GaN-based bipolar cascade lasers with 25 nm wide quantum wells
In good agreement with measurements, self-consistent numerical simulations are utilized to analyze internal device physics, performance limitations, and optimization options for a unique laser design with multiple active regions separated by tunnel junctions, featuring surprisingly wide InGaN quantu...
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| Veröffentlicht in: | Optical and quantum electronics 2022, Vol.54 (1), Article 62 |
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| container_title | Optical and quantum electronics |
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| creator | Piprek, Joachim Muziol, G. Siekacz, M. Skierbiszewski, C. |
| description | In good agreement with measurements, self-consistent numerical simulations are utilized to analyze internal device physics, performance limitations, and optimization options for a unique laser design with multiple active regions separated by tunnel junctions, featuring surprisingly wide InGaN quantum wells. Contrary to common assumptions, these quantum wells are revealed to allow for perfect screening of the strong built-in polarization field, while optical gain is provided by higher quantum levels. However, internal absorption, low p-cladding conductivity, and self-heating are shown to strongly limit the laser performance. |
| doi_str_mv | 10.1007/s11082-021-03455-0 |
| format | Article |
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| language | eng |
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| subjects | Active regions (lasers) Cascade lasers Characterization and Evaluation of Materials Computer Communication Networks Electrical Engineering Laser beam heating Lasers Numerical Simulation of Optoelectronic Devices 2021 Optical Devices Optics Optimization Photonics Physics Physics and Astronomy Quantum wells Tunnel junctions |
| title | GaN-based bipolar cascade lasers with 25 nm wide quantum wells |
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