A reversible tuning of Fermi level in BiSbTe3 thin films through ion implantation

•Structural and Electrical properties of BiSbTe3 thin films are studied.•Effect of Implantation-induced defects in BiSbTe3 thin films is explained.•Strain-induced reversible tuning of Fermi level is found in BiSbTe3 thin films.•Tailoring of band structure is observed with Fe implantation in BiSbTe3...

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Veröffentlicht in:	Materials letters 2022-01, Vol.306, p.130923, Article 130923
Hauptverfasser:	Yadav, Jyoti, Anoop, M.D., Singh, Rini, Yadav, Nisha, Rao, N. Srinivasa, Singh, Fouran, Jain, Ankur, Ichikawa, Takayuki, Awasthi, Kamlendra, Kumar, Manoj
Format:	Artikel
Sprache:	eng
Schlagworte:	Fermi level Ion implantation Lattice strain Materials science Physical properties Strain Engineering Thin films Tuning
Online-Zugang:	Volltext
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