Narrow Linewidth Semiconductor Laser Based on Anti-Symmetric Bragg Grating
We present a new configuration of narrow linewidth semiconductor lasers (NLSLs) based on a novel narrow-band reflector (NBR) with π phase-shifted anti-symmetric Bragg grating (π-ASBG). Based on this configuration, two specific laser structures are theoretically analyzed. The effective length of Brag...
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| Veröffentlicht in: | Journal of lightwave technology 2022-02, Vol.40 (3), p.762-769 |
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| container_end_page | 769 |
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| container_issue | 3 |
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| container_title | Journal of lightwave technology |
| container_volume | 40 |
| creator | Wang, Hongji Shi, Yuechun Wu, Yitao Hong, Ziming Ma, Yuxin Wu, Haoyuan Zhu, Xiaojun Han, Zhanghua Chen, Xiangfei |
| description | We present a new configuration of narrow linewidth semiconductor lasers (NLSLs) based on a novel narrow-band reflector (NBR) with π phase-shifted anti-symmetric Bragg grating (π-ASBG). Based on this configuration, two specific laser structures are theoretically analyzed. The effective length of Bragg grating is highly increased due to the double hybrid-mode resonances between the fundamental transverse electric (TE0) mode and first-order transverse electric (TE1) mode in the π-ASBG with the aid of a uniform grating reflector. The narrowest linewidth of ∼2.4 kHz is obtained of the proposed NLSLs, which is much lower than the traditional NLSLs with external uniform Bragg grating in the case of the same grating length. |
| doi_str_mv | 10.1109/JLT.2022.3142541 |
| format | Article |
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Based on this configuration, two specific laser structures are theoretically analyzed. The effective length of Bragg grating is highly increased due to the double hybrid-mode resonances between the fundamental transverse electric (TE0) mode and first-order transverse electric (TE1) mode in the π-ASBG with the aid of a uniform grating reflector. 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(IEEE) 2022</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c244t-86e4ccbfccd356536f8b22c7dbe4cce5071b541961bf39169c38090578e696ea3</cites><orcidid>0000-0002-9834-3460 ; 0000-0002-1486-3646 ; 0000-0002-4177-2555 ; 0000-0001-5826-5472</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9681306$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9681306$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Wang, Hongji</creatorcontrib><creatorcontrib>Shi, Yuechun</creatorcontrib><creatorcontrib>Wu, Yitao</creatorcontrib><creatorcontrib>Hong, Ziming</creatorcontrib><creatorcontrib>Ma, Yuxin</creatorcontrib><creatorcontrib>Wu, Haoyuan</creatorcontrib><creatorcontrib>Zhu, Xiaojun</creatorcontrib><creatorcontrib>Han, Zhanghua</creatorcontrib><creatorcontrib>Chen, Xiangfei</creatorcontrib><title>Narrow Linewidth Semiconductor Laser Based on Anti-Symmetric Bragg Grating</title><title>Journal of lightwave technology</title><addtitle>JLT</addtitle><description>We present a new configuration of narrow linewidth semiconductor lasers (NLSLs) based on a novel narrow-band reflector (NBR) with π phase-shifted anti-symmetric Bragg grating (π-ASBG). Based on this configuration, two specific laser structures are theoretically analyzed. The effective length of Bragg grating is highly increased due to the double hybrid-mode resonances between the fundamental transverse electric (TE0) mode and first-order transverse electric (TE1) mode in the π-ASBG with the aid of a uniform grating reflector. The narrowest linewidth of ∼2.4 kHz is obtained of the proposed NLSLs, which is much lower than the traditional NLSLs with external uniform Bragg grating in the case of the same grating length.