Theoretical Studies of Nanowire Ion-Sensitive Field Effect Transistor

The operation principle of a semiconductor nanowire (NW) ion-sensitive field-effect transistor (ISFET), denoted for pH sensing, is studied within the framework of this work. The physical processes in the system are mathematically modelled and presented in details. The dependences of the NW ISFET cur...

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Veröffentlicht in:	Journal of contemporary physics 2021-10, Vol.56 (4), p.324-331
Hauptverfasser:	Yesayan, A., Petrosyan, S., Papiyan, A., Sallese, J.-M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Field effect transistors Nanowires Parameter sensitivity Particle and Nuclear Physics Physical properties Physics Physics and Astronomy Qualitative analysis Semiconductor devices Thickness Transistors
Online-Zugang:	Volltext
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