Improved passivation depth of porous fluorescent 6H-SiC with Si/C faces using atomic layer deposition

We investigated the effects of different growth facets of 6H-SiC and different voltage waveforms on the porous structure and luminescence properties. The structure formed on the surface after anodic etching significantly changed because of the difference in the growth plane, whereas dendritic and co...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2022-03, Vol.61 (3), p.35502
Hauptverfasser:	Yanai, Kosuke, Lu, Weifang, Yamane, Yoma, Kodera, Keita, Ou, Yiyu, Ou, Haiyan, Kamiyama, Satoshi, Takeuchi, Tetsuya, Iwaya, Motoaki, Akasaki, Isamu
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide anodic oxidation etching atomic layer deposition Atomic layer epitaxy Electric potential Etching Fluorescence Luminescence Optical properties passivation depth Passivity Penetration depth Photoluminescence porous fluorescent SiC Si/C-face Silicon carbide Voltage Waveforms
Online-Zugang:	Volltext
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