</description><subject>Bragg grating</subject><subject>Bragg gratings</subject><subject>Configurations</subject><subject>Couplings</subject><subject>Gratings</subject><subject>Laser applications</subject><subject>Laser theory</subject><subject>narrow linewidth</subject><subject>Optical waveguides</subject><subject>Reflection</subject><subject>semiconductor laser</subject><subject>Semiconductor lasers</subject><issn>0733-8724</issn><issn>1558-2213</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1LAzEQhoMoWKt3wUvA89Z8fxzbotWy6KH1HLLZbE1xd2uSUvrv3VLxMgPD884MDwD3GE0wRvppWa4nBBEyoZgRzvAFGGHOVUEIppdghCSlhZKEXYOblLYIYcaUHIHlu42xP8AydP4Q6vwFV74Nru_qvct9hKVNPsLZUGvYd3Da5VCsjm3rcwwOzqLdbOAi2hy6zS24aux38nd_fQw-X57X89ei_Fi8zadl4QhjuVDCM-eqxrmacsGpaFRFiJN1dZp7jiSuhv-1wFVDNRbaUYU04lJ5oYW3dAwez3t3sf_Z-5TNtt_HbjhpiCCUSSyIHih0plzsU4q-MbsYWhuPBiNzMmYGY-ZkzPwZGyIP50jw3v_jWihMkaC_N5RmUA</recordid><startdate>20220201</startdate><enddate>20220201</enddate><creator>Wang, Hongji</creator><creator>Shi, Yuechun</creator><creator>Wu, Yitao</creator><creator>Hong, Ziming</creator><creator>Ma, Yuxin</creator><creator>Wu, Haoyuan</creator><creator>Zhu, Xiaojun</creator><creator>Han, Zhanghua</creator><creator>Chen, Xiangfei</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-9834-3460</orcidid><orcidid>https://orcid.org/0000-0002-1486-3646</orcidid><orcidid>https://orcid.org/0000-0002-4177-2555</orcidid><orcidid>https://orcid.org/0000-0001-5826-5472</orcidid></search><sort><creationdate>20220201</creationdate><title>Narrow Linewidth Semiconductor Laser Based on Anti-Symmetric Bragg Grating</title><author>Wang, Hongji ; Shi, Yuechun ; Wu, Yitao ; Hong, Ziming ; Ma, Yuxin ; Wu, Haoyuan ; Zhu, Xiaojun ; Han, Zhanghua ; Chen, Xiangfei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c244t-86e4ccbfccd356536f8b22c7dbe4cce5071b541961bf39169c38090578e696ea3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Bragg grating</topic><topic>Bragg gratings</topic><topic>Configurations</topic><topic>Couplings</topic><topic>Gratings</topic><topic>Laser applications</topic><topic>Laser theory</topic><topic>narrow linewidth</topic><topic>Optical waveguides</topic><topic>Reflection</topic><topic>semiconductor laser</topic><topic>Semiconductor lasers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Hongji</creatorcontrib><creatorcontrib>Shi, Yuechun</creatorcontrib><creatorcontrib>Wu, Yitao</creatorcontrib><creatorcontrib>Hong, Ziming</creatorcontrib><creatorcontrib>Ma, Yuxin</creatorcontrib><creatorcontrib>Wu, Haoyuan</creatorcontrib><creatorcontrib>Zhu, Xiaojun</creatorcontrib><creatorcontrib>Han, Zhanghua</creatorcontrib><creatorcontrib>Chen, Xiangfei</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of lightwave technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wang, Hongji</au><au>Shi, Yuechun</au><au>Wu, Yitao</au><au>Hong, Ziming</au><au>Ma, Yuxin</au><au>Wu, Haoyuan</au><au>Zhu, Xiaojun</au><au>Han, Zhanghua</au><au>Chen, Xiangfei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Narrow Linewidth Semiconductor Laser Based on Anti-Symmetric Bragg Grating</atitle><jtitle>Journal of lightwave technology</jtitle><stitle>JLT</stitle><date>2022-02-01</date><risdate>2022</risdate><volume>40</volume><issue>3</issue><spage>762</spage><epage>769</epage><pages>762-769</pages><issn>0733-8724</issn><eissn>1558-2213</eissn><coden>JLTEDG</coden><abstract>We present a new configuration of narrow linewidth semiconductor lasers (NLSLs) based on a novel narrow-band reflector (NBR) with π phase-shifted anti-symmetric Bragg grating (π-ASBG). Based on this configuration, two specific laser structures are theoretically analyzed. The effective length of Bragg grating is highly increased due to the double hybrid-mode resonances between the fundamental transverse electric (TE0) mode and first-order transverse electric (TE1) mode in the π-ASBG with the aid of a uniform grating reflector. The narrowest linewidth of ∼2.4 kHz is obtained of the proposed NLSLs, which is much lower than the traditional NLSLs with external uniform Bragg grating in the case of the same grating length.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JLT.2022.3142541</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-9834-3460</orcidid><orcidid>https://orcid.org/0000-0002-1486-3646</orcidid><orcidid>https://orcid.org/0000-0002-4177-2555</orcidid><orcidid>https://orcid.org/0000-0001-5826-5472</orcidid></addata></record> |
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| subjects | Bragg grating Bragg gratings Configurations Couplings Gratings Laser applications Laser theory narrow linewidth Optical waveguides Reflection semiconductor laser Semiconductor lasers |
| title | Narrow Linewidth Semiconductor Laser Based on Anti-Symmetric Bragg Grating |
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