Microwear mechanism of monocrystalline germanium

Germanium (Ge), as a higher mobility material, presents great merits for future semiconductor field-effect transistor devices. Extremely smooth Ge surface is required for high-performance devices, which depends on mechanical surface planarization. However, the defects generated during surface manufa...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Wear 2022-04, Vol.494-495, p.204270, Article 204270
Hauptverfasser: Feng, Chengqiang, Zhou, Huaicheng, Cui, Licong, Gao, Jian, Yu, Bingjun, Qian, Linmao
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!