Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO2/Si (MFIS) Gate Structure

We investigate the charge trapping during endurance fatigue of FeFET with TiN/Hf 0.5 Zr 0.5 O 2 /SiO 2 /Si (MFIS) gate structure. We propose a method of experimentally extracting the number of trapped charges during the memory operation, by measuring the charges in the metal gate and Si substrate. W...

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Veröffentlicht in:	IEEE transactions on electron devices 2022-03, Vol.69 (3), p.1561-1567
Hauptverfasser:	Zhao, Shujing, Tian, Fengbin, Xu, Hao, Xiang, Jinjuan, Li, Tingting, Chai, Junshuai, Duan, Jiahui, Han, Kai, Wang, Xiaolei, Wang, Wenwu, Ye, Tianchun
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge simulation Charge trapping doped HfO2 Electron traps Endurance endurance fatigue Fatigue FeFET FeFETs ferroelectric Ferroelectric materials Ferroelectricity Logic gates Q measurement Silicon Silicon dioxide Silicon substrates Trapping Zirconium
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