Two-Dimensional MoSi2N4: An Excellent 2-D Semiconductor for Field-Effect Transistors
We report the performance of field-effect transistors (FETs), composed of monolayer of recently synthesized layered two-dimensional (2-D) MoSi 2 N 4 as channel material, using the first principles quantum transport simulations. The devices' performance is assessed as per the International Roadm...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on electron devices 2022-01, Vol.69 (1), p.406-413 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 413 |
|---|---|
| container_issue | 1 |
| container_start_page | 406 |
| container_title | IEEE transactions on electron devices |
| container_volume | 69 |
| creator | Nandan, Keshari Ghosh, Barun Agarwal, Amit Bhowmick, Somnath Chauhan, Yogesh S. |
| description | We report the performance of field-effect transistors (FETs), composed of monolayer of recently synthesized layered two-dimensional (2-D) MoSi 2 N 4 as channel material, using the first principles quantum transport simulations. The devices' performance is assessed as per the International Roadmap for Devices and Systems (IRDS) 2020 roadmap for the year 2034 and compared to advanced silicon-based FETs, carbon nanotube-based FETs, and other promising 2-D materials-based FETs. Finally, we estimate the figure of merits of a combinational and a sequential logic circuit based on our double gate devices and benchmark against promising alternative logic technologies. The performance of our devices and circuits based on them is encouraging, and competitive to other logic alternatives. |
| doi_str_mv | 10.1109/TED.2021.3130834 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_journals_2615164775</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>9646230</ieee_id><sourcerecordid>2615164775</sourcerecordid><originalsourceid>FETCH-LOGICAL-i269t-9378b92a6e9efe54b0a14317b90d38aec4cc1d173a704d475aef76c1168b13b3</originalsourceid><addsrcrecordid>eNotkMFLwzAUxoMoOKd3wUvAc2ZekiaNt-E6FaYe1ntJ01fI6NrZdKj_vZF5eHw8vh8f73uE3AJfAHD7UBarheACFhIkz6U6IzPIMsOsVvqczDiHnFmZy0tyFeMurVopMSNl-TWwVdhjH8PQu46-Ddsg3tUjXfa0-PbYddhPVLAV3eI--KFvjn4aRtqmWQfsGla0LfqJlqNLGTF58ZpctK6LePOvc1Kui_LphW0-nl-flhsWhLZTOsfktRVOo8UWM1VzB0qCqS1vZO7QK--hASOd4apRJnPYGu0BdF6DrOWc3J9iD-PwecQ4VbvhOKYSsRIastTQmCxRdycqIGJ1GMPejT_V31uE5PIXxKJZsw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2615164775</pqid></control><display><type>article</type><title>Two-Dimensional MoSi2N4: An Excellent 2-D Semiconductor for Field-Effect Transistors</title><source>IEEE Electronic Library (IEL)</source><creator>Nandan, Keshari ; Ghosh, Barun ; Agarwal, Amit ; Bhowmick, Somnath ; Chauhan, Yogesh S.</creator><creatorcontrib>Nandan, Keshari ; Ghosh, Barun ; Agarwal, Amit ; Bhowmick, Somnath ; Chauhan, Yogesh S.</creatorcontrib><description>We report the performance of field-effect transistors (FETs), composed of monolayer of recently synthesized layered two-dimensional (2-D) MoSi 2 N 4 as channel material, using the first principles quantum transport simulations. The devices' performance is assessed as per the International Roadmap for Devices and Systems (IRDS) 2020 roadmap for the year 2034 and compared to advanced silicon-based FETs, carbon nanotube-based FETs, and other promising 2-D materials-based FETs. Finally, we estimate the figure of merits of a combinational and a sequential logic circuit based on our double gate devices and benchmark against promising alternative logic technologies. The performance of our devices and circuits based on them is encouraging, and competitive to other logic alternatives.