A reversible tuning of Fermi level in BiSbTe3 thin films through ion implantation
•Structural and Electrical properties of BiSbTe3 thin films are studied.•Effect of Implantation-induced defects in BiSbTe3 thin films is explained.•Strain-induced reversible tuning of Fermi level is found in BiSbTe3 thin films.•Tailoring of band structure is observed with Fe implantation in BiSbTe3...
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| Veröffentlicht in: | Materials letters 2022-01, Vol.306, p.130923, Article 130923 |
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| container_start_page | 130923 |
| container_title | Materials letters |
| container_volume | 306 |
| creator | Yadav, Jyoti Anoop, M.D. Singh, Rini Yadav, Nisha Rao, N. Srinivasa Singh, Fouran Jain, Ankur Ichikawa, Takayuki Awasthi, Kamlendra Kumar, Manoj |
| description | •Structural and Electrical properties of BiSbTe3 thin films are studied.•Effect of Implantation-induced defects in BiSbTe3 thin films is explained.•Strain-induced reversible tuning of Fermi level is found in BiSbTe3 thin films.•Tailoring of band structure is observed with Fe implantation in BiSbTe3 thin films.
In layered structure materials, tuning of strain is used to control critical electronic and physical properties. In this work, precise and controlled tuning of strain is achieved with implantation. Thin films of BiSbTe3 were implanted with Fe ion of energy 100 keV at 5 different fluences. The lattice strain is found to be reversibly tuned with Fe implantation. The effect of Fe ions on the electronic band structure of BiSbTe3 is confirmed by the change in resistivity and tuning of Fermi level with implantation. The observed reversible tuning of the Fermi level suggests the possibility of device control applications. |
| doi_str_mv | 10.1016/j.matlet.2021.130923 |
| format | Article |
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In layered structure materials, tuning of strain is used to control critical electronic and physical properties. In this work, precise and controlled tuning of strain is achieved with implantation. Thin films of BiSbTe3 were implanted with Fe ion of energy 100 keV at 5 different fluences. The lattice strain is found to be reversibly tuned with Fe implantation. The effect of Fe ions on the electronic band structure of BiSbTe3 is confirmed by the change in resistivity and tuning of Fermi level with implantation. The observed reversible tuning of the Fermi level suggests the possibility of device control applications.</description><identifier>ISSN: 0167-577X</identifier><identifier>EISSN: 1873-4979</identifier><identifier>DOI: 10.1016/j.matlet.2021.130923</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Fermi level ; Ion implantation ; Lattice strain ; Materials science ; Physical properties ; Strain Engineering ; Thin films ; Tuning</subject><ispartof>Materials letters, 2022-01, Vol.306, p.130923, Article 130923</ispartof><rights>2021 Elsevier B.V.</rights><rights>Copyright Elsevier BV Jan 1, 2022</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c334t-1a4e73f0d75bc79beda8fd24f03437ca1f7b3dfc0b9fd06241b4e9417b4d00ee3</citedby><cites>FETCH-LOGICAL-c334t-1a4e73f0d75bc79beda8fd24f03437ca1f7b3dfc0b9fd06241b4e9417b4d00ee3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.matlet.2021.130923$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Yadav, Jyoti</creatorcontrib><creatorcontrib>Anoop, M.D.</creatorcontrib><creatorcontrib>Singh, Rini</creatorcontrib><creatorcontrib>Yadav, Nisha</creatorcontrib><creatorcontrib>Rao, N. Srinivasa</creatorcontrib><creatorcontrib>Singh, Fouran</creatorcontrib><creatorcontrib>Jain, Ankur</creatorcontrib><creatorcontrib>Ichikawa, Takayuki</creatorcontrib><creatorcontrib>Awasthi, Kamlendra</creatorcontrib><creatorcontrib>Kumar, Manoj</creatorcontrib><title>A reversible tuning of Fermi level in BiSbTe3 thin films through ion implantation</title><title>Materials letters</title><description>•Structural and Electrical properties of BiSbTe3 thin films are studied.•Effect of Implantation-induced defects in BiSbTe3 thin films is explained.•Strain-induced reversible tuning of Fermi level is found in BiSbTe3 thin films.•Tailoring of band structure is observed with Fe implantation in BiSbTe3 thin films.
