Improving Gate Reliability of 6-In E-Mode GaN-Based MIS-HEMTs by Employing Mixed Oxygen and Fluorine Plasma Treatment
Robust and reliable gate scheme is crucial in developing the enhancement-mode (E-mode) AlGaN/GaN metal-insulator-semiconductor (MIS)-high electron mobility transistors (HEMTs). This work reports on a method of mixed oxygen and fluorine plasma pretreatment combined with selected bi-layer gate dielect...
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| Veröffentlicht in: | IEEE transactions on electron devices 2022-01, Vol.69 (1), p.82-87 |
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| container_title | IEEE transactions on electron devices |
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| creator | Sun, Nan Huang, Huolin Sun, Zhonghao Wang, Ronghua Li, Shuxing Tao, Pengcheng Ren, Yongshuo Song, Shukuan Wang, Hongzhou Li, Shaoquan Cheng, Wanxi Liang, Huinan |
| description | Robust and reliable gate scheme is crucial in developing the enhancement-mode (E-mode) AlGaN/GaN metal-insulator-semiconductor (MIS)-high electron mobility transistors (HEMTs). This work reports on a method of mixed oxygen and fluorine plasma pretreatment combined with selected bi-layer gate dielectrics to improve the performances of partially recessed-gate MIS-HEMTs. The fabricated E-mode HEMTs exhibit significantly boosted threshold voltage of 2.5 V and gate breakdown voltage of 26 V, as well as improved device reliability on 6-in wafer under both bias and temperature stresses. Remarkably reduced {V}_{\text {th}} shift is found even at 250 °C high temperature. Furthermore, measurements on gate breakdown lifetime show a ten-year lifetime of the fabricated devices when the gate bias is kept below 13.1 V which demonstrates a promising scheme in fabricating the E-mode HEMT products. |
| doi_str_mv | 10.1109/TED.2021.3131118 |
| format | Article |
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This work reports on a method of mixed oxygen and fluorine plasma pretreatment combined with selected bi-layer gate dielectrics to improve the performances of partially recessed-gate MIS-HEMTs. The fabricated E-mode HEMTs exhibit significantly boosted threshold voltage of 2.5 V and gate breakdown voltage of 26 V, as well as improved device reliability on 6-in wafer under both bias and temperature stresses. Remarkably reduced <inline-formula> <tex-math notation="LaTeX">{V}_{\text {th}} </tex-math></inline-formula> shift is found even at 250 °C high temperature. Furthermore, measurements on gate breakdown lifetime show a ten-year lifetime of the fabricated devices when the gate bias is kept below 13.1 V which demonstrates a promising scheme in fabricating the E-mode HEMT products.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2021.3131118</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Aluminum gallium nitride ; Aluminum gallium nitrides ; Bias ; Bilayers ; Breakdown ; Enhancement-mode (E-mode) high electron mobility transistor (HEMT) ; Fluorine ; Gallium nitrides ; gate reliability ; HEMTs ; High electron mobility transistors ; High temperature ; Leakage currents ; Logic gates ; MIS (semiconductors) ; mixed oxygen and fluorine plasma treatment ; MODFETs ; partially recessed gate ; Plasmas ; Reliability ; Semiconductor devices ; Service life assessment ; Threshold voltage ; Wide band gap semiconductors</subject><ispartof>IEEE transactions on electron devices, 2022-01, Vol.69 (1), p.82-87</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2022</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-5e4d00d1e26e5b29d48a021ccc690b27fcc6b37bc8b69f98ba10d7a7bd6d29203</citedby><cites>FETCH-LOGICAL-c291t-5e4d00d1e26e5b29d48a021ccc690b27fcc6b37bc8b69f98ba10d7a7bd6d29203</cites><orcidid>0000-0003-1073-8538 ; 0000-0002-5361-1492 ; 0000-0002-1025-9644 ; 