Air-stable n-type transistors based on assembled aligned carbon nanotube arrays and their application in complementary metal-oxide-semiconductor electronics
Carbon nanotubes (CNTs) are ideal candidates for beyond-silicon nano-electronics because of their high mobility and low-cost processing. Recently, assembled massively aligned CNTs have emerged as an important platform for semiconductor electronics. However, realizing sophisticated complementary nano...
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| Veröffentlicht in: | Nano research 2022-02, Vol.15 (2), p.864-871 |
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| creator | Li, Zhen Jinkins, Katherine R. Cui, Dingzhou Chen, Mingrui Zhao, Zhiyuan Arnold, Michael S. Zhou, Chongwu |
| description | Carbon nanotubes (CNTs) are ideal candidates for beyond-silicon nano-electronics because of their high mobility and low-cost processing. Recently, assembled massively aligned CNTs have emerged as an important platform for semiconductor electronics. However, realizing sophisticated complementary nano-electronics has been challenging due to the p-type nature of carbon nanotubes in air. Fabrication of n-type behavior field effect transistors (FETs) based on assembled aligned CNT arrays is needed for advanced CNT electronics. Here in this paper, we report a scalable process to make n-type behavior FETs based on assembled aligned CNT arrays. Air-stable and high-performance n-type behavior CNT FETs are achieved with high yield by combining the atomic layer deposition dielectric and metal contact engineering. We also systematically studied the contribution of metal contacts and atomic layer deposition passivation in determining the transistor polarity. Based on these experimental results, we report the successful demonstration of complementary metal-oxide-semiconductor inverters with good performance, which paves the way for realizing the promising future of carbon nanotube nano-electronics. |
| doi_str_mv | 10.1007/s12274-021-3567-9 |
| format | Article |
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Recently, assembled massively aligned CNTs have emerged as an important platform for semiconductor electronics. However, realizing sophisticated complementary nano-electronics has been challenging due to the p-type nature of carbon nanotubes in air. Fabrication of n-type behavior field effect transistors (FETs) based on assembled aligned CNT arrays is needed for advanced CNT electronics. Here in this paper, we report a scalable process to make n-type behavior FETs based on assembled aligned CNT arrays. Air-stable and high-performance n-type behavior CNT FETs are achieved with high yield by combining the atomic layer deposition dielectric and metal contact engineering. We also systematically studied the contribution of metal contacts and atomic layer deposition passivation in determining the transistor polarity. Based on these experimental results, we report the successful demonstration of complementary metal-oxide-semiconductor inverters with good performance, which paves the way for realizing the promising future of carbon nanotube nano-electronics.</description><identifier>ISSN: 1998-0124</identifier><identifier>EISSN: 1998-0000</identifier><identifier>DOI: 10.1007/s12274-021-3567-9</identifier><language>eng</language><publisher>Beijing: Tsinghua University Press</publisher><subject>Arrays ; Atomic layer epitaxy ; Atomic/Molecular Structure and Spectra ; Biomedicine ; Biotechnology ; Carbon ; Carbon nanotubes ; Chemistry and Materials Science ; Condensed Matter Physics ; Electronics ; Fabrication ; Field effect transistors ; Materials Science ; Metal oxide semiconductors ; Metals ; Nanotechnology ; Nanotubes ; Polarity ; Research Article ; Semiconductor devices ; Transistors</subject><ispartof>Nano research, 2022-02, Vol.15 (2), p.864-871</ispartof><rights>Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021</rights><rights>Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-bc92ba1a5b5e41647c4c7cd7b418fa8d50b8460847196108cb34d6e09946adb53</citedby><cites>FETCH-LOGICAL-c316t-bc92ba1a5b5e41647c4c7cd7b418fa8d50b8460847196108cb34d6e09946adb53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s12274-021-3567-9$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s12274-021-3567-9$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,777,781,27905,27906,41469,42538,51300</link.rule.ids></links><search><creatorcontrib>Li, Zhen</creatorcontrib><creatorcontrib>Jinkins, Katherine R.