Single-step rapid trench filling with poly-Si using concentration dependence of deposition rate under a SiHCl3–H2 system
A single-step rapid trench filling with poly-Si was demonstrated using SiHCl3, which advantageously has a high decomposition temperature and contains an etching gas. Through elementary reaction rate analysis, we found a unique condition in which the film deposition rate decreased as the source conce...
Gespeichert in:
| Veröffentlicht in: | AIP advances 2022-03, Vol.12 (3), p.035323-035323-5 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 035323-5 |
|---|---|
| container_issue | 3 |
| container_start_page | 035323 |
| container_title | AIP advances |
| container_volume | 12 |
| creator | Yamamoto, Takanori Nakashima, Kenji Kamijo, Takuma |
| description | A single-step rapid trench filling with poly-Si was demonstrated using SiHCl3, which advantageously has a high decomposition temperature and contains an etching gas. Through elementary reaction rate analysis, we found a unique condition in which the film deposition rate decreased as the source concentration increased. This negative correlation between the concentration and deposition rate is referred to in this study as NCCR. Through cross-sectional observation, we confirmed that under the NCCR condition, the trench was filled without clogging at a rate that was 60 times faster than conventional low-pressure chemical vapor deposition. |
| doi_str_mv | 10.1063/5.0083114 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2638829004</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><doaj_id>oai_doaj_org_article_36cf57e277be40edae8f1f2e31d1f79d</doaj_id><sourcerecordid>2638829004</sourcerecordid><originalsourceid>FETCH-LOGICAL-c198f-9e7bd3c58063656b6569ef0e3d3ab332898a6d4d63349be1c94fc88ef8a3d8e03</originalsourceid><addsrcrecordid>eNp9kctKAzEUhgdRULQL3yDgSmE0l7kkSylqBcFFdR0yyUlNGSdjMlXqynfwDX0S01ZUEAyEJOf_8p_knCw7JPiU4IqdlacYc0ZIsZXtUVLynFFabf_a72ajGOc4jUIQzIu97HXqulkLeRygR0H1zqAhQKcfkHVtmzT04oYH1Pt2mU8dWsRVSPtOQzcENTjfIQM9dCbdAeTt6uSjWwtJB7RIUkAKTd1k3LKPt_cJRXGZ0j0eZDtWtRFGX-t-dn95cTee5De3V9fj85tcE8FtLqBuDNMlTz-syqpJU4DFwAxTDWOUC64qU5iKsUI0QLQorOYcLFfMcMBsP7ve-Bqv5rIP7lGFpfTKyXXAh5lUYXC6BckqbcsaaF03UGAwCrgllgIjhthamOR1tPHqg39aQBzk3C9Cl54vacU4pyKVNlHHG0oHH2MA-52VYLnqlCzlV6cSe7Jho3bDuqDf8LMPP6Dsjf0P_uv8CQaNovI</addsrcrecordid><sourcetype>Open Website</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2638829004</pqid></control><display><type>article</type><title>Single-step rapid trench filling with poly-Si using concentration dependence of deposition rate under a SiHCl3–H2 system</title><source>DOAJ Directory of Open Access Journals</source><source>Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals</source><source>Alma/SFX Local Collection</source><source>Free Full-Text Journals in Chemistry</source><creator>Yamamoto, Takanori ; Nakashima, Kenji ; Kamijo, Takuma</creator><creatorcontrib>Yamamoto, Takanori ; Nakashima, Kenji ; Kamijo, Takuma</creatorcontrib><description>A single-step rapid trench filling with poly-Si was demonstrated using SiHCl3, which advantageously has a high decomposition temperature and contains an etching gas. Through elementary reaction rate analysis, we found a unique condition in which the film deposition rate decreased as the source concentration increased. This negative correlation between the concentration and deposition rate is referred to in this study as NCCR. Through cross-sectional observation, we confirmed that under the NCCR condition, the trench was filled without clogging at a rate that was 60 times faster than conventional low-pressure chemical vapor deposition.</description><identifier>ISSN: 2158-3226</identifier><identifier>EISSN: 2158-3226</identifier><identifier>DOI: 10.1063/5.0083114</identifier><identifier>CODEN: AAIDBI</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Chemical vapor deposition ; Decomposition reactions ; Low pressure ; Polysilicon</subject><ispartof>AIP advances, 2022-03, Vol.12 (3), p.035323-035323-5</ispartof><rights>Author(s)</rights><rights>2022 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c198f-9e7bd3c58063656b6569ef0e3d3ab332898a6d4d63349be1c94fc88ef8a3d8e03</cites><orcidid>0000-0002-9839-9421</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,860,2096,27901,27902</link.rule.ids></links><search><creatorcontrib>Yamamoto, Takanori</creatorcontrib><creatorcontrib>Nakashima, Kenji</creatorcontrib><creatorcontrib>Kamijo, Takuma</creatorcontrib><title>Single-step rapid trench filling with poly-Si using concentration dependence of deposition rate under a SiHCl3–H2 system</title><title>AIP advances</title><description>A single-step rapid trench filling with poly-Si was demonstrated using SiHCl3, which advantageously has a high decomposition temperature and contains an etching gas. Through elementary reaction rate analysis, we found a unique condition in which the film deposition rate decreased as the source concentration increased. This negative correlation between the concentration and deposition rate is referred to in this study as NCCR. Through cross-sectional observation, we confirmed that under the NCCR condition, the trench was filled without clogging at a rate that was 60 times faster than conventional low-pressure chemical vapor deposition.