0000-0003-4721-9459</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9644926$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54737</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9644926$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Sun, Nan</creatorcontrib><creatorcontrib>Huang, Huolin</creatorcontrib><creatorcontrib>Sun, Zhonghao</creatorcontrib><creatorcontrib>Wang, Ronghua</creatorcontrib><creatorcontrib>Li, Shuxing</creatorcontrib><creatorcontrib>Tao, Pengcheng</creatorcontrib><creatorcontrib>Ren, Yongshuo</creatorcontrib><creatorcontrib>Song, Shukuan</creatorcontrib><creatorcontrib>Wang, Hongzhou</creatorcontrib><creatorcontrib>Li, Shaoquan</creatorcontrib><creatorcontrib>Cheng, Wanxi</creatorcontrib><creatorcontrib>Liang, Huinan</creatorcontrib><title>Improving Gate Reliability of 6-In E-Mode GaN-Based MIS-HEMTs by Employing Mixed Oxygen and Fluorine Plasma Treatment</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>Robust and reliable gate scheme is crucial in developing the enhancement-mode (E-mode) AlGaN/GaN metal-insulator-semiconductor (MIS)-high electron mobility transistors (HEMTs). This work reports on a method of mixed oxygen and fluorine plasma pretreatment combined with selected bi-layer gate dielectrics to improve the performances of partially recessed-gate MIS-HEMTs. The fabricated E-mode HEMTs exhibit significantly boosted threshold voltage of 2.5 V and gate breakdown voltage of 26 V, as well as improved device reliability on 6-in wafer under both bias and temperature stresses. Remarkably reduced <inline-formula> <tex-math notation="LaTeX">{V}_{\text {th}} </tex-math></inline-formula> shift is found even at 250 °C high temperature. Furthermore, measurements on gate breakdown lifetime show a ten-year lifetime of the fabricated devices when the gate bias is kept below 13.1 V which demonstrates a promising scheme in fabricating the E-mode HEMT products.</description><subject>Aluminum gallium nitride</subject><subject>Aluminum gallium nitrides</subject><subject>Bias</subject><subject>Bilayers</subject><subject>Breakdown</subject><subject>Enhancement-mode (E-mode) high electron mobility transistor (HEMT)</subject><subject>Fluorine</subject><subject>Gallium nitrides</subject><subject>gate reliability</subject><subject>HEMTs</subject><subject>High electron mobility transistors</subject><subject>High temperature</subject><subject>Leakage currents</subject><subject>Logic gates</subject><subject>MIS (semiconductors)</subject><subject>mixed oxygen and fluorine plasma treatment</subject><subject>MODFETs</subject><subject>partially recessed gate</subject><subject>Plasmas</subject><subject>Reliability</subject><subject>Semiconductor devices</subject><subject>Service life assessment</subject><subject>Threshold voltage</subject><subject>Wide band gap semiconductors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kM1PwzAMxSMEEmNwR-ISiXNGkrZpc4TRbZU2hqCcq6Rxp079GE2H1v-ejE2cbMvvPcs_hO4ZnTBG5VMav0445WziMY8xFl2gEQuCkEjhi0s0opRFRHqRd41urN26Ufg-H6F9Uu-69qdsNniuesAfUJVKl1XZD7gtsCBJg2Oyag24_Rt5URYMXiWfZBGvUov1gON6V7XDMWBVHtxyfRg20GDVGDyr9m1XNoDfK2VrhdMOVF9D09-iq0JVFu7OdYy-ZnE6XZDlep5Mn5ck55L1JADfUGoYcAGB5tL4kXIv5nkuJNU8LFyjvVDnkRaykJFWjJpQhdoIwyWn3hg9nnLdj997sH22bfdd405mXLDAMQj-VPSkyrvW2g6KbNeVteqGjNHsCDdzcLMj3OwM11keTpYSAP7ljrUvufB-AWLgdDU</recordid><startdate>202201</startdate><enddate>202201</enddate><creator>Sun, Nan</creator><creator>Huang, Huolin</creator><creator>Sun, Zhonghao</creator><creator>Wang, Ronghua</creator><creator>Li, Shuxing</creator><creator>Tao, Pengcheng</creator><creator>Ren, Yongshuo</creator><creator>Song, Shukuan</creator><creator>Wang, Hongzhou</creator><creator>Li, Shaoquan</creator><creator>Cheng, Wanxi</creator><creator>Liang, Huinan</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-1073-8538</orcidid><orcidid>https://orcid.org/0000-0002-5361-1492</orcidid><orcidid>https://orcid.org/0000-0002-1025-9644</orcidid><orcidid>https://orcid.org/0000-0003-4721-9459</orcidid></search><sort><creationdate>202201</creationdate><title>Improving Gate Reliability of 6-In E-Mode GaN-Based MIS-HEMTs by Employing Mixed Oxygen and Fluorine Plasma Treatment</title><author>Sun, Nan ; Huang, Huolin ; Sun, Zhonghao ; Wang, Ronghua ; Li, Shuxing ; Tao, Pengcheng ; Ren, Yongshuo ; Song, Shukuan ; Wang, Hongzhou ; Li, Shaoquan ; Cheng, Wanxi ; Liang, Huinan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-5e4d00d1e26e5b29d48a021ccc690b27fcc6b37bc8b69f98ba10d7a7bd6d29203</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Aluminum