Sn composition graded GeSn photodetectors on Si substrate with cutoff wavelength of 3.3 μm for mid-infrared Si photonics
The Sn composition graded GeSn layer with Sn content increased from 11% to 14.3% was grown on a Si substrate by molecular beam epitaxy. The structural properties of the GeSn layer are investigated, and the film is gradually relaxed along the thickness, reaching approximately 71.6%. The GeSn p–i–n de...
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| Veröffentlicht in: | Applied physics letters 2022-03, Vol.120 (12) |
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| container_title | Applied physics letters |
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| creator | Li, Mingming Zheng, Jun Liu, Xiangquan Zhu, Yupeng Niu, Chaoqun Pang, Yaqing Liu, Zhi Zuo, Yuhua Cheng, Buwen |
| description | The Sn composition graded GeSn layer with Sn content increased from 11% to 14.3% was grown on a Si substrate by molecular beam epitaxy. The structural properties of the GeSn layer are investigated, and the film is gradually relaxed along the thickness, reaching approximately 71.6%. The GeSn p–i–n detectors were fabricated by using a complementary metal oxide semiconductor compatible process. The GeSn detectors demonstrated a cutoff wavelength of approximately 3.3 μm at room temperature with a dark current of 0.3 A/cm2 @ -1 V. At a wavelength of 2000 nm, the GeSn detectors had a responsivity of 110 mA/W and -3 dB bandwidth (f3 dB) about 3 GHz. These results suggest that high Sn content relax GeSn can be grown by MBE and paves the way toward the feasibility of mid-infrared GeSn photonics. |
| doi_str_mv | 10.1063/5.0084940 |
| format | Article |
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The structural properties of the GeSn layer are investigated, and the film is gradually relaxed along the thickness, reaching approximately 71.6%. The GeSn p–i–n detectors were fabricated by using a complementary metal oxide semiconductor compatible process. The GeSn detectors demonstrated a cutoff wavelength of approximately 3.3 μm at room temperature with a dark current of 0.3 A/cm2 @ -1 V. At a wavelength of 2000 nm, the GeSn detectors had a responsivity of 110 mA/W and -3 dB bandwidth (f3 dB) about 3 GHz. These results suggest that high Sn content relax GeSn can be grown by MBE and paves the way toward the feasibility of mid-infrared GeSn photonics.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0084940</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; CMOS ; Composition ; Cut off wavelength ; Dark current ; Epitaxial growth ; Intermetallic compounds ; Molecular beam epitaxy ; Photonics ; Room temperature ; Sensors ; Silicon substrates ; Tin</subject><ispartof>Applied physics letters, 2022-03, Vol.120 (12)</ispartof><rights>Author(s)</rights><rights>2022 Author(s). 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The structural properties of the GeSn layer are investigated, and the film is gradually relaxed along the thickness, reaching approximately 71.6%. The GeSn p–i–n detectors were fabricated by using a complementary metal oxide semiconductor compatible process. The GeSn detectors demonstrated a cutoff wavelength of approximately 3.3 μm at room temperature with a dark current of 0.3 A/cm2 @ -1 V. At a wavelength of 2000 nm, the GeSn detectors had a responsivity of 110 mA/W and -3 dB bandwidth (f3 dB) about 3 GHz. These results suggest that high Sn content relax GeSn can be grown by MBE and paves the way toward the feasibility of mid-infrared GeSn photonics.</description><subject>Applied physics</subject><subject>CMOS</subject><subject>Composition</subject><subject>Cut off wavelength</subject><subject>Dark current</subject><subject>Epitaxial growth</subject><subject>Intermetallic compounds</subject><subject>Molecular beam epitaxy</subject><subject>Photonics</subject><subject>Room temperature</subject><subject>Sensors</subject><subject>Silicon