The Effect of Compressive and Tensile Strains on the Electron Structure of Phosphorene

A new promising semiconductor material (phosphorene) is studied using theoretical simulation. The possibilities of changing the magnitude and nature of interband transitions under the action of compressive and tensile stresses on the phosphorene crystal lattice are determined. It is found that phosp...

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Veröffentlicht in:	Physics of the solid state 2021-11, Vol.63 (11), p.1690-1694
Hauptverfasser:	Krivosheeva, A. V., Shaposhnikov, V. L., Štich, I.
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier mobility Compressive properties Crystal lattices Current carriers Electronic structure Electronics industry Nanoelectronics Nanotechnology devices Phosphorene Physics Physics and Astronomy Semiconductor materials Semiconductors Solid State Physics
Online-Zugang:	Volltext
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