Electronic Structure of Thermally Oxidized Tungsten
The electronic structure of a pure tungsten surface oxidized at an oxygen pressure of 1 Torr and a temperature of 1000 K has been in situ studied by photoelectron spectroscopy in ultrahigh vacuum. Photoemission spectra from the valence band and O 1 s , O 2 s , and W 4 f core levels at synchrotron e...
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| Veröffentlicht in: | Physics of the solid state 2021-08, Vol.63 (8), p.1153-1158 |
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| container_end_page | 1158 |
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| container_issue | 8 |
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| container_title | Physics of the solid state |
| container_volume | 63 |
| creator | Dementev, P. A. Dementeva, E. V. Lapushkin, M. N. Smirnov, D. A. Timoshnev, S. N. |
| description | The electronic structure of a pure tungsten surface oxidized at an oxygen pressure of 1 Torr and a temperature of 1000 K has been in situ studied by photoelectron spectroscopy in ultrahigh vacuum. Photoemission spectra from the valence band and O 1
s
, O 2
s
, and W 4
f
core levels at synchrotron excitation in the photon energy range of 80–600 eV have been analyzed. A semiconductor tungsten oxide film is found to form, which contains different oxides of tungsten with the oxidation state from 6+ to 4+. Oxides of tungsten with the oxidation state of 6+ are mainly formed on the surface; their fraction gradually decreases while moving away from the surface, while the amount of oxides of tungsten with the oxidation state of 4+ increases. |
| doi_str_mv | 10.1134/S1063783421080072 |
| format | Article |
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s
, O 2
s
, and W 4
f
core levels at synchrotron excitation in the photon energy range of 80–600 eV have been analyzed. A semiconductor tungsten oxide film is found to form, which contains different oxides of tungsten with the oxidation state from 6+ to 4+. Oxides of tungsten with the oxidation state of 6+ are mainly formed on the surface; their fraction gradually decreases while moving away from the surface, while the amount of oxides of tungsten with the oxidation state of 4+ increases.</description><identifier>ISSN: 1063-7834</identifier><identifier>EISSN: 1090-6460</identifier><identifier>DOI: 10.1134/S1063783421080072</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Electronic structure ; Electrons ; Oxidation ; Oxide coatings ; Oxides ; Photoelectric emission ; Photoelectrons ; Physics ; Physics and Astronomy ; Solid State Physics ; Spectrum analysis ; Synchrotrons ; Tungsten ; Tungsten compounds ; Ultrahigh vacuum ; Valence ; Valence band</subject><ispartof>Physics of the solid state, 2021-08, Vol.63 (8), p.1153-1158</ispartof><rights>Pleiades Publishing, Ltd. 2021. ISSN 1063-7834, Physics of the Solid State, 2021, Vol. 63, No. 8, pp. 1153–1158. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7834, Physics of the Solid State, 2021. © Pleiades Publishing, Ltd., 2021. Russian Text © The Author(s), 2021, published in Fizika Tverdogo Tela, 2021, Vol. 63, No. 8, pp. 1166–1171.</rights><rights>COPYRIGHT 2021 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c341t-28305616e2be2fab67d5d11aae63384a4eb5a34c606b53e801453a8d124b3fb63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063783421080072$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063783421080072$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Dementev, P. A.</creatorcontrib><creatorcontrib>Dementeva, E. V.</creatorcontrib><creatorcontrib>Lapushkin, M. N.</creatorcontrib><creatorcontrib>Smirnov, D. A.</creatorcontrib><creatorcontrib>Timoshnev, S. N.</creatorcontrib><title>Electronic Structure of Thermally Oxidized Tungsten</title><title>Physics of the solid state</title><addtitle>Phys. Solid State</addtitle><description>The electronic structure of a pure tungsten surface oxidized at an oxygen pressure of 1 Torr and a temperature of 1000 K has been in situ studied by photoelectron spectroscopy in ultrahigh vacuum. Photoemission spectra from the valence band and O 1
s
, O 2
s
, and W 4
f
