Formation of Acceptor Centers in CdHgTe as a Result of Water and Heat Treatments
The influence of deionized water and heat treatments of samples of epitaxial Cd x Hg 1 − x Te films on the Hall and ellipsometric parameters is investigated. Water treatment reduces the refractive index of natural Cd x Hg 1 − x Te oxide from 2.1 to 1.2–1.4. This means that a substance with a low ref...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2021-05, Vol.55 (5), p.461-465 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
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| creator | Sidorov, G. Yu Sidorov, Yu. G. Shwets, V. A. Varavin, V. S. |
| description | The influence of deionized water and heat treatments of samples of epitaxial Cd
x
Hg
1 −
x
Te films on the Hall and ellipsometric parameters is investigated. Water treatment reduces the refractive index of natural Cd
x
Hg
1 −
x
Te oxide from 2.1 to 1.2–1.4. This means that a substance with a low refractive index, such as water, is introduced into the oxide. Boiling in water leads to the formation of acceptors with concentrations of up to 10
19
cm
–3
in Cd
x
Hg
1 −
x
Te. Changing the acidity of the medium from alkaline to acidic decelerates the formation of acceptors. Heat treatments after holding in water also lead to the formation of acceptors. It is concluded that an aqueous medium, including water that is absorbed by the natural oxide layer, leads to the formation of acceptors in Cd
x
Hg
1 −
x
Te. The acceptor concentration increases with the temperature of treatments and the amount of available water. |
| doi_str_mv | 10.1134/S1063782621040175 |
| format | Article |
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x
Hg
1 −
x
Te films on the Hall and ellipsometric parameters is investigated. Water treatment reduces the refractive index of natural Cd
x
Hg
1 −
x
Te oxide from 2.1 to 1.2–1.4. This means that a substance with a low refractive index, such as water, is introduced into the oxide. Boiling in water leads to the formation of acceptors with concentrations of up to 10
19
cm
–3
in Cd
x
Hg
1 −
x
Te. Changing the acidity of the medium from alkaline to acidic decelerates the formation of acceptors. Heat treatments after holding in water also lead to the formation of acceptors. It is concluded that an aqueous medium, including water that is absorbed by the natural oxide layer, leads to the formation of acceptors in Cd
x
Hg
1 −
x
Te. The acceptor concentration increases with the temperature of treatments and the amount of available water.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782621040175</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Aqueous solutions ; Deceleration ; Deionization ; Epitaxy ; Heat treatment ; Magnetic Materials ; Magnetism ; Physics ; Physics and Astronomy ; Purification ; Refractivity ; Water ; Water treatment</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2021-05, Vol.55 (5), p.461-465</ispartof><rights>Pleiades Publishing, Ltd. 2021. ISSN 1063-7826, Semiconductors, 2021, Vol. 55, No. 5, pp. 461–465. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7826, Semiconductors, 2021. © Pleiades Publishing, Ltd., 2021. Russian Text © The Author(s), 2021, published in Fizika i Tekhnika Poluprovodnikov, 2021, Vol. 55, No. 4, pp. 331–335.</rights><rights>COPYRIGHT 2021 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c307t-30c186c5e776bb6b2b6649bb89edcc182ea4f10f671085dc38a46bc6e6ff32243</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782621040175$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782621040175$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27922,27923,41486,42555,51317</link.rule.ids></links><search><creatorcontrib>Sidorov, G. Yu</creatorcontrib><creatorcontrib>Sidorov, Yu. G.</creatorcontrib><creatorcontrib>Shwets, V. A.</creatorcontrib><creatorcontrib>Varavin, V. S.</creatorcontrib><title>Formation of Acceptor Centers in CdHgTe as a Result of Water and Heat Treatments</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The influence of deionized water and heat treatments of samples of epitaxial Cd
x
Hg
1 −
x
Te films on the Hall and ellipsometric parameters is investigated. Water treatment reduces the refractive index of natural Cd
x
Hg
1 −
x
Te oxide from 2.1 to 1.2–1.4. This means that a substance with a low refractive index, such as water, is introduced into the oxide. Boiling in water leads to the formation of acceptors with concentrations of up to 10
19
cm
–3
in Cd
x
