Electrical Properties of Silicon-Oxide-Based Memristors on Silicon-on-Insulator Substrates

Memristors attract the considerable interest of researchers and engineers due to the prospects for creating new information and computing systems on their basis. First of all, this refers to memristive devices based on the resistive switching (RS) effect, which, in most cases, are fabricated in the...

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Veröffentlicht in:	Nanobiotechnology Reports (Online) 2021-11, Vol.16 (6), p.745-754
Hauptverfasser:	Koryazhkina, M. N., Filatov, D. O., Tikhov, S. V., Belov, A. I., Korolev, D. S., Kruglov, A. V., Kryukov, R. N., Zubkov, S. Yu, Vorontsov, V. A., Pavlov, D. A., Tetelbaum, D. I., Mikhaylov, A. N., Kim, S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Basic oxides Chemistry and Materials Science CMOS Electrical properties Electroforming Heat treatment Industrial and Production Engineering Machines Manufacturing Materials Science Memory devices Memristors Nanoelectronics and Neuromorphic Computer Systems Nanotechnology Processes Silicon Silicon oxides Silicon substrates SOI (semiconductors) Switching Thin films
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