Influence of AlN spacer and GaN cap layer in GaN heterostructure for RF HEMT applications

The influence of GaN cap layer and AlN spacer layer on mobility, carrier concentration, bandgap, crystal structure, inherent strain and stress is investigated for three widely used GaN heterostructure viz. Al0.3Ga0.7N/GaN, Al0.3Ga0.7N/AlN/GaN and GaN/Al0.3Ga0.7N/AlN/GaN on 6H-SiC substrate. The grow...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Microelectronic engineering 2022-02, Vol.255, p.111724, Article 111724
Hauptverfasser: Kaneriya, R.K., Karmakar, Chiranjit, Rastogi, Gunjan, Patel, M.R., Upadhyay, R.B., Kumar, Punam, Bhattacharya, A.N.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page 111724
container_title Microelectronic engineering
container_volume 255
creator Kaneriya, R.K.
Karmakar, Chiranjit
Rastogi, Gunjan
Patel, M.R.
Upadhyay, R.B.
Kumar, Punam
Bhattacharya, A.N.
description The influence of GaN cap layer and AlN spacer layer on mobility, carrier concentration, bandgap, crystal structure, inherent strain and stress is investigated for three widely used GaN heterostructure viz. Al0.3Ga0.7N/GaN, Al0.3Ga0.7N/AlN/GaN and GaN/Al0.3Ga0.7N/AlN/GaN on 6H-SiC substrate. The growth process is kept identical with less than 1% standard deviation for all three samples in order to investigate the true effect of GaN cap and AlN spacer layers on heterostructure properties. The GaN heterostructure properties have been extensively studied by Hall measurement, high-resolution x-ray diffraction, Raman and photoluminescence spectroscopy. The interdependency among structural, mechanical, electrical and optical properties of GaN heterostructure due to incorporation of AlN space and GaN cap layer is established. Furthermore, presented characterization results for all three heterostructures are identical with semiconductor device physics-based simulation. The carrier mobility and concentration were found least in conventional AlGaN/GaN heterostructure. It has been observed a pronounced increase of inherent tensile stress and carrier concentration by introducing AlN spacer layer between AlGaN and GaN, whereas carrier mobility increased by employing GaN cap layer on the top of the heterostructure. [Display omitted] •Investigate and correlate the influence of GaN cap layer and AlN spacer layer on GaN heterostructure properties.•Interdependency among structural, mechanical, electrical and optical properties of GaN heterostructure is established.•Presented results are supported by semiconductor device physics based simulation.
doi_str_mv 10.1016/j.mee.2022.111724
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2641053152</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0167931722000181</els_id><sourcerecordid>2641053152</sourcerecordid><originalsourceid>FETCH-LOGICAL-c325t-937afc95b2805d4e753edb7a60c87ad76ab4785ea9810fc17bc82590cf32ba773</originalsourceid><addsrcrecordid>eNp9kFFLwzAUhYMoOKc_wLeAz61J2jQpPo0xt8GcIPPBp5CmN9jStTVphf17M-uzT5d7OOfew4fQPSUxJTR7rOMjQMwIYzGlVLD0As2oFEnEeSYv0Sx4RJQnVFyjG-9rEvaUyBn62La2GaE1gDuLF80e-14bcFi3JV7rPTa6x40-BaVqf4VPGMB1fnCjGUYH2HYOvz3jzerlgHXfN5XRQ9W1_hZdWd14uPubc_T-vDosN9Hudb1dLnaRSRgfQiehrcl5wSThZQqCJ1AWQmfESKFLkekiFZKDziUl1lBRGMl4ToxNWKGFSOboYbrbu-5rBD-ouhtdG14qlqWU8IRyFlx0cpnQ3TuwqnfVUbuTokSdCapaBYLqTFBNBEPmacpAqP9dgVPeVGdUZeXADKrsqn_SPwVddzU</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2641053152</pqid></control><display><type>article</type><title>Influence of AlN spacer and GaN cap layer in GaN heterostructure for RF HEMT applications</title><source>Access via ScienceDirect (Elsevier)</source><creator>Kaneriya, R.K. ; Karmakar, Chiranjit ; Rastogi, Gunjan ; Patel, M.R. ; Upadhyay, R.B. ; Kumar, Punam ; Bhattacharya, A.N.</creator><creatorcontrib>Kaneriya, R.K. ; Karmakar, Chiranjit ; Rastogi, Gunjan ; Patel, M.R. ; Upadhyay, R.B. ; Kumar, Punam ; Bhattacharya, A.N.