Growth, Optical, and Scintillation Properties of (Gd0.4Lu0.6)8Sr2(SiO4)6O2 Crystals

Non-doped and 0.1, 0.5, 1.0, and 2.0% Ce-doped (Gd0.4Lu0.6)8Sr2(SiO4)6O2 crystals were prepared and their optical and scintillation properties were investigated. Their X-ray diffraction (XRD) patterns confirmed that the Ce-doped samples did not contain an impurity phase, whereas the non-doped one co...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Sensors and materials 2022-02, Vol.34 (2), p.595
Hauptverfasser: Yanagida, Takayuki, Kato, Takumi, Nakauchi, Daisuke, Kawaguchi, Noriaki
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 2
container_start_page 595
container_title Sensors and materials
container_volume 34
creator Yanagida, Takayuki
Kato, Takumi
Nakauchi, Daisuke
Kawaguchi, Noriaki
description Non-doped and 0.1, 0.5, 1.0, and 2.0% Ce-doped (Gd0.4Lu0.6)8Sr2(SiO4)6O2 crystals were prepared and their optical and scintillation properties were investigated. Their X-ray diffraction (XRD) patterns confirmed that the Ce-doped samples did not contain an impurity phase, whereas the non-doped one contained some impurity phases such as Gd2SiO5 and Lu2SiO5. The emission due to 5d–4f transitions of Ce3+ was observed at 380–650 nm in both the photoluminescence (PL) and scintillation spectra of the Ce-doped samples. The scintillation light yields (LYs) of the 0.5 and 1.0% Ce-doped samples under 241Am α-ray irradiation were ~230 and ~620 ph/5.5 MeV-α, respectively.
doi_str_mv 10.18494/SAM3684
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2635532057</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2635532057</sourcerecordid><originalsourceid>FETCH-LOGICAL-c2704-856c61cf209b7e92d7a7e0c4b5de58444d4193567a3651c0ef7a42fdca0442593</originalsourceid><addsrcrecordid>eNotkFFLwzAUhYMoOObAnxDwZYN13iQ3afs4hk5hUqH6XLI0xY7a1CRD9u8tbk_n5eOcw0fIPYMVyzDHx3L9JlSGV2TCUcgEMpVfkwnkDBPMhbwlsxAOAMAyCYqrCSm33v3GryUthtga3S2p7mtamraPbdfp2Lqevns3WB9bG6hr6Hxbwwp3R1ipRVZ6Pi_bAheq4HTjTyHqLtyRm2YMO7vklHw-P31sXpJdsX3drHeJ4SlgkkllFDMNh3yf2pzXqU4tGNzL2soMEWtk42eVaqEkM2CbVCNvaqMBkctcTMnDuXfw7udoQ6wO7uj7cbLiSkgpOMh0pOZnyngXgrdNNfj2W_tTxaD6t1ZdrIk_rDJaig</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2635532057</pqid></control><display><type>article</type><title>Growth, Optical, and Scintillation Properties of (Gd0.4Lu0.6)8Sr2(SiO4)6O2 Crystals</title><source>DOAJ Directory of Open Access Journals</source><source>EZB-FREE-00999 freely available EZB journals</source><source>Alma/SFX Local Collection</source><creator>Yanagida, Takayuki ; Kato, Takumi ; Nakauchi, Daisuke ; Kawaguchi, Noriaki</creator><creatorcontrib>Yanagida, Takayuki ; Kato, Takumi ; Nakauchi, Daisuke ; Kawaguchi, Noriaki</creatorcontrib><description>Non-doped and 0.1, 0.5, 1.0, and 2.0% Ce-doped (Gd0.4Lu0.6)8Sr2(SiO4)6O2 crystals were prepared and their optical and scintillation properties were investigated. Their X-ray diffraction (XRD) patterns confirmed that the Ce-doped samples did not contain an impurity phase, whereas the non-doped one contained some impurity phases such as Gd2SiO5 and Lu2SiO5. The emission due to 5d–4f transitions of Ce3+ was observed at 380–650 nm in both the photoluminescence (PL) and scintillation spectra of the Ce-doped samples. The scintillation light yields (LYs) of the 0.5 and 1.0% Ce-doped samples under 241Am α-ray irradiation were ~230 and ~620 ph/5.5 MeV-α, respectively.</description><identifier>ISSN: 0914-4935</identifier><identifier>EISSN: 2435-0869</identifier><identifier>DOI: 10.18494/SAM3684</identifier><language>eng</language><publisher>Tokyo: MYU Scientific Publishing Division</publisher><subject>Alpha rays ; Cerium ; Crystals ; Diffraction patterns ; Impurities ; Optical properties ; Photoluminescence ; Scintillation</subject><ispartof>Sensors and materials, 2022-02, Vol.34 (2), p.595</ispartof><rights>Copyright MYU Scientific Publishing Division 2022</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2704-856c61cf209b7e92d7a7e0c4b5de58444d4193567a3651c0ef7a42fdca0442593</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,865,27926,27927</link.rule.ids></links><search><creatorcontrib>Yanagida, Takayuki</creatorcontrib><creatorcontrib>Kato, Takumi</creatorcontrib><creatorcontrib>Nakauchi, Daisuke</creatorcontrib><creatorcontrib>Kawaguchi, Noriaki</creatorcontrib><title>Growth, Optical, and Scintillation Properties of (Gd0.4Lu0.6)8Sr2(SiO4)6O2 Crystals</title><title>Sensors and materials</title><description>Non-doped and 0.1, 0.5, 1.0, and 2.0% Ce-doped (Gd0.4Lu0.6)8Sr2(SiO4)6O2 crystals were prepared and their optical and scintillation properties were investigated. Their X-ray diffraction (XRD) patterns confirmed that the Ce-doped samples did not contain an impurity phase, whereas the non-doped one contained some impurity phases such as Gd2SiO5 and Lu2SiO5. The emission due to 5d–4f transitions of Ce3+ was observed at 380–650 nm in both the photoluminescence (PL) and scintillation spectra of the Ce-doped samples. The scintillation light yields (LYs) of the 0.5 and 1.0% Ce-doped samples under 241Am α-ray irradiation were ~230 and ~620 ph/5.5 MeV-α, respectively.