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2021.3130834</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Carbon nanotubes ; Density functional theory (DFT) ; Discrete Fourier transforms ; Field effect transistors ; field-effect transistors (FETs) ; First principles ; Lattices ; Logic circuits ; Logic gates ; maximally localized Wannier functions (MLWFs) ; monolayer (ML) ; nonequilibrium Green’s function (NEGF) ; Performance evaluation ; Photonic band gap ; Quantum transport ; quantum transport (QT) ; Semiconductor devices ; Transistors ; Tunneling ; Two dimensional materials</subject><ispartof>IEEE transactions on electron devices, 2022-01, Vol.69 (1), p.406-413</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2022</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0001-7165-9628 ; 0000-0003-4094-5204 ; 0000-0002-3356-8917</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9646230$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9646230$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Nandan, Keshari</creatorcontrib><creatorcontrib>Ghosh, Barun</creatorcontrib><creatorcontrib>Agarwal, Amit</creatorcontrib><creatorcontrib>Bhowmick, Somnath</creatorcontrib><creatorcontrib>Chauhan, Yogesh S.</creatorcontrib><title>Two-Dimensional MoSi2N4: An Excellent 2-D Semiconductor for Field-Effect Transistors</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>We report the performance of field-effect transistors (FETs), composed of monolayer of recently synthesized layered two-dimensional (2-D) MoSi 2 N 4 as channel material, using the first principles quantum transport simulations. The devices' performance is assessed as per the International Roadmap for Devices and Systems (IRDS) 2020 roadmap for the year 2034 and compared to advanced silicon-based FETs, carbon nanotube-based FETs, and other promising 2-D materials-based FETs. Finally, we estimate the figure of merits of a combinational and a sequential logic circuit based on our double gate devices and benchmark against promising alternative logic technologies. The performance of our devices and circuits based on them is encouraging, and competitive to other logic alternatives.</description><subject>Carbon nanotubes</subject><subject>Density functional theory (DFT)</subject><subject>Discrete Fourier transforms</subject><subject>Field effect transistors</subject><subject>field-effect transistors (FETs)</subject><subject>First principles</subject><subject>Lattices</subject><subject>Logic circuits</subject><subject>Logic gates</subject><subject>maximally localized Wannier functions (MLWFs)</subject><subject>monolayer (ML)</subject><subject>nonequilibrium Green’s function (NEGF)</subject><subject>Performance evaluation</subject><subject>Photonic band gap</subject><subject>Quantum transport</subject><subject>quantum transport (QT)</subject><subject>Semiconductor devices</subject><subject>Transistors</subject><subject>Tunneling</subject><subject>Two dimensional materials</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNotkMFLwzAUxoMoOKd3wUvAc2ZekiaNt-E6FaYe1ntJ01fI6NrZdKj_vZF5eHw8vh8f73uE3AJfAHD7UBarheACFhIkz6U6IzPIMsOsVvqczDiHnFmZy0tyFeMurVopMSNl-TWwVdhjH8PQu46-Ddsg3tUjXfa0-PbYddhPVLAV3eI--KFvjn4aRtqmWQfsGla0LfqJlqNLGTF58ZpctK6LePOvc1Kui_LphW0-nl-flhsWhLZTOsfktRVOo8UWM1VzB0qCqS1vZO7QK--hASOd4apRJnPYGu0BdF6DrOWc3J9iD-PwecQ4VbvhOKYSsRIastTQmCxRdycqIGJ1GMPejT_V31uE5PIXxKJZsw</recordid><startdate>20220101</startdate><enddate>20220101</enddate><creator>Nandan, Keshari</creator><creator>Ghosh, Barun</creator><creator>Agarwal, Amit</creator><creator>Bhowmick, Somnath</creator><creator>Chauhan, Yogesh S.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-7165-9628</orcidid><orcidid>https://orcid.org/0000-0003-4094-5204</orcidid><orcidid>https://orcid.org/0000-0002-3356-8917</orcidid></search><sort><creationdate>20220101</creationdate><title>Two-Dimensional MoSi2N4: An Excellent 2-D Semiconductor for Field-Effect Transistors</title><author>Nandan, Keshari ; Ghosh, Barun ; Agarwal, Amit ; Bhowmick, Somnath ; Chauhan, Yogesh S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i269t-9378b92a6e9efe54b0a14317b90d38aec4cc1d173a704d475aef76c1168b13b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Carbon