</description><subject>Chemical vapor deposition</subject><subject>Decomposition reactions</subject><subject>Low pressure</subject><subject>Polysilicon</subject><issn>2158-3226</issn><issn>2158-3226</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>DOA</sourceid><recordid>eNp9kctKAzEUhgdRULQL3yDgSmE0l7kkSylqBcFFdR0yyUlNGSdjMlXqynfwDX0S01ZUEAyEJOf_8p_knCw7JPiU4IqdlacYc0ZIsZXtUVLynFFabf_a72ajGOc4jUIQzIu97HXqulkLeRygR0H1zqAhQKcfkHVtmzT04oYH1Pt2mU8dWsRVSPtOQzcENTjfIQM9dCbdAeTt6uSjWwtJB7RIUkAKTd1k3LKPt_cJRXGZ0j0eZDtWtRFGX-t-dn95cTee5De3V9fj85tcE8FtLqBuDNMlTz-syqpJU4DFwAxTDWOUC64qU5iKsUI0QLQorOYcLFfMcMBsP7ve-Bqv5rIP7lGFpfTKyXXAh5lUYXC6BckqbcsaaF03UGAwCrgllgIjhthamOR1tPHqg39aQBzk3C9Cl54vacU4pyKVNlHHG0oHH2MA-52VYLnqlCzlV6cSe7Jho3bDuqDf8LMPP6Dsjf0P_uv8CQaNovI</recordid><startdate>20220301</startdate><enddate>20220301</enddate><creator>Yamamoto, Takanori</creator><creator>Nakashima, Kenji</creator><creator>Kamijo, Takuma</creator><general>American Institute of Physics</general><general>AIP Publishing LLC</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0002-9839-9421</orcidid></search><sort><creationdate>20220301</creationdate><title>Single-step rapid trench filling with poly-Si using concentration dependence of deposition rate under a SiHCl3–H2 system</title><author>Yamamoto, Takanori ; Nakashima, Kenji ; Kamijo, Takuma</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c198f-9e7bd3c58063656b6569ef0e3d3ab332898a6d4d63349be1c94fc88ef8a3d8e03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Chemical vapor deposition</topic><topic>Decomposition reactions</topic><topic>Low pressure</topic><topic>Polysilicon</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yamamoto, Takanori</creatorcontrib><creatorcontrib>Nakashima, Kenji</creatorcontrib><creatorcontrib>Kamijo, Takuma</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>AIP advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yamamoto, Takanori</au><au>Nakashima, Kenji</au><au>Kamijo, Takuma</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Single-step rapid trench filling with poly-Si using concentration dependence of deposition rate under a SiHCl3–H2 system</atitle><jtitle>AIP advances</jtitle><date>2022-03-01</date><risdate>2022</risdate><volume>12</volume><issue>3</issue><spage>035323</spage><epage>035323-5</epage><pages>035323-035323-5</pages><issn>2158-3226</issn><eissn>2158-3226</eissn><coden>AAIDBI</coden><abstract>A single-step rapid trench filling with poly-Si was demonstrated using SiHCl3, which advantageously has a high decomposition temperature and contains an etching gas. Through elementary reaction rate analysis, we found a unique condition in which the film deposition rate decreased as the source concentration increased. This negative correlation between the concentration and deposition rate is referred to in this study as NCCR. Through cross-sectional observation, we confirmed that under the NCCR condition, the trench was filled without clogging at a rate that was 60 times faster than conventional low-pressure chemical vapor deposition.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0083114</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-9839-9421</orcidid><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 2158-3226 |
| ispartof | AIP advances, 2022-03, Vol.12 (3), p.035323-035323-5 |
| issn | 2158-3226 2158-3226 |
| language | eng |
| recordid | cdi_proquest_journals_2638829004 |
| source | DOAJ Directory of Open Access Journals; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; Alma/SFX Local Collection; Free Full-Text Journals in Chemistry |
| subjects | Chemical vapor deposition Decomposition reactions Low pressure Polysilicon |
| title | Single-step rapid trench filling with poly-Si using concentration dependence of deposition rate under a SiHCl3–H2 system |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-13T23%3A37%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Single-step%20rapid%20trench%20filling%20with%20poly-Si%20using%20concentration%20dependence%20of%20deposition%20rate%20under%20a%20SiHCl3%E2%80%93H2%20system&rft.jtitle=AIP%20advances&rft.au=Yamamoto,%20Takanori&rft.date=2022-03-01&rft.volume=12&rft.issue=3&rft.spage=035323&rft.epage=035323-5&rft.pages=035323-035323-5&rft.issn=2158-3226&rft.eissn=2158-3226&rft.coden=AAIDBI&rft_id=info:doi/10.1063/5.0083114&rft_dat=%3Cproquest_cross%3E2638829004%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2638829004&rft_id=info:pmid/&rft_doaj_id=oai_doaj_org_article_36cf57e277be40edae8f1f2e31d1f79d&rfr_iscdi=true |