substrates</subject><subject>Tin</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp9kM9KAzEQh4MoWKsH3yDgSWHrJNm_RylahYKH6jmk2aRN6W7WJGvpu_kMPpOpLXoQPA0z88038EPoksCIQM5usxFAmVYpHKEBgaJIGCHlMRoAAEvyKiOn6Mz7VWwzytgAbWctlrbprDfB2BYvnKhVjScqzrulDbZWQclgncdxOzPY93MfnAgKb0xYYtkHqzXeiHe1Vu0iTqzGbMTw50eDtXW4MXViWu2Ei9p4_y1tjfTn6ESLtVcXhzpErw_3L-PHZPo8eRrfTRPJaBESJoBlkgqdijLXIImolKaUCBBzwoDVuhYVlXVR0ZzNSykohbRIC5oSSpiu2BBd7b2ds2-98oGvbO_a-JLTPI1wCVUWqes9JZ313inNO2ca4bacAN8lyzN-SDayN3vWSxPELrYf-N26X5B3tf4P_mv-AqCKh-g</recordid><startdate>20220321</startdate><enddate>20220321</enddate><creator>Li, Mingming</creator><creator>Zheng, Jun</creator><creator>Liu, Xiangquan</creator><creator>Zhu, Yupeng</creator><creator>Niu, Chaoqun</creator><creator>Pang, Yaqing</creator><creator>Liu, Zhi</creator><creator>Zuo, Yuhua</creator><creator>Cheng, Buwen</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-6177-9685</orcidid><orcidid>https://orcid.org/0000-0002-6547-1458</orcidid><orcidid>https://orcid.org/0000-0001-5346-7569</orcidid><orcidid>https://orcid.org/0000-0002-8622-2661</orcidid></search><sort><creationdate>20220321</creationdate><title>Sn composition graded GeSn photodetectors on Si substrate with cutoff wavelength of 3.3 μm for mid-infrared Si photonics</title><author>Li, Mingming ; Zheng, Jun ; Liu, Xiangquan ; Zhu, Yupeng ; Niu, Chaoqun ; Pang, Yaqing ; Liu, Zhi ; Zuo, Yuhua ; Cheng, Buwen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-3a035c2af4a86f0c1a9ef221a0ab1303dfda92cd79263b8ca2204747241213f93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Applied physics</topic><topic>CMOS</topic><topic>Composition</topic><topic>Cut off wavelength</topic><topic>Dark current</topic><topic>Epitaxial growth</topic><topic>Intermetallic compounds</topic><topic>Molecular beam epitaxy</topic><topic>Photonics</topic><topic>Room temperature</topic><topic>Sensors</topic><topic>Silicon substrates</topic><topic>Tin</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Mingming</creatorcontrib><creatorcontrib>Zheng, Jun</creatorcontrib><creatorcontrib>Liu, Xiangquan</creatorcontrib><creatorcontrib>Zhu, Yupeng</creatorcontrib><creatorcontrib>Niu, Chaoqun</creatorcontrib><creatorcontrib>Pang, Yaqing</creatorcontrib><creatorcontrib>Liu, Zhi</creatorcontrib><creatorcontrib>Zuo, Yuhua</creatorcontrib><creatorcontrib>Cheng, Buwen</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, Mingming</au><au>Zheng, Jun</au><au>Liu, Xiangquan</au><au>Zhu, Yupeng</au><au>Niu, Chaoqun</au><au>Pang, Yaqing</au><au>Liu, Zhi</au><au>Zuo, Yuhua</au><au>Cheng, Buwen</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Sn composition graded GeSn photodetectors on Si substrate with cutoff wavelength of 3.3 μm for mid-infrared Si photonics</atitle><jtitle>Applied physics letters</jtitle><date>2022-03-21</date><risdate>2022</risdate><volume>120</volume><issue>12</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The Sn composition graded GeSn layer with Sn content increased from 11% to 14.3% was grown on a Si substrate by molecular beam epitaxy. The structural properties of the GeSn layer are investigated, and the film is gradually relaxed along the thickness, reaching approximately 71.6%. The GeSn p–i–n detectors were fabricated by using a complementary metal oxide semiconductor compatible process. The GeSn detectors demonstrated a cutoff wavelength of approximately 3.3 μm at room temperature with a dark current of 0.3 A/cm2 @ -1 V. At a wavelength of 2000 nm, the GeSn detectors had a responsivity of 110 mA/W and -3 dB bandwidth (f3 dB) about 3 GHz. These results suggest that high Sn content relax GeSn can be grown by MBE and paves the way toward the feasibility of mid-infrared GeSn photonics.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0084940</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0001-6177-9685</orcidid><orcidid>https://orcid.org/0000-0002-6547-1458</orcidid><orcidid>https://orcid.org/0000-0001-5346-7569</orcidid><orcidid>https://orcid.org/0000-0002-8622-2661</orcidid></addata></record> |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics CMOS Composition Cut off wavelength Dark current Epitaxial growth Intermetallic compounds Molecular beam epitaxy Photonics Room temperature Sensors Silicon substrates Tin |
| title | Sn composition graded GeSn photodetectors on Si substrate with cutoff wavelength of 3.3 μm for mid-infrared Si photonics |
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