Electronic Structure of Graphene on Silicon Carbide Intercalated with Silicon and Cobalt Atoms
The ab initio calculations have been performed for the spin-polarized band structure of graphene on silicon carbide intercalated with cobalt and silicon atoms. The cobalt and silicon atoms are shown to be localized during intercalation between the substrate and buffer layer of carbon atoms. The subs...
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Veröffentlicht in: | Physics of the solid state 2021-06, Vol.63 (6), p.819-824 |
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creator | Dunaevskii, S. M. Lobanova, E. Yu Mikhailenko, E. K. Pronin, I. I. |
description | The ab initio calculations have been performed for the spin-polarized band structure of graphene on silicon carbide intercalated with cobalt and silicon atoms. The cobalt and silicon atoms are shown to be localized during intercalation between the substrate and buffer layer of carbon atoms. The subsequent silicon intercalation and the formation of cobalt silicide lead to the transition from a strong hybridization to the formation of a quasi-free two-layer graphene on the system surface due to the transformation of the buffer layer to the second graphene layer. |
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The subsequent silicon intercalation and the formation of cobalt silicide lead to the transition from a strong hybridization to the formation of a quasi-free two-layer graphene on the system surface due to the transformation of the buffer layer to the second graphene layer.</description><identifier>ISSN: 1063-7834</identifier><identifier>EISSN: 1090-6460</identifier><identifier>DOI: 10.1134/S1063783421060068</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Buffer layers ; Cobalt ; Cobalt silicide ; Electronic structure ; Graphene ; Graphite ; Intercalation ; Physics ; Physics and Astronomy ; Silicon ; Silicon carbide ; Solid State Physics ; Substrates</subject><ispartof>Physics of the solid state, 2021-06, Vol.63 (6), p.819-824</ispartof><rights>Pleiades Publishing, Ltd. 2021. ISSN 1063-7834, Physics of the Solid State, 2021, Vol. 63, No. 6, pp. 819–824. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7834, Physics of the Solid State, 2021. © Pleiades Publishing, Ltd., 2021. Russian Text © The Author(s), 2021, published in Fizika Tverdogo Tela, 2021, Vol. 63, No. 6, pp. 706–711.</rights><rights>COPYRIGHT 2021 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c341t-5496c32d452a347c6d6d90d7a750432405e20cf0ff27cc25f69a682126d1c65e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063783421060068$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063783421060068$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Dunaevskii, S. M.</creatorcontrib><creatorcontrib>Lobanova, E. 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The subsequent silicon intercalation and the formation of cobalt silicide lead to the transition from a strong hybridization to the formation of a quasi-free two-layer graphene on the system surface due to the transformation of the buffer layer to the second graphene layer.</description><subject>Buffer layers</subject><subject>Cobalt</subject><subject>Cobalt silicide</subject><subject>Electronic structure</subject><subject>Graphene</subject><subject>Graphite</subject><subject>Intercalation</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Silicon</subject><subject>Silicon carbide</subject><subject>Solid State Physics</subject><subject>Substrates</subject><issn>1063-7834</issn><issn>1090-6460</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp1kU1Lw0AQhoMoWKs_wFvAk4fU2Y9MkmMJtRYKgtWrYbsfbUqa1N0N6r93S0UpInuYl93nmR2YKLomMCKE8bsFAWRZzjgNAQDzk2hAoIAEOcLpPiNL9u_n0YVzGwBCSFoMotdJo6W3XVvLeOFtL31vddyZeGrFbq3bkNt4UTe1DLUUdlkrHc9ar60UjfBaxe-1X_8QolVx2S1F4-Ox77buMjozonH66rsOo5f7yXP5kMwfp7NyPE8k48QnKS9QMqp4SgXjmUSFqgCViSwFziiHVFOQBoyhmZQ0NVgIzCmhqIjEVLNhdHPou7PdW6-drzZdb9vwZUWR5RlCxvNAjQ7USjS6qlvTeStkOEpv9-NrU4f7MRaIOQOeBeH2SAiM1x9-JXrnqtni6ZglB1bazjmrTbWz9VbYz4pAtd9R9WdHwaEHxwW2XWn7O_b_0heZW5CK</recordid><startdate>20210601</startdate><enddate>20210601</enddate><creator>Dunaevskii, S. 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The cobalt and silicon atoms are shown to be localized during intercalation between the substrate and buffer layer of carbon atoms. The subsequent silicon intercalation and the formation of cobalt silicide lead to the transition from a strong hybridization to the formation of a quasi-free two-layer graphene on the system surface due to the transformation of the buffer layer to the second graphene layer.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063783421060068</doi><tpages>6</tpages></addata></record> |
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subjects | Buffer layers Cobalt Cobalt silicide Electronic structure Graphene Graphite Intercalation Physics Physics and Astronomy Silicon Silicon carbide Solid State Physics Substrates |
title | Electronic Structure of Graphene on Silicon Carbide Intercalated with Silicon and Cobalt Atoms |
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