Thermal Stability of HfO2|AlGaN|GaN Normally-Off Transistors with Ni|Au and Pt Gate Metals

A hybrid gate approach, including a two-step gate recess and a sputtered HfO 2 layer, is employed to fabricate HfO 2 |AlGaN|GaN normally-Off high electron mobility transistors (HEMTs). Ni|Au and Pt are used as gate metals in the studied metal–oxide–semiconductor (MOS)-type devices. The two-step gate...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2021-07, Vol.55 (7), p.608-616
Hauptverfasser:	Lin, Y.-C., Niu, J.-S., Liu, W.-C., Tsai, J.-H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Current leakage Electron gas Gallium nitrides Gas density Gold Hafnium oxide High electron mobility transistors Magnetic Materials Magnetism Metal oxide semiconductors MOS devices Physics Physics and Astronomy Platinum Semiconductor devices Thermal stability Threshold voltage Transconductance Transistors Work functions
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