Synthesis of pristine graphene-like behaving rGO thin film: Insights into what really matters

Despite the huge expansion of GO/rGO market, there is a clear lack of experimental studies on getting high quality, large scale GO and rGO nanosheets/thin films, which is a critical requirement for electronic applications. In this work, a detailed experimental study on the effect of lateral sheet size on properties of GO/rGO, supported by density functional theory (DFT) calculations, is presented for the first time, to help prepare pristine graphene-like rGO. Furthermore, we investigated the effect of thermal reduction at low temperature (200 °C), under ambient pressure, on the corresponding electronic properties of rGO. Current-voltage (I–V) analysis, optical and electron microscopy, atomic force microscopy, Raman, XPS, and quantitative 13C NMR spectroscopy were used to study and optimize rGO. The optimized rGO-field-effect transistor (rGO-FET) device exhibited the highest charge carrier mobilities, i.e. 2,962 (holes) and 2,183 (electrons) cm2/V.s. Furthermore, the transconductance characteristic curve of rGO-FET showed the ambipolar behavior of high-quality graphene, with Dirac point around zero. In addition, the optical band gap of rGO nanosheets (∼0.4 eV), prepared in this work, is among the smallest reported band gaps for rGO. These findings highlight the significance of our study for synthesizing large-scale graphene-like rGO thin film, for ultra-fast, low-power transistor applications. [Display omitted]