</creatorcontrib><creatorcontrib>Cui, Dingzhou</creatorcontrib><creatorcontrib>Chen, Mingrui</creatorcontrib><creatorcontrib>Zhao, Zhiyuan</creatorcontrib><creatorcontrib>Arnold, Michael S.</creatorcontrib><creatorcontrib>Zhou, Chongwu</creatorcontrib><title>Air-stable n-type transistors based on assembled aligned carbon nanotube arrays and their application in complementary metal-oxide-semiconductor electronics</title><title>Nano research</title><addtitle>Nano Res</addtitle><description>Carbon nanotubes (CNTs) are ideal candidates for beyond-silicon nano-electronics because of their high mobility and low-cost processing. 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n-type transistors based on assembled aligned carbon nanotube arrays and their application in complementary metal-oxide-semiconductor electronics</title><author>Li, Zhen ; Jinkins, Katherine R. ; Cui, Dingzhou ; Chen, Mingrui ; Zhao, Zhiyuan ; Arnold, Michael S. ; Zhou, Chongwu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-bc92ba1a5b5e41647c4c7cd7b418fa8d50b8460847196108cb34d6e09946adb53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Arrays</topic><topic>Atomic layer epitaxy</topic><topic>Atomic/Molecular Structure and Spectra</topic><topic>Biomedicine</topic><topic>Biotechnology</topic><topic>Carbon</topic><topic>Carbon nanotubes</topic><topic>Chemistry and Materials Science</topic><topic>Condensed Matter Physics</topic><topic>Electronics</topic><topic>Fabrication</topic><topic>Field effect transistors</topic><topic>Materials Science</topic><topic>Metal oxide 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Res</stitle><date>2022-02-01</date><risdate>2022</risdate><volume>15</volume><issue>2</issue><spage>864</spage><epage>871</epage><pages>864-871</pages><issn>1998-0124</issn><eissn>1998-0000</eissn><abstract>Carbon nanotubes (CNTs) are ideal candidates for beyond-silicon nano-electronics because of their high mobility and low-cost processing. Recently, assembled massively aligned CNTs have emerged as an important platform for semiconductor electronics. However, realizing sophisticated complementary nano-electronics has been challenging due to the p-type nature of carbon nanotubes in air. Fabrication of n-type behavior field effect transistors (FETs) based on assembled aligned CNT arrays is needed for advanced CNT electronics. Here in this paper, we report a scalable process to make n-type behavior FETs based on assembled aligned CNT arrays. Air-stable and high-performance n-type behavior CNT FETs are achieved with high yield by combining the atomic layer deposition dielectric and metal contact engineering. We also systematically studied the contribution of metal contacts and atomic layer deposition passivation in determining the transistor polarity. Based on these experimental results, we report the successful demonstration of complementary metal-oxide-semiconductor inverters with good performance, which paves the way for realizing the promising future of carbon nanotube nano-electronics.</abstract><cop>Beijing</cop><pub>Tsinghua University Press</pub><doi>10.1007/s12274-021-3567-9</doi><tpages>8</tpages></addata></record> |
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| identifier | ISSN: 1998-0124 |
| ispartof | Nano research, 2022-02, Vol.15 (2), p.864-871 |
| issn | 1998-0124 1998-0000 |
| language | eng |
| recordid | cdi_proquest_journals_2608260830 |
| source | Springer Nature - Complete Springer Journals |
| subjects | Arrays Atomic layer epitaxy Atomic/Molecular Structure and Spectra Biomedicine Biotechnology Carbon Carbon nanotubes Chemistry and Materials Science Condensed Matter Physics Electronics Fabrication Field effect transistors Materials Science Metal oxide semiconductors Metals Nanotechnology Nanotubes Polarity Research Article Semiconductor devices Transistors |
| title | Air-stable n-type transistors based on assembled aligned carbon nanotube arrays and their application in complementary metal-oxide-semiconductor electronics |
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