A Wideband E/W-Band Low-Noise Amplifier MMIC in a 70-nm Gate-Length GaN HEMT Technology
This article reports on a gallium-nitride (GaN) low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) with a 3-dB gain bandwidth (BW) from 63 to 101 GHz. The MMIC is fabricated in the Fraunhofer IAF 70-nm GaN-on-silicon-carbide (SiC) high-electron-mobility transistor (HEMT) techno...
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| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2022-02, Vol.70 (2), p.1367-1376 |
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| creator | Thome, Fabian Bruckner, Peter Leone, Stefano Quay, Rudiger |
| description | This article reports on a gallium-nitride (GaN) low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) with a 3-dB gain bandwidth (BW) from 63 to 101 GHz. The MMIC is fabricated in the Fraunhofer IAF 70-nm GaN-on-silicon-carbide (SiC) high-electron-mobility transistor (HEMT) technology. The four-stage common-source LNA exhibits an average noise figure (NF) of 3 dB for a measured frequency range from 75 to 101 GHz. The MMIC reaches a minimum NF of 2.8 dB at an operating frequency of 83 GHz. A mapping of two 100-mm wafers shows an excellent homogeneity with an 86% yield and an average NF of 3-3.3 dB. At 100 GHz, the LNA obtains output-referred 1-dB compression and third-order intercept points of 12.1 and 14.4 dBm, respectively. Furthermore, comprehensive investigations of the bias dependence of all measured performance parameters provide an insight into the presented device and LNA. To the best of the authors' knowledge, this MMIC demonstrates the lowest NF among GaN LNAs at {E}/{W} -band frequencies. |
| doi_str_mv | 10.1109/TMTT.2021.3134645 |
| format | Article |
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The MMIC is fabricated in the Fraunhofer IAF 70-nm GaN-on-silicon-carbide (SiC) high-electron-mobility transistor (HEMT) technology. The four-stage common-source LNA exhibits an average noise figure (NF) of 3 dB for a measured frequency range from 75 to 101 GHz. The MMIC reaches a minimum NF of 2.8 dB at an operating frequency of 83 GHz. A mapping of two 100-mm wafers shows an excellent homogeneity with an 86% yield and an average NF of 3-3.3 dB. At 100 GHz, the LNA obtains output-referred 1-dB compression and third-order intercept points of 12.1 and 14.4 dBm, respectively. Furthermore, comprehensive investigations of the bias dependence of all measured performance parameters provide an insight into the presented device and LNA. To the best of the authors' knowledge, this MMIC demonstrates the lowest NF among GaN LNAs at <inline-formula> <tex-math notation="LaTeX">{E}/{W} </tex-math></inline-formula>-band frequencies.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2021.3134645</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject><italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">E -band ; <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">W -band ; Amplification ; Amplifiers ; Frequency ranges ; Gallium nitride ; gallium nitride (GaN) ; Gallium nitrides ; HEMTs ; High electron mobility transistors ; high-electron-mobility transistors (HEMTs) ; Homogeneity ; Integrated circuits ; Logic gates ; low-noise amplifiers (LNAs) ; millimeter wave (mmW) ; MMIC (circuits) ; monolithic microwave integrated circuits (MMICs) ; Noise ; Noise measurement ; silicon carbide (SiC) ; Temperature measurement ; Transistors ; Transmission line measurements</subject><ispartof>IEEE transactions on microwave theory and techniques, 2022-02, Vol.70 (2), p.1367-1376</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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The MMIC is fabricated in the Fraunhofer IAF 70-nm GaN-on-silicon-carbide (SiC) high-electron-mobility transistor (HEMT) technology. The four-stage common-source LNA exhibits an average noise figure (NF) of 3 dB for a measured frequency range from 75 to 101 GHz. The MMIC reaches a minimum NF of 2.8 dB at an operating frequency of 83 GHz. A mapping of two 100-mm wafers shows an excellent homogeneity with an 86% yield and an average NF of 3-3.3 dB. At 100 GHz, the LNA obtains output-referred 1-dB compression and third-order intercept points of 12.1 and 14.4 dBm, respectively. Furthermore, comprehensive investigations of the bias dependence of all measured performance parameters provide an insight into the presented device and LNA. 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The MMIC is fabricated in the Fraunhofer IAF 70-nm GaN-on-silicon-carbide (SiC) high-electron-mobility transistor (HEMT) technology. The four-stage common-source LNA exhibits an average noise figure (NF) of 3 dB for a measured frequency range from 75 to 101 GHz. The MMIC reaches a minimum NF of 2.8 dB at an operating frequency of 83 GHz. A mapping of two 100-mm wafers shows an excellent homogeneity with an 86% yield and an average NF of 3-3.3 dB. At 100 GHz, the LNA obtains output-referred 1-dB compression and third-order intercept points of 12.1 and 14.4 dBm, respectively. Furthermore, comprehensive investigations of the bias dependence of all measured performance parameters provide an insight into the presented device and LNA. To the best of the authors' knowledge, this MMIC demonstrates the lowest NF among GaN LNAs at <inline-formula> <tex-math notation="LaTeX">{E}/{W} </tex-math></inline-formula>-band frequencies.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TMTT.2021.3134645</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0003-4579-3529</orcidid><orcidid>https://orcid.org/0000-0003-0254-6210</orcidid><orcidid>https://orcid.org/0000-0002-3003-0134</orcidid><orcidid>https://orcid.org/0000-0002-1902-4323</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">E -band <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">W -band Amplification Amplifiers Frequency ranges Gallium nitride gallium nitride (GaN) Gallium nitrides HEMTs High electron mobility transistors high-electron-mobility transistors (HEMTs) Homogeneity Integrated circuits Logic gates low-noise amplifiers (LNAs) millimeter wave (mmW) MMIC (circuits) monolithic microwave integrated circuits (MMICs) Noise Noise measurement silicon carbide (SiC) Temperature measurement Transistors Transmission line measurements |
| title | A Wideband E/W-Band Low-Noise Amplifier MMIC in a 70-nm Gate-Length GaN HEMT Technology |
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