposition for wide bandgap applications |
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