Up-conversion photoluminescence and dielectric properties of pulsed-laser-ablated (Bi, Er)4Ti3O12 thin films grown with three different orientations

Epitaxial (001)-, (118)-, and (104)-oriented Bi 3.95 Er 0.05 Ti 3 O 12 (BErT) films were reproducibly obtained by pulsed-laser-ablated method, and the (100)-, (110)-, and (111)-oriented Nb-doped SrTiO 3 (NSTO) was used as substrates, respectively. X-ray diffraction indicated that the epitaxial orien...

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Veröffentlicht in:	Applied physics. A, Materials science & processing Materials science & processing, 2022-02, Vol.128 (2), Article 154
Hauptverfasser:	Mo, Zhong, Chen, Ruqi, Liang, Lirong
Format:	Artikel
Sprache:	eng
Schlagworte:	Ablation Anisotropy Applied physics Characterization and Evaluation of Materials Condensed Matter Physics Dielectric properties Epitaxial growth Fluorescence Incident light Light emission Luminescence Machines Manufacturing Materials science Nanotechnology Niobium Optical and Electronic Materials Orientation Photoluminescence Physics Physics and Astronomy Processes Pulsed lasers Spectrum analysis Substrates Surfaces and Interfaces Thin Films Upconversion
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