</creatorcontrib><description>The influence of GaN cap layer and AlN spacer layer on mobility, carrier concentration, bandgap, crystal structure, inherent strain and stress is investigated for three widely used GaN heterostructure viz. Al0.3Ga0.7N/GaN, Al0.3Ga0.7N/AlN/GaN and GaN/Al0.3Ga0.7N/AlN/GaN on 6H-SiC substrate. The growth process is kept identical with less than 1% standard deviation for all three samples in order to investigate the true effect of GaN cap and AlN spacer layers on heterostructure properties. The GaN heterostructure properties have been extensively studied by Hall measurement, high-resolution x-ray diffraction, Raman and photoluminescence spectroscopy. The interdependency among structural, mechanical, electrical and optical properties of GaN heterostructure due to incorporation of AlN space and GaN cap layer is established. Furthermore, presented characterization results for all three heterostructures are identical with semiconductor device physics-based simulation. The carrier mobility and concentration were found least in conventional AlGaN/GaN heterostructure. It has been observed a pronounced increase of inherent tensile stress and carrier concentration by introducing AlN spacer layer between AlGaN and GaN, whereas carrier mobility increased by employing GaN cap layer on the top of the heterostructure. [Display omitted] •Investigate and correlate the influence of GaN cap layer and AlN spacer layer on GaN heterostructure properties.•Interdependency among structural, mechanical, electrical and optical properties of GaN heterostructure is established.•Presented results are supported by semiconductor device physics based simulation.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/j.mee.2022.111724</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>AlN spacer ; Aluminum gallium nitrides ; Aluminum nitride ; Carrier density ; Carrier mobility ; Crystal structure ; Diffraction ; Gallium nitride epitaxy ; Gallium nitrides ; GaN cap ; GaN heterostructure ; Hall effect ; Heterostructures ; Inherent strain and stress ; Mechanical properties ; Optical properties ; Photoluminescence ; Semiconductor devices ; Silicon substrates ; Strain analysis ; Stress concentration ; Substrates ; Tensile stress</subject><ispartof>Microelectronic engineering, 2022-02, Vol.255, p.111724, Article 111724</ispartof><rights>2022 Elsevier B.V.</rights><rights>Copyright Elsevier BV Feb 1, 2022</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c325t-937afc95b2805d4e753edb7a60c87ad76ab4785ea9810fc17bc82590cf32ba773</citedby><cites>FETCH-LOGICAL-c325t-937afc95b2805d4e753edb7a60c87ad76ab4785ea9810fc17bc82590cf32ba773</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.mee.2022.111724$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Kaneriya, R.K.</creatorcontrib><creatorcontrib>Karmakar, Chiranjit</creatorcontrib><creatorcontrib>Rastogi, Gunjan</creatorcontrib><creatorcontrib>Patel, M.R.</creatorcontrib><creatorcontrib>Upadhyay, R.B.</creatorcontrib><creatorcontrib>Kumar, Punam</creatorcontrib><creatorcontrib>Bhattacharya, A.N.</creatorcontrib><title>Influence of AlN spacer and GaN cap layer in GaN heterostructure for RF HEMT applications</title><title>Microelectronic engineering</title><description>The influence of GaN cap layer and AlN spacer layer on mobility, carrier concentration, bandgap, crystal structure, inherent strain and stress is investigated for three widely used GaN heterostructure viz. Al0.3Ga0.7N/GaN, Al0.3Ga0.7N/AlN/GaN and GaN/Al0.3Ga0.7N/AlN/GaN on 6H-SiC substrate. The growth process is kept identical with less than 1% standard deviation for all three samples in order to investigate the true effect of GaN cap and AlN spacer layers on heterostructure properties. The GaN heterostructure properties have been extensively studied by Hall measurement, high-resolution x-ray diffraction, Raman and photoluminescence spectroscopy. The interdependency among