Excitation dependent photoluminescence from quantum confined ultrasmall SnS sheets
Black phosphorus analogous tin(II) sulfide (SnS) has recently emerged as an attractive building block for photonic and optoelectronic devices due to its intrinsic anisotropic response. Two-dimensional SnS has shown to exhibit in-plane anisotropy in optical and electrical properties. However, the lim...
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Veröffentlicht in: | Applied physics letters 2021-12, Vol.119 (24) |
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creator | Sarkar, Abdus Salam Kumari, Anita Anchala Nakka, Nagaraju Ray, Rajeev Stratakis, Emmanuel Pal, Suman Kalyan |
description | Black phosphorus analogous tin(II) sulfide (SnS) has recently emerged as an attractive building block for photonic and optoelectronic devices due to its intrinsic anisotropic response. Two-dimensional SnS has shown to exhibit in-plane anisotropy in optical and electrical properties. However, the limitations in growing ultrasmall structures of SnS hinder the experimental exploration of anisotropic behavior in low dimension. Here, we present an elegant approach of synthesizing highly crystalline nanometer-sized SnS sheets. Ultrasmall SnS exhibits two distinct valleys along armchair and zig-zag directions due to in-plane structural anisotropy like bulk SnS. We find that in SnS nanosheets, the bandgaps corresponding to two valleys are increased due to the quantum confinement effect. Moreover, the photoluminescence (PL) from SnS quantum dots (QDs) is excitation energy dependent. Our spectroscopic studies infer that PL of SnS QDs originates from the two non-degenerate valleys. |
doi_str_mv | 10.1063/5.0062372 |
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Two-dimensional SnS has shown to exhibit in-plane anisotropy in optical and electrical properties. However, the limitations in growing ultrasmall structures of SnS hinder the experimental exploration of anisotropic behavior in low dimension. Here, we present an elegant approach of synthesizing highly crystalline nanometer-sized SnS sheets. Ultrasmall SnS exhibits two distinct valleys along armchair and zig-zag directions due to in-plane structural anisotropy like bulk SnS. We find that in SnS nanosheets, the bandgaps corresponding to two valleys are increased due to the quantum confinement effect. Moreover, the photoluminescence (PL) from SnS quantum dots (QDs) is excitation energy dependent. Our spectroscopic studies infer that PL of SnS QDs originates from the two non-degenerate valleys.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0062372</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Anisotropy ; Applied physics ; Electrical properties ; Excitation ; Optical properties ; Optoelectronic devices ; Photoluminescence ; Quantum confinement ; Quantum dots ; Sheets ; Valleys</subject><ispartof>Applied physics letters, 2021-12, Vol.119 (24)</ispartof><rights>Author(s)</rights><rights>2021 Author(s). 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Two-dimensional SnS has shown to exhibit in-plane anisotropy in optical and electrical properties. However, the limitations in growing ultrasmall structures of SnS hinder the experimental exploration of anisotropic behavior in low dimension. Here, we present an elegant approach of synthesizing highly crystalline nanometer-sized SnS sheets. Ultrasmall SnS exhibits two distinct valleys along armchair and zig-zag directions due to in-plane structural anisotropy like bulk SnS. We find that in SnS nanosheets, the bandgaps corresponding to two valleys are increased due to the quantum confinement effect. Moreover, the photoluminescence (PL) from SnS quantum dots (QDs) is excitation energy dependent. Our spectroscopic studies infer that PL of SnS QDs originates from the two non-degenerate valleys.