Unveiling structural characteristics for ultralow resistance drift in BiSb-Ge2Sb2Te5 materials for phase-change neuron synaptic devices

•Suppression resistance shift of amorphous GST for phase-change neuron synaptic devices.•The p-type to n-type conductivity conversion has been realized by BiSb addition.•Alloying reveals dual-phase coexistence behavior and tunable band gap.•The decrease in resistance drift originates from the narrow...

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Veröffentlicht in:	Journal of alloys and compounds 2022-02, Vol.892, p.162148, Article 162148
Hauptverfasser:	Chen, Chen, Zhu, Jinyi, Chen, Yingqi, Wang, Guoxiang
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous materials Antimony Atomic mobilities Bismuth Drift Functional applications Liquid nitrogen Microstructure Phase change materials Tellurium Thermal properties X-ray methods
Online-Zugang:	Volltext
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