Electronic Structure of Graphene on Silicon Carbide Intercalated with Silicon and Cobalt Atoms

The ab initio calculations have been performed for the spin-polarized band structure of graphene on silicon carbide intercalated with cobalt and silicon atoms. The cobalt and silicon atoms are shown to be localized during intercalation between the substrate and buffer layer of carbon atoms. The subs...

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Veröffentlicht in:Physics of the solid state 2021-06, Vol.63 (6), p.819-824
Hauptverfasser: Dunaevskii, S. M., Lobanova, E. Yu, Mikhailenko, E. K., Pronin, I. I.
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container_issue 6
container_start_page 819
container_title Physics of the solid state
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creator Dunaevskii, S. M.
Lobanova, E. Yu
Mikhailenko, E. K.
Pronin, I. I.
description The ab initio calculations have been performed for the spin-polarized band structure of graphene on silicon carbide intercalated with cobalt and silicon atoms. The cobalt and silicon atoms are shown to be localized during intercalation between the substrate and buffer layer of carbon atoms. The subsequent silicon intercalation and the formation of cobalt silicide lead to the transition from a strong hybridization to the formation of a quasi-free two-layer graphene on the system surface due to the transformation of the buffer layer to the second graphene layer.
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source SpringerNature Journals
subjects Buffer layers
Cobalt
Cobalt silicide
Electronic structure
Graphene
Graphite
Intercalation
Physics
Physics and Astronomy
Silicon
Silicon carbide
Solid State Physics
Substrates
title Electronic Structure of Graphene on Silicon Carbide Intercalated with Silicon and Cobalt Atoms
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