Lead Zirconium Titanate (PZT)-Based Gate-All-Around Negative-Capacitance Junctionless Nanowire FET for Distortionless Low-Power Applications

A negative-capacitance (NC)-induced junctionless gate-all-around (GAA) nanowire field-effect transistor (FET) is proposed by deploying the ferroelectric material (FE) lead zirconium titanate (PZT) between the gate electrode and metal, referred to as the NC JLNWFET. The FE material is used as a gate...

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Veröffentlicht in:	Journal of electronic materials 2022, Vol.51 (1), p.196-206
Hauptverfasser:	Singh, Sarabdeep, Singh, Shradhya, Kumar, Naveen, Singh, Navaneet Kumar, Ranjan, Ravi, Anand, Sunny
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitance Characterization and Evaluation of Materials Chemistry and Materials Science Design parameters Digital electronics Dipoles Electronics and Microelectronics Ferroelectric materials Ferroelectricity Field effect transistors Instrumentation Lead zirconate titanates Linearity Materials Science Nanowires Optical and Electronic Materials Original Research Article Power management Semiconductor devices Solid State Physics Zirconium titanates
Online-Zugang:	Volltext
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