Radiation-doped SiC/Si heterostructure formation and defects evolution

The authors consider heterostructures of silicon carbide obtained during endotaxy on silicon substrates. The question is raised in connection with the description of the endotaxy process itself at the structural level. Authors focus on the technological aspects of the formation of a stable β-SiC/Si...

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Veröffentlicht in:	Journal of physics. Conference series 2022-01, Vol.2155 (1), p.12012
Hauptverfasser:	Chepurnov, V I, Dolgopolov, M V, Gurskaya, A V, Puzyrnaya, G V, Elkhimov, D E
Format:	Artikel
Sprache:	eng
Schlagworte:	Evolution Heterostructures Physical properties Physics Point defects Radioisotopes Silicon carbide Silicon substrates
Online-Zugang:	Volltext
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