Determination of the interface band alignment of Mg2Si/4H‐SiC heterojuction for potential photodetector application
The Mg2Si/4H‐SiC heterojunction was prepared by radio frequency (RF) magnetron sputtering technique. The binding energies of Mg 2p, Si 2p, and C 1s core levels and the maxima of valence band were measured by X‐ray photoelectron spectroscopy (XPS). Using the optical bandgap of Mg2Si (0.78 eV) and 4H‐...
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| Veröffentlicht in: | Surface and interface analysis 2022-03, Vol.54 (3), p.270-276 |
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| creator | Liao, Yangfang Xie, Jing Lv, Bing Xiao, Qingquan Xie, Quan |
| description | The Mg2Si/4H‐SiC heterojunction was prepared by radio frequency (RF) magnetron sputtering technique. The binding energies of Mg 2p, Si 2p, and C 1s core levels and the maxima of valence band were measured by X‐ray photoelectron spectroscopy (XPS). Using the optical bandgap of Mg2Si (0.78 eV) and 4H‐SiC (3.25 eV), the band offsets of valence band (VBO) and conduction band (CBO) at Mg2Si/4H‐SiC interface were identified as 1.47 and 1.00 eV, respectively. The band alignment was evaluated to be type‐I band alignment. The Mg2Si/4H‐SiC heterojunction could be a promising candidate for the infrared (IR) photodetector. |
| doi_str_mv | 10.1002/sia.7051 |
| format | Article |
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The binding energies of Mg 2p, Si 2p, and C 1s core levels and the maxima of valence band were measured by X‐ray photoelectron spectroscopy (XPS). Using the optical bandgap of Mg2Si (0.78 eV) and 4H‐SiC (3.25 eV), the band offsets of valence band (VBO) and conduction band (CBO) at Mg2Si/4H‐SiC interface were identified as 1.47 and 1.00 eV, respectively. The band alignment was evaluated to be type‐I band alignment. The Mg2Si/4H‐SiC heterojunction could be a promising candidate for the infrared (IR) photodetector.</description><identifier>ISSN: 0142-2421</identifier><identifier>EISSN: 1096-9918</identifier><identifier>DOI: 10.1002/sia.7051</identifier><language>eng</language><publisher>Bognor Regis: Wiley Subscription Services, Inc</publisher><subject>4H‐SiC ; Alignment ; band alignment ; Conduction bands ; Electrons ; heterojunction ; Heterojunctions ; Intermetallic compounds ; Magnesium compounds ; Magnetron sputtering ; Metal silicides ; Mg2Si ; Photoelectrons ; Photometers ; Radio frequency ; Valence band</subject><ispartof>Surface and interface analysis, 2022-03, Vol.54 (3), p.270-276</ispartof><rights>2021 John Wiley & Sons, Ltd.</rights><rights>2022 John Wiley & Sons, Ltd.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0002-5056-3771</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fsia.7051$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fsia.7051$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27924,27925,45574,45575</link.rule.ids></links><search><creatorcontrib>Liao, Yangfang</creatorcontrib><creatorcontrib>Xie, Jing</creatorcontrib><creatorcontrib>Lv, Bing</creatorcontrib><creatorcontrib>Xiao, Qingquan</creatorcontrib><creatorcontrib>Xie, Quan</creatorcontrib><title>Determination of the interface band alignment of Mg2Si/4H‐SiC heterojuction for potential photodetector application</title><title>Surface and interface analysis</title><description>The Mg2Si/4H‐SiC heterojunction was prepared by radio frequency (RF) magnetron sputtering technique. The binding energies of Mg 2p, Si 2p, and C 1s core levels and the maxima of valence band were measured by X‐ray photoelectron spectroscopy (XPS). Using the optical bandgap of Mg2Si (0.78 eV) and 4H‐SiC (3.25 eV), the band offsets of valence band (VBO) and conduction band (CBO) at Mg2Si/4H‐SiC interface were identified as 1.47 and 1.00 eV, respectively. The band alignment was evaluated to be type‐I band alignment. The Mg2Si/4H‐SiC heterojunction could be a promising candidate for the infrared (IR) photodetector.