Carrier dynamics of AlGaAs/AlAs asymmetric double quantum wells with different barrier thickness

Optical properties and carrier dynamics of AlGaAs/AlAs asymmetric double quantum wells (ADQWs) with varied barrier thickness are studied by excitation-power-dependent photoluminescence (PL) and temperature-dependent time-resolved PL (TRPL) experiments. The origin of the transition energies derived f...

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Veröffentlicht in:	Optical materials express 2022-03, Vol.12 (3), p.1291
Hauptverfasser:	Liu, Yuejun, Weng, Guoen, Cao, Fuyi, Wang, Youyang, Wan, Wenjian, Wang, Chang, Nakamae, Hidekazu, Kim, Changsu, Hu, Xiaobo, Luo, Xianjia, Luo, Shuai, Chen, Shaoqiang, Chu, Junhao, Akiyama, Hidefumi
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum arsenides Aluminum gallium arsenides Asymmetry Carrier transport Electron tunneling Optical properties Photoluminescence Quantum wells Schrodinger equation Temperature dependence Thickness Time dependence
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