High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures
The design and fabrication technology of high-power Schottky-barrier microwave mesa photodiodes from 10 to 40 μm in diameter back-illuminated through the substrate are described. The diodes were made on MBE-grown InAlAs/InGaAs/InP heterostructures. The operating frequency of photodiodes 10 μm in dia...
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| Veröffentlicht in: | Technical physics 2021-09, Vol.66 (9), p.1072-1077 |
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| creator | Zhuravlev, K. S. Gilinsky, A. M. Chistokhin, I. B. Valisheva, N. A. Dmitriev, D. V. Toropov, A. I. Aksenov, M. S. Chizh, A. L. Mikitchuk, K. B. |
| description | The design and fabrication technology of high-power Schottky-barrier microwave mesa photodiodes from 10 to 40 μm in diameter back-illuminated through the substrate are described. The diodes were made on MBE-grown InAlAs/InGaAs/InP heterostructures. The operating frequency of photodiodes 10 μm in diameter has been found to be 40 GHz, and the maximal microwave output at 20 GHz for photodiodes 15 μm in diameter have been found to reach 58 mW. The coefficient of amplitude-to-phase conversion has been determined to be 1.5 rad/W. This value outperforms the available literature data and makes the given design of photodiodes promising for systems of analog microwave signal generation and transmission, which are very sensitive to phase noise. |
| doi_str_mv | 10.1134/S1063784221070185 |
| format | Article |
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S. ; Gilinsky, A. M. ; Chistokhin, I. B. ; Valisheva, N. A. ; Dmitriev, D. V. ; Toropov, A. I. ; Aksenov, M. S. ; Chizh, A. L. ; Mikitchuk, K. B.</creator><creatorcontrib>Zhuravlev, K. S. ; Gilinsky, A. M. ; Chistokhin, I. B. ; Valisheva, N. A. ; Dmitriev, D. V. ; Toropov, A. I. ; Aksenov, M. S. ; Chizh, A. L. ; Mikitchuk, K. B.</creatorcontrib><description>The design and fabrication technology of high-power Schottky-barrier microwave mesa photodiodes from 10 to 40 μm in diameter back-illuminated through the substrate are described. The diodes were made on MBE-grown InAlAs/InGaAs/InP heterostructures. The operating frequency of photodiodes 10 μm in diameter has been found to be 40 GHz, and the maximal microwave output at 20 GHz for photodiodes 15 μm in diameter have been found to reach 58 mW. The coefficient of amplitude-to-phase conversion has been determined to be 1.5 rad/W. This value outperforms the available literature data and makes the given design of photodiodes promising for systems of analog microwave signal generation and transmission, which are very sensitive to phase noise.</description><identifier>ISSN: 1063-7842</identifier><identifier>EISSN: 1090-6525</identifier><identifier>DOI: 10.1134/S1063784221070185</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Classical and Continuum Physics ; Heterostructures ; High power microwaves ; Indium aluminum arsenides ; Indium gallium arsenides ; Microwave communications ; Noise sensitivity ; Photodiodes ; Physics ; Physics and Astronomy ; Signal generation ; Substrates</subject><ispartof>Technical physics, 2021-09, Vol.66 (9), p.1072-1077</ispartof><rights>Pleiades Publishing, Ltd. 2021. ISSN 1063-7842, Technical Physics, 2021, Vol. 66, No. 9, pp. 1072–1077. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7842, Technical Physics, 2021. © Pleiades Publishing, Ltd., 2021. Russian Text © The Author(s), 2021, published in Zhurnal Tekhnicheskoi Fiziki, 2021, Vol. 91, No. 7, pp. 1158–1163.</rights><rights>COPYRIGHT 2021 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-14607bf41fe94a09217ce43cdd3169f4cca3d43e9c4e69ea6ef491ed535c60d23</citedby><cites>FETCH-LOGICAL-c355t-14607bf41fe94a09217ce43cdd3169f4cca3d43e9c4e69ea6ef491ed535c60d23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063784221070185$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063784221070185$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27923,27924,41487,42556,51318</link.rule.ids></links><search><creatorcontrib>Zhuravlev, K. 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The operating frequency of photodiodes 10 μm in diameter has been found to be 40 GHz, and the maximal microwave output at 20 GHz for photodiodes 15 μm in diameter have been found to reach 58 mW. The coefficient of amplitude-to-phase conversion has been determined to be 1.5 rad/W. This value outperforms the available literature data and makes the given design of photodiodes promising for systems of analog microwave signal generation and transmission, which are very sensitive to phase noise.</description><subject>Classical and Continuum Physics</subject><subject>Heterostructures</subject><subject>High power microwaves</subject><subject>Indium aluminum arsenides</subject><subject>Indium gallium arsenides</subject><subject>Microwave communications</subject><subject>Noise sensitivity</subject><subject>Photodiodes</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Signal generation</subject><subject>Substrates</subject><issn>1063-7842</issn><issn>1090-6525</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp1kF1PwjAUhhejiYj-AO-WeD3oabuOXg6CQAKR-HG91PYMRmDFdpP47y2ZiRfG9OI0Pc9zTvNG0T2QAQDjwxcggmUjTimQjMAovYh6QCRJRErTy_NdsOTcv45uvN8RAoERveh5Xm22ydqe0MWrSjt7Up8Yr7e2saayBn08Vh5NbOt4NZ4mswDU8aLO97kfLuqZyn08xwad9Y1rddM69LfRVan2Hu9-aj96e5y-TubJ8mm2mOTLRLM0bRLggmTvJYcSJVdEUsg0cqaNYSBkybVWzHCGUnMUEpXAkktAk7JUC2Io60cP3dyjsx8t-qbY2dbVYWVBBQfCR6kUgRp01Ebtsajq0jZO6XAMHiptayyr8J4LmQlKpYAgQCeEMLx3WBZHVx2U-yqAFOesiz9ZB4d2jg9svUH3-5X_pW9pzH8G</recordid><startdate>20210901</startdate><enddate>20210901</enddate><creator>Zhuravlev, K. 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Phys</stitle><date>2021-09-01</date><risdate>2021</risdate><volume>66</volume><issue>9</issue><spage>1072</spage><epage>1077</epage><pages>1072-1077</pages><issn>1063-7842</issn><eissn>1090-6525</eissn><abstract>The design and fabrication technology of high-power Schottky-barrier microwave mesa photodiodes from 10 to 40 μm in diameter back-illuminated through the substrate are described. The diodes were made on MBE-grown InAlAs/InGaAs/InP heterostructures. The operating frequency of photodiodes 10 μm in diameter has been found to be 40 GHz, and the maximal microwave output at 20 GHz for photodiodes 15 μm in diameter have been found to reach 58 mW. The coefficient of amplitude-to-phase conversion has been determined to be 1.5 rad/W. 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| subjects | Classical and Continuum Physics Heterostructures High power microwaves Indium aluminum arsenides Indium gallium arsenides Microwave communications Noise sensitivity Photodiodes Physics Physics and Astronomy Signal generation Substrates |
| title | High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures |
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