Hg
1 −
x
Te. Changing the acidity of the medium from alkaline to acidic decelerates the formation of acceptors. Heat treatments after holding in water also lead to the formation of acceptors. It is concluded that an aqueous medium, including water that is absorbed by the natural oxide layer, leads to the formation of acceptors in Cd
x
Hg
1 −
x
Te. The acceptor concentration increases with the temperature of treatments and the amount of available water.</description><subject>Aqueous solutions</subject><subject>Deceleration</subject><subject>Deionization</subject><subject>Epitaxy</subject><subject>Heat treatment</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Purification</subject><subject>Refractivity</subject><subject>Water</subject><subject>Water treatment</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp1kN9LwzAQx4soOKd_gG8BnzvzO-3jKM4JA0UnPpY0vYyONZlJ9-B_b0oFH0QO7sJ9v5_ccVl2S_CCEMbv3wiWTBVUUoI5JkqcZTOCS5xLrsrz8S1ZPuqX2VWMe4wJKQSfZS8rH3o9dN4hb9HSGDgOPqAK3AAhos6hql3vtoB0RBq9QjwdhtH5oZOOtGvRGvSAtiHlPkHxOruw-hDh5qfOs_fVw7Za55vnx6dquckNw2rIGTakkEaAUrJpZEMbKXnZNEUJrUkSBc0twVYqggvRGlZoLhsjQVrLKOVsnt1N_x6D_zxBHOq9PwWXRtZUciKEUIwl12Jy7fQB6s5ZPwRtUrTQd8Y7sF3qL2WpCiIkFgkgE2CCjzGArY-h63X4qgmux0vXfy6dGDoxMXndDsLvKv9D33nYfY0</recordid><startdate>20210501</startdate><enddate>20210501</enddate><creator>Sidorov, G. Yu</creator><creator>Sidorov, Yu. G.</creator><creator>Shwets, V. A.</creator><creator>Varavin, V. S.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20210501</creationdate><title>Formation of Acceptor Centers in CdHgTe as a Result of Water and Heat Treatments</title><author>Sidorov, G. Yu ; Sidorov, Yu. G. ; Shwets, V. A. ; Varavin, V. S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c307t-30c186c5e776bb6b2b6649bb89edcc182ea4f10f671085dc38a46bc6e6ff32243</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Aqueous solutions</topic><topic>Deceleration</topic><topic>Deionization</topic><topic>Epitaxy</topic><topic>Heat treatment</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Purification</topic><topic>Refractivity</topic><topic>Water</topic><topic>Water treatment</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sidorov, G. Yu</creatorcontrib><creatorcontrib>Sidorov, Yu. G.</creatorcontrib><creatorcontrib>Shwets, V. A.</creatorcontrib><creatorcontrib>Varavin, V. S.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sidorov, G. Yu</au><au>Sidorov, Yu. G.</au><au>Shwets, V. A.</au><au>Varavin, V. S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Formation of Acceptor Centers in CdHgTe as a Result of Water and Heat Treatments</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2021-05-01</date><risdate>2021</risdate><volume>55</volume><issue>5</issue><spage>461</spage><epage>465</epage><pages>461-465</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The influence of deionized water and heat treatments of samples of epitaxial Cd
x
Hg
1 −
x
Te films on the Hall and ellipsometric parameters is investigated. Water treatment reduces the refractive index of natural Cd
x
Hg
1 −
x
Te oxide from 2.1 to 1.2–1.4. This means that a substance with a low refractive index, such as water, is introduced into the oxide. Boiling in water leads to the formation of acceptors with concentrations of up to 10
19
cm
–3
in Cd
x
Hg
1 −
x
Te. Changing the acidity of the medium from alkaline to acidic decelerates the formation of acceptors. Heat treatments after holding in water also lead to the formation of acceptors. It is concluded that an aqueous medium, including water that is absorbed by the natural oxide layer, leads to the formation of acceptors in Cd
x
Hg
1 −
x
Te. The acceptor concentration increases with the temperature of treatments and the amount of available water.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782621040175</doi><tpages>5</tpages></addata></record> |
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| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 2021-05, Vol.55 (5), p.461-465 |
| issn | 1063-7826 1090-6479 |
| language | eng |
| recordid | cdi_proquest_journals_2641555733 |
| source | SpringerLink Journals - AutoHoldings |
| subjects | Aqueous solutions Deceleration Deionization Epitaxy Heat treatment Magnetic Materials Magnetism Physics Physics and Astronomy Purification Refractivity Water Water treatment |
| title | Formation of Acceptor Centers in CdHgTe as a Result of Water and Heat Treatments |
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