The exceptional advantages of channeling implantation into 4H-SiC to make abrupt deep profiles
We investigated the channeling implantation of dopant ions into 4H-SiC in detail. The advantages of channeling implantation were clarified by both experimental and Monte Carlo simulation. Extremely abrupt deep profile with box-like can be formed by channeling implantation of Al and P ions. In the ca...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2022-05, Vol.61 (SC), p.SC1033 |
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| container_issue | SC |
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| container_title | Japanese Journal of Applied Physics |
| container_volume | 61 |
| creator | Wada, Ryota Nagayama, Tsutomu Tokoro, Nobuhiro Kuroi, Takashi Das, Hrishikesh Sunkari, Swapna Justice, Joshua |
| description | We investigated the channeling implantation of dopant ions into 4H-SiC in detail. The advantages of channeling implantation were clarified by both experimental and Monte Carlo simulation. Extremely abrupt deep profile with box-like can be formed by channeling implantation of Al and P ions. In the case of B and N ions, retrograde-like profile can be obtained by channeling implantation. The unique dopant profile can be realized by channeling implantation. Both vertical and lateral straggling becomes small by using channeling implantation for Al ions. This technique should contribute to improving the device performance such as gate pitch scaling and low specific on-resistance. |
| doi_str_mv | 10.35848/1347-4065/ac4445 |
| format | Article |
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The advantages of channeling implantation were clarified by both experimental and Monte Carlo simulation. Extremely abrupt deep profile with box-like can be formed by channeling implantation of Al and P ions. In the case of B and N ions, retrograde-like profile can be obtained by channeling implantation. The unique dopant profile can be realized by channeling implantation. Both vertical and lateral straggling becomes small by using channeling implantation for Al ions. This technique should contribute to improving the device performance such as gate pitch scaling and low specific on-resistance.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.35848/1347-4065/ac4445</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>Tokyo: IOP Publishing</publisher><subject>4H-SiC ; abruptness ; Channeling ; Depth profiling ; Dopants ; Ion implantation ; Monte Carlo simulation ; straggling</subject><ispartof>Japanese Journal of Applied Physics, 2022-05, Vol.61 (SC), p.SC1033</ispartof><rights>2022 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c345t-fc9f31868256b623c907881e7c364a7360966214f5625fa2316a780b01fd1fe73</citedby><cites>FETCH-LOGICAL-c345t-fc9f31868256b623c907881e7c364a7360966214f5625fa2316a780b01fd1fe73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.35848/1347-4065/ac4445/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,27924,27925,53846,53893</link.rule.ids></links><search><creatorcontrib>Wada, Ryota</creatorcontrib><creatorcontrib>Nagayama, Tsutomu</creatorcontrib><creatorcontrib>Tokoro, Nobuhiro</creatorcontrib><creatorcontrib>Kuroi, Takashi</creatorcontrib><creatorcontrib>Das, Hrishikesh</creatorcontrib><creatorcontrib>Sunkari, Swapna</creatorcontrib><creatorcontrib>Justice, Joshua</creatorcontrib><title>The exceptional advantages of channeling implantation into 4H-SiC to make abrupt deep profiles</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>We investigated the channeling implantation of dopant ions into 4H-SiC in detail. The advantages of channeling implantation were clarified by both experimental and Monte Carlo simulation. Extremely abrupt deep profile with box-like can be formed by channeling implantation of Al and P ions. In the case of B and N ions, retrograde-like profile can be obtained by channeling implantation. The unique dopant profile can be realized by channeling implantation. Both vertical and lateral straggling becomes small by using channeling implantation for Al ions. This technique should contribute to improving the device performance such as gate pitch scaling and low specific on-resistance.</description><subject>4H-SiC</subject><subject>abruptness</subject><subject>Channeling</subject><subject>Depth profiling</subject><subject>Dopants</subject><subject>Ion implantation</subject><subject>Monte Carlo simulation</subject><subject>straggling</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp9kE1Lw0AQhhdRsFZ_gLcFTx7W7neSowRthYKH1qvLdrPbbkyTNZuK_nsTI3oRYWC-nplhXgAuCb5hIuXpjDCeII6lmGnDORdHYPJTOgYTjClBPKP0FJzFWPapFJxMwPN6Z6F9NzZ0vql1BXXxputOb22EjYNmp-vaVr7eQr8P1dAZOOjrroF8gVY-h3201y8W6k17CB0srA0wtI3zlY3n4MTpKtqLbz8FT_d363yBlo_zh_x2iQzjokPOZI6RVKZUyI2kzGQ4SVNiE8Mk1wmTOJOSEu6EpMJpyojUSYo3mLiCOJuwKbga9_aHXw82dqpsDm3_T1RUMtG_mrGBIiNl2ibG1joVWr_X7YciWH3JqAbN1KCZGmXsZ9A445vwu_Q__voPvix1UJKoVd4bwYypUDj2CeKfgDM</recordid><startdate>20220501</startdate><enddate>20220501</enddate><creator>Wada, Ryota</creator><creator>Nagayama, Tsutomu</creator><creator>Tokoro, Nobuhiro</creator><creator>Kuroi, Takashi</creator><creator>Das, Hrishikesh</creator><creator>Sunkari, Swapna</creator><creator>Justice, Joshua</creator><general>IOP Publishing</general><general>Japanese Journal of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20220501</creationdate><title>The exceptional advantages of channeling implantation into 4H-SiC to make abrupt deep profiles</title><author>Wada, Ryota ; Nagayama, Tsutomu ; Tokoro, Nobuhiro ; Kuroi, Takashi ; Das, Hrishikesh ; Sunkari, Swapna ; Justice, Joshua</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c345t-fc9f31868256b623c907881e7c364a7360966214f5625fa2316a780b01fd1fe73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>4H-SiC</topic><topic>abruptness</topic><topic>Channeling</topic><topic>Depth profiling</topic><topic>Dopants</topic><topic>Ion implantation</topic><topic>Monte Carlo simulation</topic><topic>straggling</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wada, Ryota</creatorcontrib><creatorcontrib>Nagayama, Tsutomu</creatorcontrib><creatorcontrib>Tokoro, Nobuhiro</creatorcontrib><creatorcontrib>Kuroi, Takashi</creatorcontrib><creatorcontrib>Das, Hrishikesh</creatorcontrib><creatorcontrib>Sunkari, Swapna</creatorcontrib><creatorcontrib>Justice, Joshua</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wada, Ryota</au><au>Nagayama, Tsutomu</au><au>Tokoro, Nobuhiro</au><au>Kuroi, Takashi</au><au>Das, Hrishikesh</au><au>Sunkari, Swapna</au><au>Justice, Joshua</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The exceptional advantages of channeling implantation into 4H-SiC to make abrupt deep profiles</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2022-05-01</date><risdate>2022</risdate><volume>61</volume><issue>SC</issue><spage>SC1033</spage><pages>SC1033-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>We investigated the channeling implantation of dopant ions into 4H-SiC in detail. The advantages of channeling implantation were clarified by both experimental and Monte Carlo simulation. Extremely abrupt deep profile with box-like can be formed by channeling implantation of Al and P ions. In the case of B and N ions, retrograde-like profile can be obtained by channeling implantation. The unique dopant profile can be realized by channeling implantation. Both vertical and lateral straggling becomes small by using channeling implantation for Al ions. 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| language | eng |
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| source | Institute of Physics Journals |
| subjects | 4H-SiC abruptness Channeling Depth profiling Dopants Ion implantation Monte Carlo simulation straggling |
| title | The exceptional advantages of channeling implantation into 4H-SiC to make abrupt deep profiles |
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