SiC p+n Junction Diodes Toward Beam Monitor Applications

We report on silicon carbide (SiC) p-n junction diodes with a high blocking voltage over 3 kV. Although SiC radiation sensors have been developed with a Schottky barrier type due to a simple fabrication process in the early stages, p-n junction structures are advantageous due to lower sensitivity of...

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Veröffentlicht in:	IEEE transactions on nuclear science 2021-12, Vol.68 (12), p.2787-2793
Hauptverfasser:	Kishishita, Tetsuichi, Kosugi, Ryoji, Fujita, Yowichi, Fukao, Yoshinori, Kojima, Kazutoshi, Masumoto, Keiko, Nishiguchi, Hajime, Tanaka, Manobu M., Tanaka, Yasunori
Format:	Artikel
Sprache:	eng
Schlagworte:	Beam monitor Crystal defects Electron transitions Epitaxial growth Fabrication Junction diodes Leakage current Leakage currents minimum ionizing particle (MIP) detectors Muons p-n diode P-n junctions Particle beams Proton accelerators Radiation Radiation detectors Radiation tolerance Schottky diodes semiconductor radiation detectors Sensors Silicon carbide silicon carbide (SiC) Substrates Surface defects
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