core levels at synchrotron excitation in the photon energy range of 80–600 eV have been analyzed. A semiconductor tungsten oxide film is found to form, which contains different oxides of tungsten with the oxidation state from 6+ to 4+. Oxides of tungsten with the oxidation state of 6+ are mainly formed on the surface; their fraction gradually decreases while moving away from the surface, while the amount of oxides of tungsten with the oxidation state of 4+ increases.</description><subject>Electronic structure</subject><subject>Electrons</subject><subject>Oxidation</subject><subject>Oxide coatings</subject><subject>Oxides</subject><subject>Photoelectric emission</subject><subject>Photoelectrons</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Solid State Physics</subject><subject>Spectrum analysis</subject><subject>Synchrotrons</subject><subject>Tungsten</subject><subject>Tungsten compounds</subject><subject>Ultrahigh vacuum</subject><subject>Valence</subject><subject>Valence band</subject><issn>1063-7834</issn><issn>1090-6460</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp1kFFLwzAQgIsoOKc_wLeCTz505pI0bR_HmDoYDNx8Dml6rR1dO5MUNn-9GRVkiNzDHXfflxwXBPdAJgCMP62BCJakjFMgKSEJvQhGQDISCS7I5akWLDrNr4Mba7eEAECcjQI2b1A707W1DtfO9Nr1BsOuDDcfaHaqaY7h6lAX9RcW4aZvK-uwvQ2uStVYvPvJ4-D9eb6ZvUbL1ctiNl1GmnFwEU0ZiQUIpDnSUuUiKeICQCkUjKVcccxjxbgWROQxw5QAj5lKC6A8Z2Uu2Dh4GN7dm-6zR-vktutN67-UVHAgMQiaeGoyUJVqUNZt2TmjtI8Cd7XuWixr35-KLBGUZmnqhcczwTMOD65SvbVysX47Z2FgtemsNVjKval3yhwlEHk6vPxzeO_QwbGebSs0v2v_L30DXZ-ByQ</recordid><startdate>20210801</startdate><enddate>20210801</enddate><creator>Dementev, P. A.</creator><creator>Dementeva, E. V.</creator><creator>Lapushkin, M. N.</creator><creator>Smirnov, D. A.</creator><creator>Timoshnev, S. N.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>ISR</scope></search><sort><creationdate>20210801</creationdate><title>Electronic Structure of Thermally Oxidized Tungsten</title><author>Dementev, P. A. ; Dementeva, E. V. ; Lapushkin, M. N. ; Smirnov, D. A. ; Timoshnev, S. N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c341t-28305616e2be2fab67d5d11aae63384a4eb5a34c606b53e801453a8d124b3fb63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Electronic structure</topic><topic>Electrons</topic><topic>Oxidation</topic><topic>Oxide coatings</topic><topic>Oxides</topic><topic>Photoelectric emission</topic><topic>Photoelectrons</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Solid State Physics</topic><topic>Spectrum analysis</topic><topic>Synchrotrons</topic><topic>Tungsten</topic><topic>Tungsten compounds</topic><topic>Ultrahigh vacuum</topic><topic>Valence</topic><topic>Valence band</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dementev, P. A.</creatorcontrib><creatorcontrib>Dementeva, E. V.</creatorcontrib><creatorcontrib>Lapushkin, M. N.</creatorcontrib><creatorcontrib>Smirnov, D. A.</creatorcontrib><creatorcontrib>Timoshnev, S. N.</creatorcontrib><collection>CrossRef</collection><collection>Gale In Context: Science</collection><jtitle>Physics of the solid state</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Dementev, P. A.</au><au>Dementeva, E. V.</au><au>Lapushkin, M. N.</au><au>Smirnov, D. A.</au><au>Timoshnev, S. N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electronic Structure of Thermally Oxidized Tungsten</atitle><jtitle>Physics of the solid state</jtitle><stitle>Phys. Solid State</stitle><date>2021-08-01</date><risdate>2021</risdate><volume>63</volume><issue>8</issue><spage>1153</spage><epage>1158</epage><pages>1153-1158</pages><issn>1063-7834</issn><eissn>1090-6460</eissn><abstract>The electronic structure of a pure tungsten surface oxidized at an oxygen pressure of 1 Torr and a temperature of 1000 K has been in situ studied by photoelectron spectroscopy in ultrahigh vacuum. Photoemission spectra from the valence band and O 1
s
, O 2
s
, and W 4
f
core levels at synchrotron excitation in the photon energy range of 80–600 eV have been analyzed. A semiconductor tungsten oxide film is found to form, which contains different oxides of tungsten with the oxidation state from 6+ to 4+. Oxides of tungsten with the oxidation state of 6+ are mainly formed on the surface; their fraction gradually decreases while moving away from the surface, while the amount of oxides of tungsten with the oxidation state of 4+ increases.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063783421080072</doi><tpages>6</tpages></addata></record> |
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| subjects | Electronic structure Electrons Oxidation Oxide coatings Oxides Photoelectric emission Photoelectrons Physics Physics and Astronomy Solid State Physics Spectrum analysis Synchrotrons Tungsten Tungsten compounds Ultrahigh vacuum Valence Valence band |
| title | Electronic Structure of Thermally Oxidized Tungsten |
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