</description><subject>Alpha rays</subject><subject>Cerium</subject><subject>Crystals</subject><subject>Diffraction patterns</subject><subject>Impurities</subject><subject>Optical properties</subject><subject>Photoluminescence</subject><subject>Scintillation</subject><issn>0914-4935</issn><issn>2435-0869</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNotkFFLwzAUhYMoOObAnxDwZYN13iQ3afs4hk5hUqH6XLI0xY7a1CRD9u8tbk_n5eOcw0fIPYMVyzDHx3L9JlSGV2TCUcgEMpVfkwnkDBPMhbwlsxAOAMAyCYqrCSm33v3GryUthtga3S2p7mtamraPbdfp2Lqevns3WB9bG6hr6Hxbwwp3R1ipRVZ6Pi_bAheq4HTjTyHqLtyRm2YMO7vklHw-P31sXpJdsX3drHeJ4SlgkkllFDMNh3yf2pzXqU4tGNzL2soMEWtk42eVaqEkM2CbVCNvaqMBkctcTMnDuXfw7udoQ6wO7uj7cbLiSkgpOMh0pOZnyngXgrdNNfj2W_tTxaD6t1ZdrIk_rDJaig</recordid><startdate>20220221</startdate><enddate>20220221</enddate><creator>Yanagida, Takayuki</creator><creator>Kato, Takumi</creator><creator>Nakauchi, Daisuke</creator><creator>Kawaguchi, Noriaki</creator><general>MYU Scientific Publishing Division</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7TB</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20220221</creationdate><title>Growth, Optical, and Scintillation Properties of (Gd0.4Lu0.6)8Sr2(SiO4)6O2 Crystals</title><author>Yanagida, Takayuki ; Kato, Takumi ; Nakauchi, Daisuke ; Kawaguchi, Noriaki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2704-856c61cf209b7e92d7a7e0c4b5de58444d4193567a3651c0ef7a42fdca0442593</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Alpha rays</topic><topic>Cerium</topic><topic>Crystals</topic><topic>Diffraction patterns</topic><topic>Impurities</topic><topic>Optical properties</topic><topic>Photoluminescence</topic><topic>Scintillation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yanagida, Takayuki</creatorcontrib><creatorcontrib>Kato, Takumi</creatorcontrib><creatorcontrib>Nakauchi, Daisuke</creatorcontrib><creatorcontrib>Kawaguchi, Noriaki</creatorcontrib><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Mechanical &amp; Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Sensors and materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yanagida, Takayuki</au><au>Kato, Takumi</au><au>Nakauchi, Daisuke</au><au>Kawaguchi, Noriaki</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth, Optical, and Scintillation Properties of (Gd0.4Lu0.6)8Sr2(SiO4)6O2 Crystals</atitle><jtitle>Sensors and materials</jtitle><date>2022-02-21</date><risdate>2022</risdate><volume>34</volume><issue>2</issue><spage>595</spage><pages>595-</pages><issn>0914-4935</issn><eissn>2435-0869</eissn><abstract>Non-doped and 0.1, 0.5, 1.0, and 2.0% Ce-doped (Gd0.4Lu0.6)8Sr2(SiO4)6O2 crystals were prepared and their optical and scintillation properties were investigated. Their X-ray diffraction (XRD) patterns confirmed that the Ce-doped samples did not contain an impurity phase, whereas the non-doped one contained some impurity phases such as Gd2SiO5 and Lu2SiO5. The emission due to 5d–4f transitions of Ce3+ was observed at 380–650 nm in both the photoluminescence (PL) and scintillation spectra of the Ce-doped samples. The scintillation light yields (LYs) of the 0.5 and 1.0% Ce-doped samples under 241Am α-ray irradiation were ~230 and ~620 ph/5.5 MeV-α, respectively.</abstract><cop>Tokyo</cop><pub>MYU Scientific Publishing Division</pub><doi>10.18494/SAM3684</doi><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 0914-4935
ispartof Sensors and materials, 2022-02, Vol.34 (2), p.595
issn 0914-4935
2435-0869
language eng
recordid cdi_proquest_journals_2635532057
source DOAJ Directory of Open Access Journals; EZB-FREE-00999 freely available EZB journals; Alma/SFX Local Collection
subjects Alpha rays
Cerium
Crystals
Diffraction patterns
Impurities
Optical properties
Photoluminescence
Scintillation
title Growth, Optical, and Scintillation Properties of (Gd0.4Lu0.6)8Sr2(SiO4)6O2 Crystals
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-17T23%3A51%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Growth,%20Optical,%20and%20Scintillation%20Properties%20of%20(Gd0.4Lu0.6)8Sr2(SiO4)6O2%20Crystals&rft.jtitle=Sensors%20and%20materials&rft.au=Yanagida,%20Takayuki&rft.date=2022-02-21&rft.volume=34&rft.issue=2&rft.spage=595&rft.pages=595-&rft.issn=0914-4935&rft.eissn=2435-0869&rft_id=info:doi/10.18494/SAM3684&rft_dat=%3Cproquest_cross%3E2635532057%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2635532057&rft_id=info:pmid/&rfr_iscdi=true