High Hole Mobility of Polycrystalline GeSn Layers Grown by Hot‐Wire Chemical Vapor Deposition on Diamond Substrates
The conditions for the growth of polycrystalline GeSn layers on diamond substrates are determined. The effect of the incorporation of Sn in Ge layers on their morphology, structure, and transport properties is studied. GeSn layers with a thickness of 0.5 μm, obtained by the hot‐wire chemical vapor d...
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| Veröffentlicht in: | Physica status solidi. PSS-RRL. Rapid research letters 2022-01, Vol.16 (1), p.n/a |
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| container_title | Physica status solidi. PSS-RRL. Rapid research letters |
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| creator | Buzynin, Yury N. Shengurov, Vladimir G. Denisov, Sergei A. Yunin, Pavel A. Chalkov, Vadim Yu Drozdov, Michael N. Korolyov, Sergei A. Nezhdanov, Alexei V. |
| description | The conditions for the growth of polycrystalline GeSn layers on diamond substrates are determined. The effect of the incorporation of Sn in Ge layers on their morphology, structure, and transport properties is studied. GeSn layers with a thickness of 0.5 μm, obtained by the hot‐wire chemical vapor deposition method at 300 °C without annealing, are uniform with a surface roughness of less than 1.0 nm. It is shown that the incorporation of 1% Sn into the Ge lattice makes it possible to significantly increase the hole mobility of the GeSn layers from 30 to 140 cm2 V−1 s−1 despite the small crystallite grain size of 35–45 nm.
The conditions for the growth of polycrystalline GeSn layers by the hot‐wire chemical vapor deposition method at 300 °C without annealing on diamond substrates are determined. It is shown that the incorporation of 1% Sn into the Ge lattice significantly increases the hole mobility of GeSn layers from 30 to 140 cm2 V−1 s−1. |
| doi_str_mv | 10.1002/pssr.202100421 |
| format | Article |
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The conditions for the growth of polycrystalline GeSn layers by the hot‐wire chemical vapor deposition method at 300 °C without annealing on diamond substrates are determined. It is shown that the incorporation of 1% Sn into the Ge lattice significantly increases the hole mobility of GeSn layers from 30 to 140 cm2 V−1 s−1.</description><identifier>ISSN: 1862-6254</identifier><identifier>EISSN: 1862-6270</identifier><identifier>DOI: 10.1002/pssr.202100421</identifier><language>eng</language><publisher>Weinheim: Wiley Subscription Services, Inc</publisher><subject>Chemical vapor deposition ; Crystallites ; diamond substrates ; Diamonds ; electrophysical parameters ; Germanium ; GeSn layers ; Grain size ; Hole mobility ; Intermetallic compounds ; morphologies ; Polycrystals ; structures ; Substrates ; Surface roughness ; Thickness ; Tin ; Transport properties ; Wire</subject><ispartof>Physica status solidi. PSS-RRL. Rapid research letters, 2022-01, Vol.16 (1), p.n/a</ispartof><rights>2021 Wiley‐VCH GmbH</rights><rights>2022 Wiley‐VCH GmbH</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3171-f2622d2332fb0921d53237e2eb4b7e0c95117090d7d1d011c1ce1127ecb358b13</citedby><cites>FETCH-LOGICAL-c3171-f2622d2332fb0921d53237e2eb4b7e0c95117090d7d1d011c1ce1127ecb358b13</cites><orcidid>0000-0002-9241-5961</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssr.202100421$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssr.202100421$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27924,27925,45574,45575</link.rule.ids></links><search><creatorcontrib>Buzynin, Yury N.</creatorcontrib><creatorcontrib>Shengurov, Vladimir G.</creatorcontrib><creatorcontrib>Denisov, Sergei A.</creatorcontrib><creatorcontrib>Yunin, Pavel A.</creatorcontrib><creatorcontrib>Chalkov, Vadim Yu</creatorcontrib><creatorcontrib>Drozdov, Michael N.</creatorcontrib><creatorcontrib>Korolyov, Sergei A.</creatorcontrib><creatorcontrib>Nezhdanov, Alexei V.</creatorcontrib><title>High Hole Mobility of Polycrystalline GeSn Layers Grown by Hot‐Wire Chemical Vapor Deposition on Diamond Substrates</title><title>Physica status solidi. PSS-RRL. Rapid research letters</title><description>The conditions for the growth of polycrystalline GeSn layers on diamond substrates are determined. The effect of the incorporation of Sn in Ge layers on their morphology, structure, and transport properties is studied. GeSn layers with a thickness of 0.5 μm, obtained by the hot‐wire chemical vapor deposition method at 300 °C without annealing, are uniform with a surface roughness of less than 1.0 nm. It is shown that the incorporation of 1% Sn into the Ge lattice makes it possible to significantly increase the hole mobility of the GeSn layers from 30 to 140 cm2 V−1 s−1 despite the small crystallite grain size of 35–45 nm.
