Effect of Electron-Beam Irradiation on the Cathodoluminescence of a ZnO Nanorod Array

The effect of low-energy electron-beam irradiation on the cathodoluminescence of ZnO nanorods is studied. The nanorods are grown by gas-phase synthesis on oxidized silicon substrates at a temperature of about 550°C. It is shown that at the initial stage of irradiation the luminescence intensity incr...

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Veröffentlicht in:Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2021-11, Vol.15 (6), p.1208-1211
Hauptverfasser: Yakimov, E. B., Yakimov, E. E., Redkin, A. N.
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Yakimov, E. E.
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description The effect of low-energy electron-beam irradiation on the cathodoluminescence of ZnO nanorods is studied. The nanorods are grown by gas-phase synthesis on oxidized silicon substrates at a temperature of about 550°C. It is shown that at the initial stage of irradiation the luminescence intensity increases and the rate of this process depends on the electron-beam current. Apparently, this is associated with chemical reactions on the sample surface stimulated by the electron beam. Annealing at 500°C leads to suppression of this effect. Thus, this effect cannot be explained only by the formation of a carbon-containing film upon irradiation. At high irradiation doses luminescence quenching is observed. The quenching rates are different for the initial and annealed samples. An “after-effect” is found. This manifests itself in a decrease in the luminescence intensity even after the beam is turned off.
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subjects Annealing
Cathodoluminescence
Chemical reactions
Chemistry and Materials Science
Electron beams
Electron irradiation
Luminescence
Luminescence quenching
Materials Science
Nanorods
Quenching
Silicon substrates
Surfaces and Interfaces
Thin Films
Zinc oxide
title Effect of Electron-Beam Irradiation on the Cathodoluminescence of a ZnO Nanorod Array
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