structural, mechanical, electrical and optical properties of GaN heterostructure due to incorporation of AlN space and GaN cap layer is established. Furthermore, presented characterization results for all three heterostructures are identical with semiconductor device physics-based simulation. The carrier mobility and concentration were found least in conventional AlGaN/GaN heterostructure. It has been observed a pronounced increase of inherent tensile stress and carrier concentration by introducing AlN spacer layer between AlGaN and GaN, whereas carrier mobility increased by employing GaN cap layer on the top of the heterostructure. [Display omitted] •Investigate and correlate the influence of GaN cap layer and AlN spacer layer on GaN heterostructure properties.•Interdependency among structural, mechanical, electrical and optical properties of GaN heterostructure is established.•Presented results are supported by semiconductor device physics based simulation.</description><subject>AlN spacer</subject><subject>Aluminum gallium nitrides</subject><subject>Aluminum nitride</subject><subject>Carrier density</subject><subject>Carrier mobility</subject><subject>Crystal structure</subject><subject>Diffraction</subject><subject>Gallium nitride epitaxy</subject><subject>Gallium nitrides</subject><subject>GaN cap</subject><subject>GaN heterostructure</subject><subject>Hall effect</subject><subject>Heterostructures</subject><subject>Inherent strain and stress</subject><subject>Mechanical properties</subject><subject>Optical properties</subject><subject>Photoluminescence</subject><subject>Semiconductor devices</subject><subject>Silicon substrates</subject><subject>Strain analysis</subject><subject>Stress concentration</subject><subject>Substrates</subject><subject>Tensile stress</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp9kFFLwzAUhYMoOKc_wLeAz61J2jQpPo0xt8GcIPPBp5CmN9jStTVphf17M-uzT5d7OOfew4fQPSUxJTR7rOMjQMwIYzGlVLD0As2oFEnEeSYv0Sx4RJQnVFyjG-9rEvaUyBn62La2GaE1gDuLF80e-14bcFi3JV7rPTa6x40-BaVqf4VPGMB1fnCjGUYH2HYOvz3jzerlgHXfN5XRQ9W1_hZdWd14uPubc_T-vDosN9Hudb1dLnaRSRgfQiehrcl5wSThZQqCJ1AWQmfESKFLkekiFZKDziUl1lBRGMl4ToxNWKGFSOboYbrbu-5rBD-ouhtdG14qlqWU8IRyFlx0cpnQ3TuwqnfVUbuTokSdCapaBYLqTFBNBEPmacpAqP9dgVPeVGdUZeXADKrsqn_SPwVddzU</recordid><startdate>20220201</startdate><enddate>20220201</enddate><creator>Kaneriya, R.K.</creator><creator>Karmakar, Chiranjit</creator><creator>Rastogi, Gunjan</creator><creator>Patel, M.R.</creator><creator>Upadhyay, R.B.</creator><creator>Kumar, Punam</creator><creator>Bhattacharya, A.N.</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20220201</creationdate><title>Influence of AlN spacer and GaN cap layer in GaN heterostructure for RF HEMT applications</title><author>Kaneriya, R.K. ; Karmakar, Chiranjit ; Rastogi, Gunjan ; Patel, M.R. ; Upadhyay, R.B. ; Kumar, Punam ; Bhattacharya, A.N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c325t-937afc95b2805d4e753edb7a60c87ad76ab4785ea9810fc17bc82590cf32ba773</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>AlN spacer</topic><topic>Aluminum gallium nitrides</topic><topic>Aluminum nitride</topic><topic>Carrier density</topic><topic>Carrier mobility</topic><topic>Crystal structure</topic><topic>Diffraction</topic><topic>Gallium nitride epitaxy</topic><topic>Gallium nitrides</topic><topic>GaN cap</topic><topic>GaN heterostructure</topic><topic>Hall effect</topic><topic>Heterostructures</topic><topic>Inherent strain and stress</topic><topic>Mechanical properties</topic><topic>Optical properties</topic><topic>Photoluminescence</topic><topic>Semiconductor devices</topic><topic>Silicon substrates</topic><topic>Strain analysis</topic><topic>Stress concentration</topic><topic>Substrates</topic><topic>Tensile stress</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kaneriya, R.K.</creatorcontrib><creatorcontrib>Karmakar, Chiranjit</creatorcontrib><creatorcontrib>Rastogi, Gunjan</creatorcontrib><creatorcontrib>Patel, M.R.