Few-layered MoS2 with S-vacancies anchored on N-doped carbon flower for high performance sodium storage
•The NCF@V-MoS2 prepared by hydrothermal and chemical etching strategy.•The introduction of S-vacancy improves conductivity and enlarges d-spacing of MoS2.•The NCF@V-MoS2 yields excellent rate performance and cycling stability.•The work proposes a novel design strategy of anode material for high-per...
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Veröffentlicht in: | Journal of alloys and compounds 2022-02, Vol.895, p.162514, Article 162514 |
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Hauptverfasser: | , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | •The NCF@V-MoS2 prepared by hydrothermal and chemical etching strategy.•The introduction of S-vacancy improves conductivity and enlarges d-spacing of MoS2.•The NCF@V-MoS2 yields excellent rate performance and cycling stability.•The work proposes a novel design strategy of anode material for high-performance SIB.
Molybdenum disulfide (MoS2) has been regarded as a promising anode material for sodium ion batteries (SIBs) due to its high theoretical capacity and graphene-like layered structure. However, the intrinsically low conductivity and large volume expansion during charge/discharge cycling have become two key challenges hindering the practical application of MoS2 electrodes. Here, few-layered MoS2 nanosheets with S-vacancies are anchored on a 3D flower-like N-doped carbon frameworks (NCF@V-MoS2) by facile hydrothermal method and chemical etching strategy. The introduction of S-vacancies onto MoS2 nanosheet surface not only adjusts the electronic structure and intrinsically improves the conductivity, but also enlarges the interlayer distance and accelerates Na+ diffusion. The density functional theory calculations reveal that the existence of S-vacancies strongly accelerates Na+ absorption ability. Benefiting the synergistic effect of the conductive NCF and V-MoS2, the as-synthesized NCF@V-MoS2 yields a high specific capacity with excellent rate performance and cycling stability. This novel design strategy holds great promise for the development and application of high-performance SIBs in the future. |
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ISSN: | 0925-8388 1873-4669 |
DOI: | 10.1016/j.jallcom.2021.162514 |