gallium nitride</topic><topic>Aluminum gallium nitrides</topic><topic>Bias</topic><topic>Bilayers</topic><topic>Breakdown</topic><topic>Enhancement-mode (E-mode) high electron mobility transistor (HEMT)</topic><topic>Fluorine</topic><topic>Gallium nitrides</topic><topic>gate reliability</topic><topic>HEMTs</topic><topic>High electron mobility transistors</topic><topic>High temperature</topic><topic>Leakage currents</topic><topic>Logic gates</topic><topic>MIS (semiconductors)</topic><topic>mixed oxygen and fluorine plasma treatment</topic><topic>MODFETs</topic><topic>partially recessed gate</topic><topic>Plasmas</topic><topic>Reliability</topic><topic>Semiconductor devices</topic><topic>Service life assessment</topic><topic>Threshold voltage</topic><topic>Wide band gap semiconductors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sun, Nan</creatorcontrib><creatorcontrib>Huang, Huolin</creatorcontrib><creatorcontrib>Sun, Zhonghao</creatorcontrib><creatorcontrib>Wang, Ronghua</creatorcontrib><creatorcontrib>Li, Shuxing</creatorcontrib><creatorcontrib>Tao, Pengcheng</creatorcontrib><creatorcontrib>Ren, Yongshuo</creatorcontrib><creatorcontrib>Song, Shukuan</creatorcontrib><creatorcontrib>Wang, Hongzhou</creatorcontrib><creatorcontrib>Li, Shaoquan</creatorcontrib><creatorcontrib>Cheng, Wanxi</creatorcontrib><creatorcontrib>Liang, Huinan</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sun, Nan</au><au>Huang, Huolin</au><au>Sun, Zhonghao</au><au>Wang, Ronghua</au><au>Li, Shuxing</au><au>Tao, Pengcheng</au><au>Ren, Yongshuo</au><au>Song, Shukuan</au><au>Wang, Hongzhou</au><au>Li, Shaoquan</au><au>Cheng, Wanxi</au><au>Liang, Huinan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improving Gate Reliability of 6-In E-Mode GaN-Based MIS-HEMTs by Employing Mixed Oxygen and Fluorine Plasma Treatment</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2022-01</date><risdate>2022</risdate><volume>69</volume><issue>1</issue><spage>82</spage><epage>87</epage><pages>82-87</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>Robust and reliable gate scheme is crucial in developing the enhancement-mode (E-mode) AlGaN/GaN metal-insulator-semiconductor (MIS)-high electron mobility transistors (HEMTs). This work reports on a method of mixed oxygen and fluorine plasma pretreatment combined with selected bi-layer gate dielectrics to improve the performances of partially recessed-gate MIS-HEMTs. The fabricated E-mode HEMTs exhibit significantly boosted threshold voltage of 2.5 V and gate breakdown voltage of 26 V, as well as improved device reliability on 6-in wafer under both bias and temperature stresses. Remarkably reduced <inline-formula> <tex-math notation="LaTeX">{V}_{\text {th}} </tex-math></inline-formula> shift is found even at 250 °C high temperature. Furthermore, measurements on gate breakdown lifetime show a ten-year lifetime of the fabricated devices when the gate bias is kept below 13.1 V which demonstrates a promising scheme in fabricating the E-mode HEMT products.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2021.3131118</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0003-1073-8538</orcidid><orcidid>https://orcid.org/0000-0002-5361-1492</orcidid><orcidid>https://orcid.org/0000-0002-1025-9644</orcidid><orcidid>https://orcid.org/0000-0003-4721-9459</orcidid></addata></record> |
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| subjects | Aluminum gallium nitride Aluminum gallium nitrides Bias Bilayers Breakdown Enhancement-mode (E-mode) high electron mobility transistor (HEMT) Fluorine Gallium nitrides gate reliability HEMTs High electron mobility transistors High temperature Leakage currents Logic gates MIS (semiconductors) mixed oxygen and fluorine plasma treatment MODFETs partially recessed gate Plasmas Reliability Semiconductor devices Service life assessment Threshold voltage Wide band gap semiconductors |
| title | Improving Gate Reliability of 6-In E-Mode GaN-Based MIS-HEMTs by Employing Mixed Oxygen and Fluorine Plasma Treatment |
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