Low‐Energy UV Ultrafast Laser Controlled Lift‐Off for High‐Quality Flexible GaN‐Based Device

A one‐step laser lift‐off (LLO) for patterned gallium nitride (GaN) film and GaN‐based light‐emitting diode (LED) device is achieved using 355 nm picosecond laser irradiation in this research. The laser fluence required for separation is 0.09–0.13 J cm−2, which is much lower than that for the curren...

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Veröffentlicht in:	Advanced functional materials 2022-02, Vol.32 (8), p.n/a
Hauptverfasser:	Sun, Weigao, Ji, Lingfei, Lin, Zhenyuan, Zheng, Jincan, Wang, Zhiyong, Zhang, Litian, Yan, Tianyang
Format:	Artikel
Sprache:	eng
Schlagworte:	Electroluminescence Energy consumption flexible electronics Fluence Gallium nitrides GaN devices Holes Lasers Light emitting diodes Materials science Microcracks photochemical decomposition plasma Residual stress Sapphire ultrafast laser lift‐off Ultrafast lasers
Online-Zugang:	Volltext
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