In layered structure materials, tuning of strain is used to control critical electronic and physical properties. In this work, precise and controlled tuning of strain is achieved with implantation. Thin films of BiSbTe3 were implanted with Fe ion of energy 100 keV at 5 different fluences. The lattice strain is found to be reversibly tuned with Fe implantation. The effect of Fe ions on the electronic band structure of BiSbTe3 is confirmed by the change in resistivity and tuning of Fermi level with implantation. The observed reversible tuning of the Fermi level suggests the possibility of device control applications.</description><subject>Fermi level</subject><subject>Ion implantation</subject><subject>Lattice strain</subject><subject>Materials science</subject><subject>Physical properties</subject><subject>Strain Engineering</subject><subject>Thin films</subject><subject>Tuning</subject><issn>0167-577X</issn><issn>1873-4979</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp9UE1LAzEQDaJgrf4DDwHPuyabtOlehFqsCgURK3gLyWbSZtmPmmQL_ntT1rOHYeYx771hHkK3lOSU0Pl9nbcqNhDzghQ0p4yUBTtDE7oQLOOlKM_RJNFENhPi6xJdhVATQnhJ-AS9L7GHI_jgdAM4Dp3rdri3eA2-dbhJqwa7Dj-6D70FhuM-AeuaNqTR98Nuj13fYdceGtVFFRO4RhdWNQFu_voUfa6ftquXbPP2_LpabrKKMR4zqjgIZokRM12JUoNRC2sKbgnjTFSKWqGZsRXRpTVkXnCqOZScCs0NIQBsiu5G34PvvwcIUdb94Lt0UhZzOuOFSJVYfGRVvg_Bg5UH71rlfyQl8hSerOUYnjyFJ8fwkuxhlEH64OjAy1A56CowzkMVpend_wa_y6p6Mw</recordid><startdate>20220101</startdate><enddate>20220101</enddate><creator>Yadav, Jyoti</creator><creator>Anoop, M.D.</creator><creator>Singh, Rini</creator><creator>Yadav, Nisha</creator><creator>Rao, N. Srinivasa</creator><creator>Singh, Fouran</creator><creator>Jain, Ankur</creator><creator>Ichikawa, Takayuki</creator><creator>Awasthi, Kamlendra</creator><creator>Kumar, Manoj</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20220101</creationdate><title>A reversible tuning of Fermi level in BiSbTe3 thin films through ion implantation</title><author>Yadav, Jyoti ; Anoop, M.D. ; Singh, Rini ; Yadav, Nisha ; Rao, N. Srinivasa ; Singh, Fouran ; Jain, Ankur ; Ichikawa, Takayuki ; Awasthi, Kamlendra ; Kumar, Manoj</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c334t-1a4e73f0d75bc79beda8fd24f03437ca1f7b3dfc0b9fd06241b4e9417b4d00ee3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Fermi level</topic><topic>Ion implantation</topic><topic>Lattice strain</topic><topic>Materials science</topic><topic>Physical properties</topic><topic>Strain Engineering</topic><topic>Thin films</topic><topic>Tuning</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yadav, Jyoti</creatorcontrib><creatorcontrib>Anoop, M.D.</creatorcontrib><creatorcontrib>Singh, Rini</creatorcontrib><creatorcontrib>Yadav, Nisha</creatorcontrib><creatorcontrib>Rao, N. Srinivasa</creatorcontrib><creatorcontrib>Singh, Fouran</creatorcontrib><creatorcontrib>Jain, Ankur</creatorcontrib><creatorcontrib>Ichikawa, Takayuki</creatorcontrib><creatorcontrib>Awasthi, Kamlendra</creatorcontrib><creatorcontrib>Kumar, Manoj</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yadav, Jyoti</au><au>Anoop, M.D.</au><au>Singh, Rini</au><au>Yadav, Nisha</au><au>Rao, N. Srinivasa</au><au>Singh, Fouran</au><au>Jain, Ankur</au><au>Ichikawa, Takayuki</au><au>Awasthi, Kamlendra</au><au>Kumar, Manoj</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A reversible tuning of Fermi level in BiSbTe3 thin films through ion implantation</atitle><jtitle>Materials letters</jtitle><date>2022-01-01</date><risdate>2022</risdate><volume>306</volume><spage>130923</spage><pages>130923-</pages><artnum>130923</artnum><issn>0167-577X</issn><eissn>1873-4979</eissn><abstract>•Structural and Electrical properties of BiSbTe3 thin films are studied.•Effect of Implantation-induced defects in BiSbTe3 thin films is explained.•Strain-induced reversible tuning of Fermi level is found in BiSbTe3 thin films.•Tailoring of band structure is observed with Fe implantation in BiSbTe3 thin films.
In layered structure materials, tuning of strain is used to control critical electronic and physical properties. In this work, precise and controlled tuning of strain is achieved with implantation. Thin films of BiSbTe3 were implanted with Fe ion of energy 100 keV at 5 different fluences. The lattice strain is found to be reversibly tuned with Fe implantation. The effect of Fe ions on the electronic band structure of BiSbTe3 is confirmed by the change in resistivity and tuning of Fermi level with implantation. The observed reversible tuning of the Fermi level suggests the possibility of device control applications.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.matlet.2021.130923</doi></addata></record> |
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| language | eng |
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| subjects | Fermi level Ion implantation Lattice strain Materials science Physical properties Strain Engineering Thin films Tuning |
| title | A reversible tuning of Fermi level in BiSbTe3 thin films through ion implantation |
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