Forming-Free Memristors Based on Hafnium Oxide Processed in Electron Cyclotron Resonance Hydrogen Plasma
It is shown that the treatment of stoichiometric HfO 2 , which is synthesized by atomic layer deposition, in electron cyclotron resonance hydrogen plasma leads to a significant depletion of the film in oxygen and the formation of nonstoichiometric HfO x ( ). The longer the treatment time, the higher...
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| Veröffentlicht in: | JETP letters 2022, Vol.115 (2), p.79-83 |
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| creator | Perevalov, T. V. Iskhakzai, R. M. Kh Prosvirin, I. P. Aliev, V. Sh Gritsenko, V. A. |
| description | It is shown that the treatment of stoichiometric HfO
2
, which is synthesized by atomic layer deposition, in electron cyclotron resonance hydrogen plasma leads to a significant depletion of the film in oxygen and the formation of nonstoichiometric HfO
x
(
). The longer the treatment time, the higher the degree of oxygen depletion. The charge transfer in the films under study occurs by phonon-assisted tunneling between oxygen vacancies serving as traps. It has been found that the
-Si/HfO
x
/Ni structures, where the oxide layer is treated in the electron cyclotron resonance hydrogen plasma, have memristor properties: they are reversibly switched between high and low resistance states. The fabricated memristor structures are forming-free. |
| doi_str_mv | 10.1134/S0021364022020084 |
| format | Article |
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2
, which is synthesized by atomic layer deposition, in electron cyclotron resonance hydrogen plasma leads to a significant depletion of the film in oxygen and the formation of nonstoichiometric HfO
x
(
). The longer the treatment time, the higher the degree of oxygen depletion. The charge transfer in the films under study occurs by phonon-assisted tunneling between oxygen vacancies serving as traps. It has been found that the
-Si/HfO
x
/Ni structures, where the oxide layer is treated in the electron cyclotron resonance hydrogen plasma, have memristor properties: they are reversibly switched between high and low resistance states. The fabricated memristor structures are forming-free.</description><identifier>ISSN: 0021-3640</identifier><identifier>EISSN: 1090-6487</identifier><identifier>DOI: 10.1134/S0021364022020084</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Atomic ; Atomic layer epitaxy ; Biological and Medical Physics ; Biophysics ; Charge transfer ; Condensed Matter ; Cyclotron resonance ; Depletion ; Electron cyclotron resonance ; Electrons ; Hafnium oxide ; Hydrogen plasma ; Low resistance ; Memristors ; Molecular ; Optical and Plasma Physics ; Oxygen ; Particle and Nuclear Physics ; Physics ; Physics and Astronomy ; Quantum Information Technology ; Solid State Physics ; Spintronics</subject><ispartof>JETP letters, 2022, Vol.115 (2), p.79-83</ispartof><rights>Pleiades Publishing, Inc. 2022. ISSN 0021-3640, JETP Letters, 2022, Vol. 115, No. 2, pp. 79–83. © Pleiades Publishing, Inc., 2022. Russian Text © The Author(s), 2022, published in Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2022, Vol. 115, No. 2, pp. 89–93.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c246t-60012650cfc040888c8b4223c5970ac9f7f369d76a86dff8fc72a6f1bf813ce83</citedby><cites>FETCH-LOGICAL-c246t-60012650cfc040888c8b4223c5970ac9f7f369d76a86dff8fc72a6f1bf813ce83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S0021364022020084$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S0021364022020084$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27923,27924,41487,42556,51318</link.rule.ids></links><search><creatorcontrib>Perevalov, T. V.</creatorcontrib><creatorcontrib>Iskhakzai, R. M. Kh</creatorcontrib><creatorcontrib>Prosvirin, I. P.</creatorcontrib><creatorcontrib>Aliev, V. Sh</creatorcontrib><creatorcontrib>Gritsenko, V. A.</creatorcontrib><title>Forming-Free Memristors Based on Hafnium Oxide Processed in Electron Cyclotron Resonance Hydrogen Plasma</title><title>JETP letters</title><addtitle>Jetp Lett</addtitle><description>It is shown that the treatment of stoichiometric HfO
2
, which is synthesized by atomic layer deposition, in electron cyclotron resonance hydrogen plasma leads to a significant depletion of the film in oxygen and the formation of nonstoichiometric HfO
x
(
). The longer the treatment time, the higher the degree of oxygen depletion. The charge transfer in the films under study occurs by phonon-assisted tunneling between oxygen vacancies serving as traps. It has been found that the
-Si/HfO
x