The conditions for the growth of polycrystalline GeSn layers by the hot‐wire chemical vapor deposition method at 300 °C without annealing on diamond substrates are determined. It is shown that the incorporation of 1% Sn into the Ge lattice significantly increases the hole mobility of GeSn layers from 30 to 140 cm2 V−1 s−1.</description><subject>Chemical vapor deposition</subject><subject>Crystallites</subject><subject>diamond substrates</subject><subject>Diamonds</subject><subject>electrophysical parameters</subject><subject>Germanium</subject><subject>GeSn layers</subject><subject>Grain size</subject><subject>Hole mobility</subject><subject>Intermetallic compounds</subject><subject>morphologies</subject><subject>Polycrystals</subject><subject>structures</subject><subject>Substrates</subject><subject>Surface roughness</subject><subject>Thickness</subject><subject>Tin</subject><subject>Transport properties</subject><subject>Wire</subject><issn>1862-6254</issn><issn>1862-6270</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNqFkE1Lw0AQhhdRsFavnhc8p-7sJtnmKK22QsVi_Dgu-ZjYLWk27iaU3PwJ_kZ_iSmVehQGZgbeZwYeQi6BjYAxfl07Z0ec8X7xORyRAYxD7oVcsuPDHPin5My5NWNBJH0xIO1cv6_o3JRIH0yqS9101BR0acous51rkrLUFdIZxhVdJB1aR2fWbCuadj3VfH9-vWmLdLLCjc6Skr4mtbF0irVxutGmon1NdbIxVU7jNnWNTRp05-SkSEqHF799SF7ubp8nc2_xOLuf3Cy8TIAEr-Ah5zkXghcpizjkgeBCIsfUTyWyLAoAJItYLnPIGUAGGQJwiVkqgnEKYkiu9ndraz5adI1am9ZW_UvVnw75OAijsE-N9qnMmt4hFqq2epPYTgFTO7Vqp1Yd1PZAtAe2usTun7RaxvHTH_sD90l-mg</recordid><startdate>202201</startdate><enddate>202201</enddate><creator>Buzynin, Yury N.</creator><creator>Shengurov, Vladimir G.</creator><creator>Denisov, Sergei A.</creator><creator>Yunin, Pavel A.</creator><creator>Chalkov, Vadim Yu</creator><creator>Drozdov, Michael N.</creator><creator>Korolyov, Sergei A.</creator><creator>Nezhdanov, Alexei V.</creator><general>Wiley Subscription Services, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-9241-5961</orcidid></search><sort><creationdate>202201</creationdate><title>High Hole Mobility of Polycrystalline GeSn Layers Grown by Hot‐Wire Chemical Vapor Deposition on Diamond Substrates</title><author>Buzynin, Yury N. ; Shengurov, Vladimir G. ; Denisov, Sergei A. ; Yunin, Pavel A. ; Chalkov, Vadim Yu ; Drozdov, Michael N. ; Korolyov, Sergei A. ; Nezhdanov, Alexei V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3171-f2622d2332fb0921d53237e2eb4b7e0c95117090d7d1d011c1ce1127ecb358b13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Chemical vapor deposition</topic><topic>Crystallites</topic><topic>diamond substrates</topic><topic>Diamonds</topic><topic>electrophysical parameters</topic><topic>Germanium</topic><topic>GeSn layers</topic><topic>Grain size</topic><topic>Hole mobility</topic><topic>Intermetallic compounds</topic><topic>morphologies</topic><topic>Polycrystals</topic><topic>structures</topic><topic>Substrates</topic><topic>Surface roughness</topic><topic>Thickness</topic><topic>Tin</topic><topic>Transport properties</topic><topic>Wire</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Buzynin, Yury N.</creatorcontrib><creatorcontrib>Shengurov, Vladimir G.</creatorcontrib><creatorcontrib>Denisov, Sergei A.</creatorcontrib><creatorcontrib>Yunin, Pavel A.</creatorcontrib><creatorcontrib>Chalkov, Vadim Yu</creatorcontrib><creatorcontrib>Drozdov, Michael N.</creatorcontrib><creatorcontrib>Korolyov, Sergei A.</creatorcontrib><creatorcontrib>Nezhdanov, Alexei V.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica status solidi. PSS-RRL. Rapid research letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Buzynin, Yury N.</au><au>Shengurov, Vladimir G.</au><au>Denisov, Sergei A.</au><au>Yunin, Pavel A.</au><au>Chalkov, Vadim Yu</au><au>Drozdov, Michael N.</au><au>Korolyov, Sergei A.</au><au>Nezhdanov, Alexei V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High Hole Mobility of Polycrystalline GeSn Layers Grown by Hot‐Wire Chemical Vapor Deposition on Diamond Substrates</atitle><jtitle>Physica status solidi. PSS-RRL. Rapid research letters</jtitle><date>2022-01</date><risdate>2022</risdate><volume>16</volume><issue>1</issue><epage>n/a</epage><issn>1862-6254</issn><eissn>1862-6270</eissn><abstract>The conditions for the growth of polycrystalline GeSn layers on diamond substrates are determined. The effect of the incorporation of Sn in Ge layers on their morphology, structure, and transport properties is studied. GeSn layers with a thickness of 0.5 μm, obtained by the hot‐wire chemical vapor deposition method at 300 °C without annealing, are uniform with a surface roughness of less than 1.0 nm. It is shown that the incorporation of 1% Sn into the Ge lattice makes it possible to significantly increase the hole mobility of the GeSn layers from 30 to 140 cm2 V−1 s−1 despite the small crystallite grain size of 35–45 nm.
The conditions for the growth of polycrystalline GeSn layers by the hot‐wire chemical vapor deposition method at 300 °C without annealing on diamond substrates are determined. It is shown that the incorporation of 1% Sn into the Ge lattice significantly increases the hole mobility of GeSn layers from 30 to 140 cm2 V−1 s−1.</abstract><cop>Weinheim</cop><pub>Wiley Subscription Services, Inc</pub><doi>10.1002/pssr.202100421</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-9241-5961</orcidid></addata></record> |
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| subjects | Chemical vapor deposition Crystallites diamond substrates Diamonds electrophysical parameters Germanium GeSn layers Grain size Hole mobility Intermetallic compounds morphologies Polycrystals structures Substrates Surface roughness Thickness Tin Transport properties Wire |
| title | High Hole Mobility of Polycrystalline GeSn Layers Grown by Hot‐Wire Chemical Vapor Deposition on Diamond Substrates |
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