Vanadium doped beta-Ga2O3 single crystals: Growth, Optical and Terahertz characterization

We report the growth of electrically-resistive vanadium-doped beta-Ga2O3 single crystals via the optical floating zone technique. By carefully controlling the growth parameters V-doped crystals with very high electrical resistivity compared to the usual n-type V-doped beta-Ga2O3 (ne~10^(18)/cm^3) ca...

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Veröffentlicht in:arXiv.org 2022-03
Hauptverfasser: Narayanan, Maneesha, Ajinkya Punjal, Hossain, Emroj, Choudhary, Shraddha, Kulkarni, Ruta, S S Prabhu Arumugam Thamizhavel, Bhattacharya, Arnab
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Sprache:eng
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