</description><subject>4H‐SiC</subject><subject>Alignment</subject><subject>band alignment</subject><subject>Conduction bands</subject><subject>Electrons</subject><subject>heterojunction</subject><subject>Heterojunctions</subject><subject>Intermetallic compounds</subject><subject>Magnesium compounds</subject><subject>Magnetron sputtering</subject><subject>Metal silicides</subject><subject>Mg2Si</subject><subject>Photoelectrons</subject><subject>Photometers</subject><subject>Radio frequency</subject><subject>Valence band</subject><issn>0142-2421</issn><issn>1096-9918</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNotkE1OwzAQhS0EEqUgcQRLrNOO7ThJl1X5aaUiFoW15STj1lUah8QR6o4jcEZOgtOyGs2b782THiH3DCYMgE87qycpSHZBRgxmSTSbseySjIDFPOIxZ9fkpuv2AJCJLBmR_hE9tgdba29dTZ2hfofU1kE0ukCa67qkurLb-oC1H-6vW76x03j5-_2zsQu6G_xu3xcnv3EtbZwPqNUVbXbOuzIAhQ-6bprKFqecW3JldNXh3f8ck4_np_fFMlq_vawW83XUcM5YlOYgYyNMlmIphWEy55BLY7jkEsKKEjFJtBAaWWLKTAOmWVlgJrRkMonFmDyc_zat--yx82rv-rYOkYonPBXARZoGKjpTX7bCo2pae9DtUTFQQ6MqNKqGRtVmNR-m-AO9y20H</recordid><startdate>202203</startdate><enddate>202203</enddate><creator>Liao, Yangfang</creator><creator>Xie, Jing</creator><creator>Lv, Bing</creator><creator>Xiao, Qingquan</creator><creator>Xie, Quan</creator><general>Wiley Subscription Services, Inc</general><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-5056-3771</orcidid></search><sort><creationdate>202203</creationdate><title>Determination of the interface band alignment of Mg2Si/4H‐SiC heterojuction for potential photodetector application</title><author>Liao, Yangfang ; Xie, Jing ; Lv, Bing ; Xiao, Qingquan ; Xie, Quan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p2211-7b054f3f87ed53f15b20b5ff25250f15e5ee66a33ae16fd8a0e78dce83a515643</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>4H‐SiC</topic><topic>Alignment</topic><topic>band alignment</topic><topic>Conduction bands</topic><topic>Electrons</topic><topic>heterojunction</topic><topic>Heterojunctions</topic><topic>Intermetallic compounds</topic><topic>Magnesium compounds</topic><topic>Magnetron sputtering</topic><topic>Metal silicides</topic><topic>Mg2Si</topic><topic>Photoelectrons</topic><topic>Photometers</topic><topic>Radio frequency</topic><topic>Valence band</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liao, Yangfang</creatorcontrib><creatorcontrib>Xie, Jing</creatorcontrib><creatorcontrib>Lv, Bing</creatorcontrib><creatorcontrib>Xiao, Qingquan</creatorcontrib><creatorcontrib>Xie, Quan</creatorcontrib><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Surface and interface analysis</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liao, Yangfang</au><au>Xie, Jing</au><au>Lv, Bing</au><au>Xiao, Qingquan</au><au>Xie, Quan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Determination of the interface band alignment of Mg2Si/4H‐SiC heterojuction for potential photodetector application</atitle><jtitle>Surface and interface analysis</jtitle><date>2022-03</date><risdate>2022</risdate><volume>54</volume><issue>3</issue><spage>270</spage><epage>276</epage><pages>270-276</pages><issn>0142-2421</issn><eissn>1096-9918</eissn><abstract>The Mg2Si/4H‐SiC heterojunction was prepared by radio frequency (RF) magnetron sputtering technique. The binding energies of Mg 2p, Si 2p, and C 1s core levels and the maxima of valence band were measured by X‐ray photoelectron spectroscopy (XPS). Using the optical bandgap of Mg2Si (0.78 eV) and 4H‐SiC (3.25 eV), the band offsets of valence band (VBO) and conduction band (CBO) at Mg2Si/4H‐SiC interface were identified as 1.47 and 1.00 eV, respectively. The band alignment was evaluated to be type‐I band alignment. The Mg2Si/4H‐SiC heterojunction could be a promising candidate for the infrared (IR) photodetector.</abstract><cop>Bognor Regis</cop><pub>Wiley Subscription Services, Inc</pub><doi>10.1002/sia.7051</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0002-5056-3771</orcidid></addata></record> |
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| subjects | 4H‐SiC Alignment band alignment Conduction bands Electrons heterojunction Heterojunctions Intermetallic compounds Magnesium compounds Magnetron sputtering Metal silicides Mg2Si Photoelectrons Photometers Radio frequency Valence band |
| title | Determination of the interface band alignment of Mg2Si/4H‐SiC heterojuction for potential photodetector application |
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