</creatorcontrib><creatorcontrib>Upadhyay, R.B.</creatorcontrib><creatorcontrib>Kumar, Punam</creatorcontrib><creatorcontrib>Bhattacharya, A.N.</creatorcontrib><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kaneriya, R.K.</au><au>Karmakar, Chiranjit</au><au>Rastogi, Gunjan</au><au>Patel, M.R.</au><au>Upadhyay, R.B.</au><au>Kumar, Punam</au><au>Bhattacharya, A.N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of AlN spacer and GaN cap layer in GaN heterostructure for RF HEMT applications</atitle><jtitle>Microelectronic engineering</jtitle><date>2022-02-01</date><risdate>2022</risdate><volume>255</volume><spage>111724</spage><pages>111724-</pages><artnum>111724</artnum><issn>0167-9317</issn><eissn>1873-5568</eissn><abstract>The influence of GaN cap layer and AlN spacer layer on mobility, carrier concentration, bandgap, crystal structure, inherent strain and stress is investigated for three widely used GaN heterostructure viz. Al0.3Ga0.7N/GaN, Al0.3Ga0.7N/AlN/GaN and GaN/Al0.3Ga0.7N/AlN/GaN on 6H-SiC substrate. The growth process is kept identical with less than 1% standard deviation for all three samples in order to investigate the true effect of GaN cap and AlN spacer layers on heterostructure properties. The GaN heterostructure properties have been extensively studied by Hall measurement, high-resolution x-ray diffraction, Raman and photoluminescence spectroscopy. The interdependency among structural, mechanical, electrical and optical properties of GaN heterostructure due to incorporation of AlN space and GaN cap layer is established. Furthermore, presented characterization results for all three heterostructures are identical with semiconductor device physics-based simulation. The carrier mobility and concentration were found least in conventional AlGaN/GaN heterostructure. It has been observed a pronounced increase of inherent tensile stress and carrier concentration by introducing AlN spacer layer between AlGaN and GaN, whereas carrier mobility increased by employing GaN cap layer on the top of the heterostructure. [Display omitted] •Investigate and correlate the influence of GaN cap layer and AlN spacer layer on GaN heterostructure properties.•Interdependency among structural, mechanical, electrical and optical properties of GaN heterostructure is established.•Presented results are supported by semiconductor device physics based simulation.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.mee.2022.111724</doi></addata></record>
fulltext fulltext
identifier ISSN: 0167-9317
ispartof Microelectronic engineering, 2022-02, Vol.255, p.111724, Article 111724
issn 0167-9317
1873-5568
language eng
recordid cdi_proquest_journals_2641053152
source Access via ScienceDirect (Elsevier)
subjects AlN spacer
Aluminum gallium nitrides
Aluminum nitride
Carrier density
Carrier mobility
Crystal structure
Diffraction
Gallium nitride epitaxy
Gallium nitrides
GaN cap
GaN heterostructure
Hall effect
Heterostructures
Inherent strain and stress
Mechanical properties
Optical properties
Photoluminescence
Semiconductor devices
Silicon substrates
Strain analysis
Stress concentration
Substrates
Tensile stress
title Influence of AlN spacer and GaN cap layer in GaN heterostructure for RF HEMT applications
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T21%3A53%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Influence%20of%20AlN%20spacer%20and%20GaN%20cap%20layer%20in%20GaN%20heterostructure%20for%20RF%20HEMT%20applications&rft.jtitle=Microelectronic%20engineering&rft.au=Kaneriya,%20R.K.&rft.date=2022-02-01&rft.volume=255&rft.spage=111724&rft.pages=111724-&rft.artnum=111724&rft.issn=0167-9317&rft.eissn=1873-5568&rft_id=info:doi/10.1016/j.mee.2022.111724&rft_dat=%3Cproquest_cross%3E2641053152%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2641053152&rft_id=info:pmid/&rft_els_id=S0167931722000181&rfr_iscdi=true