nanotubes</topic><topic>Density functional theory (DFT)</topic><topic>Discrete Fourier transforms</topic><topic>Field effect transistors</topic><topic>field-effect transistors (FETs)</topic><topic>First principles</topic><topic>Lattices</topic><topic>Logic circuits</topic><topic>Logic gates</topic><topic>maximally localized Wannier functions (MLWFs)</topic><topic>monolayer (ML)</topic><topic>nonequilibrium Green’s function (NEGF)</topic><topic>Performance evaluation</topic><topic>Photonic band gap</topic><topic>Quantum transport</topic><topic>quantum transport (QT)</topic><topic>Semiconductor devices</topic><topic>Transistors</topic><topic>Tunneling</topic><topic>Two dimensional materials</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nandan, Keshari</creatorcontrib><creatorcontrib>Ghosh, Barun</creatorcontrib><creatorcontrib>Agarwal, Amit</creatorcontrib><creatorcontrib>Bhowmick, Somnath</creatorcontrib><creatorcontrib>Chauhan, Yogesh S.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Nandan, Keshari</au><au>Ghosh, Barun</au><au>Agarwal, Amit</au><au>Bhowmick, Somnath</au><au>Chauhan, Yogesh S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Two-Dimensional MoSi2N4: An Excellent 2-D Semiconductor for Field-Effect Transistors</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2022-01-01</date><risdate>2022</risdate><volume>69</volume><issue>1</issue><spage>406</spage><epage>413</epage><pages>406-413</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>We report the performance of field-effect transistors (FETs), composed of monolayer of recently synthesized layered two-dimensional (2-D) MoSi 2 N 4 as channel material, using the first principles quantum transport simulations. The devices' performance is assessed as per the International Roadmap for Devices and Systems (IRDS) 2020 roadmap for the year 2034 and compared to advanced silicon-based FETs, carbon nanotube-based FETs, and other promising 2-D materials-based FETs. Finally, we estimate the figure of merits of a combinational and a sequential logic circuit based on our double gate devices and benchmark against promising alternative logic technologies. The performance of our devices and circuits based on them is encouraging, and competitive to other logic alternatives.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2021.3130834</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0001-7165-9628</orcidid><orcidid>https://orcid.org/0000-0003-4094-5204</orcidid><orcidid>https://orcid.org/0000-0002-3356-8917</orcidid></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 2022-01, Vol.69 (1), p.406-413 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_proquest_journals_2615164775 |
| source | IEEE Electronic Library (IEL) |
| subjects | Carbon nanotubes Density functional theory (DFT) Discrete Fourier transforms Field effect transistors field-effect transistors (FETs) First principles Lattices Logic circuits Logic gates maximally localized Wannier functions (MLWFs) monolayer (ML) nonequilibrium Green’s function (NEGF) Performance evaluation Photonic band gap Quantum transport quantum transport (QT) Semiconductor devices Transistors Tunneling Two dimensional materials |
| title | Two-Dimensional MoSi2N4: An Excellent 2-D Semiconductor for Field-Effect Transistors |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-07T05%3A39%3A15IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Two-Dimensional%20MoSi2N4:%20An%20Excellent%202-D%20Semiconductor%20for%20Field-Effect%20Transistors&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Nandan,%20Keshari&rft.date=2022-01-01&rft.volume=69&rft.issue=1&rft.spage=406&rft.epage=413&rft.pages=406-413&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2021.3130834&rft_dat=%3Cproquest_RIE%3E2615164775%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2615164775&rft_id=info:pmid/&rft_ieee_id=9646230&rfr_iscdi=true |