/Ni structures, where the oxide layer is treated in the electron cyclotron resonance hydrogen plasma, have memristor properties: they are reversibly switched between high and low resistance states. The fabricated memristor structures are forming-free.</description><subject>Atomic</subject><subject>Atomic layer epitaxy</subject><subject>Biological and Medical Physics</subject><subject>Biophysics</subject><subject>Charge transfer</subject><subject>Condensed Matter</subject><subject>Cyclotron resonance</subject><subject>Depletion</subject><subject>Electron cyclotron resonance</subject><subject>Electrons</subject><subject>Hafnium oxide</subject><subject>Hydrogen plasma</subject><subject>Low resistance</subject><subject>Memristors</subject><subject>Molecular</subject><subject>Optical and Plasma Physics</subject><subject>Oxygen</subject><subject>Particle and Nuclear Physics</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Quantum Information Technology</subject><subject>Solid State Physics</subject><subject>Spintronics</subject><issn>0021-3640</issn><issn>1090-6487</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp1kEtPwzAQhC0EEqXwA7hZ4hxYO67jHKHqA6moFY9z5Drrkiqxi51K9N-TUCQOiNOuNN_MroaQawa3jKXi7gWAs1QK4Bw4gBInZMAgh0QKlZ2SQS8nvX5OLmLcAjCm0mxA3qc-NJXbJNOASJ-wCVVsfYj0QUcsqXd0rq2r9g1dflYl0lXwBmMvVY5OajRt6JjxwdT-e3vG6J12Bun8UAa_QUdXtY6NviRnVtcRr37mkLxNJ6_jebJYzh7H94vEcCHbRHafcTkCYw0IUEoZtRacp2aUZ6BNbjObyrzMpFaytFZZk3EtLVtbxVKDKh2Sm2PuLviPPca22Pp9cN3JgksxUplivKfYkTLBxxjQFrtQNTocCgZFX2jxp9DOw4-e2LFug-E3-X_TF7ibdy4</recordid><startdate>2022</startdate><enddate>2022</enddate><creator>Perevalov, T. V.</creator><creator>Iskhakzai, R. M. Kh</creator><creator>Prosvirin, I. P.</creator><creator>Aliev, V. Sh</creator><creator>Gritsenko, V. A.</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>2022</creationdate><title>Forming-Free Memristors Based on Hafnium Oxide Processed in Electron Cyclotron Resonance Hydrogen Plasma</title><author>Perevalov, T. V. ; Iskhakzai, R. M. Kh ; Prosvirin, I. P. ; Aliev, V. Sh ; Gritsenko, V. A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c246t-60012650cfc040888c8b4223c5970ac9f7f369d76a86dff8fc72a6f1bf813ce83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Atomic</topic><topic>Atomic layer epitaxy</topic><topic>Biological and Medical Physics</topic><topic>Biophysics</topic><topic>Charge transfer</topic><topic>Condensed Matter</topic><topic>Cyclotron resonance</topic><topic>Depletion</topic><topic>Electron cyclotron resonance</topic><topic>Electrons</topic><topic>Hafnium oxide</topic><topic>Hydrogen plasma</topic><topic>Low resistance</topic><topic>Memristors</topic><topic>Molecular</topic><topic>Optical and Plasma Physics</topic><topic>Oxygen</topic><topic>Particle and Nuclear Physics</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Quantum Information Technology</topic><topic>Solid State Physics</topic><topic>Spintronics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Perevalov, T. V.</creatorcontrib><creatorcontrib>Iskhakzai, R. M. Kh</creatorcontrib><creatorcontrib>Prosvirin, I. P.</creatorcontrib><creatorcontrib>Aliev, V. Sh</creatorcontrib><creatorcontrib>Gritsenko, V. A.</creatorcontrib><collection>CrossRef</collection><jtitle>JETP letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Perevalov, T. V.</au><au>Iskhakzai, R. M. Kh</au><au>Prosvirin, I. P.</au><au>Aliev, V. Sh</au><au>Gritsenko, V. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Forming-Free Memristors Based on Hafnium Oxide Processed in Electron Cyclotron Resonance Hydrogen Plasma</atitle><jtitle>JETP letters</jtitle><stitle>Jetp Lett</stitle><date>2022</date><risdate>2022</risdate><volume>115</volume><issue>2</issue><spage>79</spage><epage>83</epage><pages>79-83</pages><issn>0021-3640</issn><eissn>1090-6487</eissn><abstract>It is shown that the treatment of stoichiometric HfO
2
, which is synthesized by atomic layer deposition, in electron cyclotron resonance hydrogen plasma leads to a significant depletion of the film in oxygen and the formation of nonstoichiometric HfO
x
(
). The longer the treatment time, the higher the degree of oxygen depletion. The charge transfer in the films under study occurs by phonon-assisted tunneling between oxygen vacancies serving as traps. It has been found that the
-Si/HfO
x
/Ni structures, where the oxide layer is treated in the electron cyclotron resonance hydrogen plasma, have memristor properties: they are reversibly switched between high and low resistance states. The fabricated memristor structures are forming-free.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S0021364022020084</doi><tpages>5</tpages></addata></record> |
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| subjects | Atomic Atomic layer epitaxy Biological and Medical Physics Biophysics Charge transfer Condensed Matter Cyclotron resonance Depletion Electron cyclotron resonance Electrons Hafnium oxide Hydrogen plasma Low resistance Memristors Molecular Optical and Plasma Physics Oxygen Particle and Nuclear Physics Physics Physics and Astronomy Quantum Information Technology Solid State Physics Spintronics |
| title | Forming-Free Memristors Based on Hafnium Oxide Processed in Electron Cyclotron Resonance Hydrogen Plasma |
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