Simulation Study on Novel GaN‐Based n−p−n Heterojunction Bipolar Transistors with a Quaternary AlGaInN Emitter and a Two‐Dimensionally Conductive Base

Herein, a simulation study on novel GaN‐based n−p−n heterojunction bipolar transistors (HBTs) with a quaternary n‐AlGaInN emitter and a thin GaInN quantum well (QW) layer inserted in its p‐GaN base is reported. The idea of the quaternary AlGaInN emitter facilitates the design and independent growth...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2022-02, Vol.219 (4), p.n/a
Hauptverfasser:	Mase, Akira, Nikai, Yutaka, Iida, Yusuke, Egawa, Takashi, Miyoshi, Makoto
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier density Emitters Gallium nitrides Heterojunction bipolar transistors Insertion Lattice strain P-n junctions Quantum wells quaternary AlGaInN Semiconductor devices Simulation simulations Transistors two-dimensionally conductive
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