</description><subject>Anisotropy</subject><subject>Applied physics</subject><subject>Electrical properties</subject><subject>Excitation</subject><subject>Optical properties</subject><subject>Optoelectronic devices</subject><subject>Photoluminescence</subject><subject>Quantum confinement</subject><subject>Quantum dots</subject><subject>Sheets</subject><subject>Valleys</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNqdkM1KAzEYRYMoWKsL3yDgSmFq_jNdSqk_UBCsrkOaSeiUmWSaZETf3kgV964-LvdwPzgAXGI0w0jQWz5DSBAqyRGYYCRlRTGuj8EEIUQrMef4FJyltCuRE0on4GX5Ydqscxs8bOxgfWN9hsM25NCNfettMtYbC10MPdyP2uexhyZ4V6oGjl2OOvW66-Dar2HaWpvTOThxukv24udOwdv98nXxWK2eH54Wd6vKUCJz5YiU2DgpHZvXDNeScyE0toJx7hhhgiCiS89l02DppKktFhvHMROM1XZDp-DqsDvEsB9tymoXxujLS0UEmpdVzlChrg-UiSGlaJ0aYtvr-KkwUt_KFFc_ygp7c2DTr5P_we8h_oFqaBz9AhUZeeI</recordid><startdate>20211213</startdate><enddate>20211213</enddate><creator>Sarkar, Abdus Salam</creator><creator>Kumari, Anita</creator><creator>Anchala</creator><creator>Nakka, Nagaraju</creator><creator>Ray, Rajeev</creator><creator>Stratakis, Emmanuel</creator><creator>Pal, Suman Kalyan</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-8893-8076</orcidid><orcidid>https://orcid.org/0000-0003-2498-6217</orcidid><orcidid>https://orcid.org/0000-0002-1908-8618</orcidid></search><sort><creationdate>20211213</creationdate><title>Excitation dependent photoluminescence from quantum confined ultrasmall SnS sheets</title><author>Sarkar, Abdus Salam ; Kumari, Anita ; Anchala ; Nakka, Nagaraju ; Ray, Rajeev ; Stratakis, Emmanuel ; Pal, Suman Kalyan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-f2771cf77f49841875566a1e6455f4246202acf757dd17f7c8e16bf5146448eb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Anisotropy</topic><topic>Applied physics</topic><topic>Electrical properties</topic><topic>Excitation</topic><topic>Optical properties</topic><topic>Optoelectronic devices</topic><topic>Photoluminescence</topic><topic>Quantum confinement</topic><topic>Quantum dots</topic><topic>Sheets</topic><topic>Valleys</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sarkar, Abdus Salam</creatorcontrib><creatorcontrib>Kumari, Anita</creatorcontrib><creatorcontrib>Anchala</creatorcontrib><creatorcontrib>Nakka, Nagaraju</creatorcontrib><creatorcontrib>Ray, Rajeev</creatorcontrib><creatorcontrib>Stratakis, Emmanuel</creatorcontrib><creatorcontrib>Pal, Suman Kalyan</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sarkar, Abdus Salam</au><au>Kumari, Anita</au><au>Anchala</au><au>Nakka, Nagaraju</au><au>Ray, Rajeev</au><au>Stratakis, Emmanuel</au><au>Pal, Suman Kalyan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Excitation dependent photoluminescence from quantum confined ultrasmall SnS sheets</atitle><jtitle>Applied physics letters</jtitle><date>2021-12-13</date><risdate>2021</risdate><volume>119</volume><issue>24</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Black phosphorus analogous tin(II) sulfide (SnS) has recently emerged as an attractive building block for photonic and optoelectronic devices due to its intrinsic anisotropic response. Two-dimensional SnS has shown to exhibit in-plane anisotropy in optical and electrical properties. However, the limitations in growing ultrasmall structures of SnS hinder the experimental exploration of anisotropic behavior in low dimension. Here, we present an elegant approach of synthesizing highly crystalline nanometer-sized SnS sheets. Ultrasmall SnS exhibits two distinct valleys along armchair and zig-zag directions due to in-plane structural anisotropy like bulk SnS. We find that in SnS nanosheets, the bandgaps corresponding to two valleys are increased due to the quantum confinement effect. Moreover, the photoluminescence (PL) from SnS quantum dots (QDs) is excitation energy dependent. 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subjects | Anisotropy Applied physics Electrical properties Excitation Optical properties Optoelectronic devices Photoluminescence Quantum confinement Quantum dots Sheets Valleys |
title | Excitation dependent photoluminescence from quantum confined ultrasmall SnS sheets |
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