TCAD Modeling of the Dynamic V TH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs

TCAD modeling of the dynamic threshold voltage shift (hysteresis) occurring under fast sweeping characterization in Schottky-type p-GaN gate high-electron-mobility transistors (HEMTs) is reported, to the best of our knowledge, for the first time. Dynamic [Formula Omitted] hysteresis has been first e...

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Veröffentlicht in:	IEEE transactions on electron devices 2022-02, Vol.69 (2), p.507-513
Hauptverfasser:	Tallarico, A. N., Millesimo, M., Bakeroot, B., Borga, M., Posthuma, N., Decoutere, S., Sangiorgi, E., Fiegna, C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Barrier layers Gallium nitrides High electron mobility transistors Hysteresis Leakage current Modelling Sweeping Threshold voltage Time dependence
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